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2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)最新文献

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Gate Delay Variability due to Random Telegraph Noise 随机电报噪声引起的门延迟变异性
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/SBMicro50945.2021.9585760
Rodolfo G. Barbosa, T. H. Both, G. Wirth
{"title":"Gate Delay Variability due to Random Telegraph Noise","authors":"Rodolfo G. Barbosa, T. H. Both, G. Wirth","doi":"10.1109/SBMicro50945.2021.9585760","DOIUrl":"https://doi.org/10.1109/SBMicro50945.2021.9585760","url":null,"abstract":"Stochastic timing variations are a major concern in nanometric CMOS logic gates. Addressing the time-zero fluctuations due to variability of physical dimensions and doping profiles, which remain static over time, as well as the time-dependent fluctuations, such as Random Telegraph Noise (RTN), is, therefore, imperative for proper circuit design. In this work, we study how the observation window impacts gate delay variability due to RTN, illustrating how it affects the observed variance of the gate delay taken over time. Our study indicates that the relation between propagation delay and trap time constant is a proper measure (benchmark) to evaluate the time constant of the fastest trap that induces time dependent variability. And that observation duration (measurement duration) is a proper measure (benchmark) to evaluate the time constant of the slowest trap that induces time dependent variability.","PeriodicalId":318195,"journal":{"name":"2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131172295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical Characterization of InAs/InGaP Intermediate Band Solar Cells InAs/InGaP中间带太阳能电池的光学特性
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/SBMicro50945.2021.9585773
Clarissa de Paula Dias, E. Weiner, R. Kawabata, R. Jakomin, P. L. Souza, M. Pires
{"title":"Optical Characterization of InAs/InGaP Intermediate Band Solar Cells","authors":"Clarissa de Paula Dias, E. Weiner, R. Kawabata, R. Jakomin, P. L. Souza, M. Pires","doi":"10.1109/SBMicro50945.2021.9585773","DOIUrl":"https://doi.org/10.1109/SBMicro50945.2021.9585773","url":null,"abstract":"Intermediate Band Solar Cells (IBSCs), are among the candidates for next-generation photovoltaic devices with improved efficiency, replacing the existing single junction solar cells. In this work, intermediate bands have been formed growing InAs quantum dots by MOVPE (Metal Organic Vapour Phase Epitaxy). The optical properties of the InAs quantum dots (QDs) have been investigated by photoluminescence (PL), specifically to obtain information about the optical transitions of the QD structure. The results of this work indicate a path for fabricating good optical quality QD structures and higher efficiency next generation IBSCs.","PeriodicalId":318195,"journal":{"name":"2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132498060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
[SBMicro 2021 Front cover] [SBMicro 2021封面]
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/sbmicro50945.2021.9585772
{"title":"[SBMicro 2021 Front cover]","authors":"","doi":"10.1109/sbmicro50945.2021.9585772","DOIUrl":"https://doi.org/10.1109/sbmicro50945.2021.9585772","url":null,"abstract":"","PeriodicalId":318195,"journal":{"name":"2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132129575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New composite material based on micrographite particles in glassy matrices for applications in piezoresistive sensors 基于玻璃基微石墨颗粒的新型复合材料在压阻传感器中的应用
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/sbmicro50945.2021.9705220
O. Correa, Pompeu Pereira de Abreu Filho, Mara Adriana Canesqui, S. Moshkalev, J. Swart
{"title":"New composite material based on micrographite particles in glassy matrices for applications in piezoresistive sensors","authors":"O. Correa, Pompeu Pereira de Abreu Filho, Mara Adriana Canesqui, S. Moshkalev, J. Swart","doi":"10.1109/sbmicro50945.2021.9705220","DOIUrl":"https://doi.org/10.1109/sbmicro50945.2021.9705220","url":null,"abstract":"New composite piezoresistive material has been developed based on micrographite particles immersed in glassy matrix with composition containing several Pb-free oxides: Bi2O3, B2O3, SiO2, Al2O3 and ZnO. This composition allowed to obtain reduced sintering temperature for the composite material thus avoiding loss of graphite during thermal processing in air. Methodology for producing piezoresistive films from pastes with micrographite particles includes the use of a sodium carboxymethyl cellulose (NaCMC) aqueous solutions during preparation of pastes. It was verified that NaCMC plays a decisive role in interactions between graphite particles and glassy matrix, providing good wettability of glassy matrix particles and homogeneous distribution of micrographite particles in the pastes. The films stability and piezoresistive characteristics of the films were verified in the mechanical tension experiments.","PeriodicalId":318195,"journal":{"name":"2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121773318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Influence of the Quantum Effect on the GAA Nanosheet NMOS from 200°C down to -100°C 200°C至-100°C时量子效应对GAA纳米片NMOS的影响
