2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)最新文献

Tunable visible emission and white light generation by Ag nanoclusters in Tm3+/Yb3+ doped GeO2-PbO glasses 在Tm3+/Yb3+掺杂的GeO2-PbO玻璃中，Ag纳米团簇可调谐可见光发射和白光产生

2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/SBMicro50945.2021.9585770

Marcos Vinicius de Morais, C. Bordon, D. D. da Silva, L. Kassab

{"title":"Tunable visible emission and white light generation by Ag nanoclusters in Tm3+/Yb3+ doped GeO2-PbO glasses","authors":"Marcos Vinicius de Morais, C. Bordon, D. D. da Silva, L. Kassab","doi":"10.1109/SBMicro50945.2021.9585770","DOIUrl":"https://doi.org/10.1109/SBMicro50945.2021.9585770","url":null,"abstract":"GeO2-PbO glasses demonstrated to be adequate hosts for incorporation of rare-earth ions and nucleation of metallic nanoparticles. However, Ag nanoclusters were not explored in GeO2-PbO glasses. The luminescence of Ag nanoclusters in glasses has several applications such as UV-driven flexible color monitors, mercury-free white light generation under UV pumping, tunable light sources/lasers, and solar cells. The present investigation shows white light generation by Ag nanocluster in Tm3+/Yb3+ doped GeO2-PbO glasses. Moreover, we also demonstrate tunable visible emission provided by Ag nanoclusters. Glasses were produced by melt-quenching technique followed by annealing to reduce internal stress. Different emission colors ranging from the blue to the green-yellowish were obtained for GeO2-PbO glasses doped only with AgNO3, under different excitation wavelengths. Doping GeO2-PbO glasses with AgNO3 and Yb3+/Tm3+ ions resulted in a blue emission for excitation at 405nm, whereas white light generation was observed for excitation with a commercial 365 nm UV lamp. The photoluminescence (PL) was attributed to the combination of emission bands, from Tm3+ ions and Ag nanoclusters. The results reported herein show the potential of GeO2-PbO glasses for white light emitting devices such as light phosphors for UV light driven W-LEDs.","PeriodicalId":318195,"journal":{"name":"2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126791264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Electro-optic 2:1 Reversible MUX based on Ti diffused Lithium Niobate MZI 基于Ti扩散铌酸锂MZI的电光2:1可逆MUX

2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/SBMicro50945.2021.9585758

Shashank Awasthi, S. Metya, A. Majumder

引用次数: 2

Fully Analytical Compact Model for the I-V Characteristics of Resonant Tunneling Diodes 谐振隧道二极管I-V特性的全解析紧凑模型

2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/SBMicro50945.2021.9585749

D. Celino, Adelcio M. de Souza, Caio L. M. P. Plazas, R. Ragi, M. Romero

引用次数: 3

Influence of the InAs coverage on the performance of submonolayer-quantum-dot infrared photodetectors grown with a (2×4) surface reconstruction InAs覆盖对(2×4)表面重建生长的亚单层-量子点红外探测器性能的影响

2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/SBMicro50945.2021.9585765

A. Alzeidan, Tiago F. de Cantalice, K. Vallejo, Paul J. Simmonds, A. Quivy

引用次数: 0

Design of a Gate-All-Around Stacked Nanosheet Differential Amplifier under Different Bias Conditions 不同偏置条件下栅极全能叠加纳米片差分放大器的设计

2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/SBMicro50945.2021.9585744

J. Sousa, W. Perina, J. Martino, P. Agopian

引用次数: 0

Analysis and Optimization of Fine-Pitch Gold Wire Ball Bonding Thermosonic Parameters 细间距金丝球键合热超声参数分析与优化

2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/SBMicro50945.2021.9585736

Arthur Lutckmeier Bohn, Cassiano Silva de Campes, R. D. de Figueiredo, S. Rigo

{"title":"Analysis and Optimization of Fine-Pitch Gold Wire Ball Bonding Thermosonic Parameters","authors":"Arthur Lutckmeier Bohn, Cassiano Silva de Campes, R. D. de Figueiredo, S. Rigo","doi":"10.1109/SBMicro50945.2021.9585736","DOIUrl":"https://doi.org/10.1109/SBMicro50945.2021.9585736","url":null,"abstract":"One of the main characteristics of semiconductors' history is their scale reduction, effectively shortening the distances between I/O electrical pads. Gold wire ball bonding is a standard in semiconductor packaging and the optimization of its parameters is essential. This study employed the use of three key parameters as input and two measurements as output in a 5-level Full Factorial Design of Experiments, later extrapolated to a 9-level mathematical model for detailed analysis. A fitness function was developed to find the best overall results based on the inputs, as the two outputs are proportional but inversely desired (as the shear resistance desirably increases, so increases the bond diameter, undesirably). This function returned bonds with 40.27μm in diameter on a 48 μm wide pad and 15.43 gf in shear resistance from a 20.32 μm (0.8 mils) wire, both desirable. Potassium Hidroxide etching was later performed to validate the physical implications from the method's best results, where all the desired intermetallic characteristics were found.","PeriodicalId":318195,"journal":{"name":"2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124049896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The influence of crosslinker concentration on PVA insulation characteristics 交联剂浓度对PVA绝缘特性的影响

