Optical Characterization of InAs/InGaP Intermediate Band Solar Cells

Abstract

Intermediate Band Solar Cells (IBSCs), are among the candidates for next-generation photovoltaic devices with improved efficiency, replacing the existing single junction solar cells. In this work, intermediate bands have been formed growing InAs quantum dots by MOVPE (Metal Organic Vapour Phase Epitaxy). The optical properties of the InAs quantum dots (QDs) have been investigated by photoluminescence (PL), specifically to obtain information about the optical transitions of the QD structure. The results of this work indicate a path for fabricating good optical quality QD structures and higher efficiency next generation IBSCs.