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/SBMicro50945.2021.9585738
João V. C. Leal, P. Agopian, J. Martino
{"title":"Influence of the Quantum Effect on the GAA Nanosheet NMOS from 200°C down to -100°C","authors":"João V. C. Leal, P. Agopian, J. Martino","doi":"10.1109/SBMicro50945.2021.9585738","DOIUrl":"https://doi.org/10.1109/SBMicro50945.2021.9585738","url":null,"abstract":"The quantum effect on the Gate-All-Around Nanosheet (GAA NS) NMOS devices are studied in this paper from 200°C down to -100°C. The experimental results for different channel lengths (down to 28 nm) are used from 200°C to room temperature and the behavior down to -100°C is extrapolated using calibrated TCAD simulation. The quantum confinement is present in all devices, but only for the h = 5nm case its contribution for the threshold voltage increase is more relevant. This increment is constant with the temperature, but it becomes proportionally more important for higher temperatures due to the VT decrease in such conditions. The subthreshold swing is not affected by the quantum model and its value is close to (kT/q)ln(10) in all cases, with the best results obtained for the lowest device height.","PeriodicalId":318195,"journal":{"name":"2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"09 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127206297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Revealing the Influence of Annealing Treatment on the Performance of Non-Fullerene Organic Photovoltaics 揭示退火处理对非富勒烯有机光伏性能的影响
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/SBMicro50945.2021.9585750
E. Moustafa, J. Pallarès, L. Marsal
{"title":"Revealing the Influence of Annealing Treatment on the Performance of Non-Fullerene Organic Photovoltaics","authors":"E. Moustafa, J. Pallarès, L. Marsal","doi":"10.1109/SBMicro50945.2021.9585750","DOIUrl":"https://doi.org/10.1109/SBMicro50945.2021.9585750","url":null,"abstract":"In this piece of work, inverted organic solar cells (OSCs) based on PM6 (donor): Y7 (non-fullerene acceptor-NF) were fabricated with the structure of ITO/ZnO/PM6:Y7(NF)/V2O5/Ag. The influence of the PM6:Y7 active layer thickness and annealing on the performance of the fabricated devices were investigated. The highest performance was obtained for the 100 nm PM6:Y7 film thickness-based NF-OSCs upon the thermal annealing treatment at 120 ℃ for 10 min achieving a power conversion efficiency of 11.90%. The obtained results exhibited that the power conversion efficiency and the generated current density for the optimized NF-OSCs were improved by 30 % and 19 %, respectively for the thermally annealed devices more than the pristine cells.","PeriodicalId":318195,"journal":{"name":"2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116649604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis of Capacitances in Asymmetric Self-Cascode SOI nMOSFETs 非对称自级联SOI nmosfet的电容分析
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/SBMicro50945.2021.9585730
C. Alves, Li�gia Martins d'Oliveira, M. de Souza
{"title":"Analysis of Capacitances in Asymmetric Self-Cascode SOI nMOSFETs","authors":"C. Alves, Li�gia Martins d'Oliveira, M. de Souza","doi":"10.1109/SBMicro50945.2021.9585730","DOIUrl":"https://doi.org/10.1109/SBMicro50945.2021.9585730","url":null,"abstract":"This work presents a study of the capacitance of asymmetric self-cascode silicon-on-insulator (ASC SOI) MOSFETs with similar gate areas and different gate lengths. Experimental results of total gate capacitance of different ASC are presented and complemented with the results of two-dimensional simulations. The transcapacitances are explored through two-dimensional simulations. Results show that different channel lengths of the composite transistors have more influence in the depletion region of the capacitance curves for low VDS. The gate-source and gate-drain capacitances show opposite trends with the change in the lengths of source and drain transistors, despite of the VDS applied.","PeriodicalId":318195,"journal":{"name":"2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115116442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simulation and Modelling of Resonant Tunneling Diode Peak Voltage Dependence on Spacer Layers 谐振隧道二极管峰值电压随间隔层变化的仿真与建模