2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/SBMicro50945.2021.9585759

Taiane C. Neves, Taiza A. Neves, H. Boudinov

引用次数: 0

The conduction mechanisms analysis of AlGaN/GaN MOSHEMTs with different source/drain electrode configurations 不同源极/漏极配置下AlGaN/GaN MOSHEMTs的导电机理分析

2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/SBMicro50945.2021.9585769

B. Canales, G. J. Carmo, P. Agopian

引用次数: 6

Anti-reflection glass coverslips for indoor MOS photovoltaic cells 用于室内MOS光伏电池的防反射玻璃盖

2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/SBMicro50945.2021.9585766

G. O. Louzada, M. Watanabe, R. Rangel, S. G. dos Santos Filho

{"title":"Anti-reflection glass coverslips for indoor MOS photovoltaic cells","authors":"G. O. Louzada, M. Watanabe, R. Rangel, S. G. dos Santos Filho","doi":"10.1109/SBMicro50945.2021.9585766","DOIUrl":"https://doi.org/10.1109/SBMicro50945.2021.9585766","url":null,"abstract":"This article discusses the use of glass coverslips with thickness in the range of 70 to 108 µm as anti-reflection layers in order to increase the efficiency of MOS photovoltaic cells with Al/SiO2(1.7 nm)/Si-P structure fabricated on 10 Ω.cm substrates using rapid thermal oxidation (RTO) at 850°C. Different thicknesses of glass coverslips were obtained through controlled chemical thinning using BOE (Buffered Oxide Etch; 1HF: 6NH4F) with corrosion time varying from 2 to 12 h followed by a surface chemical treatment with an ammonia-based solution (4H2O: 1H2O2:1NH4OH). Current density x voltage curves (JxV), using indoor light illumination of 11.7 mW/cm2 at 25oC on the sample surface, were extracted for different thicknesses of the processed glass coverslips and the main electrical parameters were obtained for the MOS photovoltaic cells such as the short circuit current (Jsc), the open circuit voltage (Voc) and energy conversion efficiency (η). As a result, a significant increase of the indoor energy conversion efficiency was obtained for the thickness of the glass coverslip of ~98 µm compared to those without chemical thinning (~130 µm thick), this is to say, η ≈ 4.8 – 5.2% against η ≈ 3.3%, respectively.","PeriodicalId":318195,"journal":{"name":"2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125472398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Second Generation of the Layout Styles for MOSFETs to Further Boosting the Electrical Performance of Analog MOSFETs and CMOS ICs 第二代mosfet布局风格，进一步提升模拟mosfet和CMOS ic的电学性能

2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/SBMicro50945.2021.9585737

Egon Henrique Salerno, G. A. da Silva, S. Gimenez

{"title":"The Second Generation of the Layout Styles for MOSFETs to Further Boosting the Electrical Performance of Analog MOSFETs and CMOS ICs","authors":"Egon Henrique Salerno, G. A. da Silva, S. Gimenez","doi":"10.1109/SBMicro50945.2021.9585737","DOIUrl":"https://doi.org/10.1109/SBMicro50945.2021.9585737","url":null,"abstract":"This article describes, for the first time, the study of electrical behavior of the first element belonging to the family of Second Generation of layout styles for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), entitled Half-Diamond. It was conceived in order to further boosting the electrical performance of the analog MOSFETs in relation to the one found in Diamond MOSFETs (hexagonal gate shape). This innovative layout style has by objective further enhance the Longitudinal Corner Effect (LCE) and mainly the Parallel Connections of MOSFETs with Different Channel Lengths Effect (PAMDLE) by the means of further reducing of the effective channel lengths of Diamond MOSFETs in relation to those measured in the conventional (rectangular gate geometry) ones (RMs). The main results found by the three-dimensional numerical simulations indicates that the Half-Diamond MOSFET (HDM) is able to provide a saturation drain current 13% higher than the one observed in the RM counterpart. Furthermore, the electrical behaviors of LCE, PAMDLE and DEPAMBRE in HDM are analyzed in detail by observing the electrical behavior of the electrostatic potentials, longitudinal electric fields and drain current densities.","PeriodicalId":318195,"journal":{"name":"2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131634636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1