热工作和环境条件下具有应力释放间隙的半嵌入式硅通孔(TSV)中间层的非线性分析

2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems Pub Date : 2012-04-16 DOI:10.1109/ESIME.2012.6191796

J. Lau, Shang-Tsai Wu, H. Chien

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引用次数: 4

摘要

在本研究中，研究了热工作和环境条件下具有应力释放间隙的半嵌入式TSV中间体的3D集成电路。重点研究了低钾铝/铜焊盘和微焊点的TSV中间变形、非线性应力和蠕变应变的测定。

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Nonlinear analyses of semi-embedded through-silicon via (TSV) interposer with stress relief gap under thermal operating and environmental conditions

In this study, 3D IC integrations with a semi-embedded TSV interposer with stress relief gap under thermal operating and environmental conditions are investigated. Emphasis is placed on the determination of the TSV interposer warpage and the nonlinear stress and creep strain in the Al/Cu-low-k pads and micro solder joints.

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2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems

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