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/SBMicro50945.2021.9585751
Saif Alomari, J. Figueiredo
{"title":"Simulation and Modelling of Resonant Tunneling Diode Peak Voltage Dependence on Spacer Layers","authors":"Saif Alomari, J. Figueiredo","doi":"10.1109/SBMicro50945.2021.9585751","DOIUrl":"https://doi.org/10.1109/SBMicro50945.2021.9585751","url":null,"abstract":"A set of designed experiments are used to study the effects of the resonant tunneling diode (RTD) spacer layers parameters on the peak output voltage. The results are mathematically modelled based on physical interpretations. The built-in potential resulting from doping gradients between the emitter and collector along with the location of the Fermi-energy and the conductance of the collector are found to play a key role in the location of the peak. The thicknesses of both the emitter and collector regions influence the peak voltage up to a particular characteristic length which is found to be linked to the Thomas-Fermi screening length in the emitter and the Debye length in the collector.","PeriodicalId":318195,"journal":{"name":"2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115722705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
NBTI Dependence on Temperature in Junctionless Nanowire Transistors 无结纳米线晶体管中NBTI对温度的依赖性
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/SBMicro50945.2021.9585764
N. G. Junior, R. Trevisoli, R. Doria
{"title":"NBTI Dependence on Temperature in Junctionless Nanowire Transistors","authors":"N. G. Junior, R. Trevisoli, R. Doria","doi":"10.1109/SBMicro50945.2021.9585764","DOIUrl":"https://doi.org/10.1109/SBMicro50945.2021.9585764","url":null,"abstract":"This paper discusses the nature of degradation by NBTI effect in pMOS junctionless devices when varying the temperature. The results were obtained through simulations validated to experimental data. Devices with different dimensions and doping, have been subjected to a temperature range that varies between 270 and 380 K. The simulations were performed for different values of VGT and as a result it is possible to observe that when increasing temperature up to 340 K, the threshold voltage variation due to NBTI is also increased. However, for larger temperatures the NBTI effect seems to stabilize or even reduce.","PeriodicalId":318195,"journal":{"name":"2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122643120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Multilayer graphene-silicone nanocomposite films for use in thermal interfaces 用于热界面的多层石墨烯-硅纳米复合薄膜
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2021-08-23 DOI: 10.1109/SBMicro50945.2021.9585763
Larissa G. Mendes, S. Nista, R. Savu, L. Mei, S. Moshkalev
{"title":"Multilayer graphene-silicone nanocomposite films for use in thermal interfaces","authors":"Larissa G. Mendes, S. Nista, R. Savu, L. Mei, S. Moshkalev","doi":"10.1109/SBMicro50945.2021.9585763","DOIUrl":"https://doi.org/10.1109/SBMicro50945.2021.9585763","url":null,"abstract":"Flexible graphene-based composite films have gained high importance as thermal interface materials for applications in electro-electronic devices, in order to solve the problem of overheating and consequent degradation of the products.In this research, the results of characterization of the thermal, electrical and mechanical performance of silicone-based nanocomposite films with varying percentages of graphene were presented. Resistivity results were shown to be below 20.6 Ω.cm in the sample with 20% graphene. The mechanical performance of the films showed excellent results, with a Modulus of Elasticity of 19.2 MPa in the tensile test for the best tested formulations. Finally, the thermal analysis performed for a commercial light emitting diodes (LED devices), measuring the junction temperature (Tj) at the interface between the diode base and the cooling platform, showed temperatures around 100ºC at full LED power, i.e., within the range recommended by the device supplier, with the possibility of further improvement. These results indicate that the material developed from graphite/silicone polymer is a promising flexible conductive material for numerous applications in electronics, heat sinks, thermal interfaces and others.","PeriodicalId":318195,"journal":{"name":"2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127697101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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