Gate Delay Variability due to Random Telegraph Noise

Rodolfo G. Barbosa, T. H. Both, G. Wirth
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Abstract

Stochastic timing variations are a major concern in nanometric CMOS logic gates. Addressing the time-zero fluctuations due to variability of physical dimensions and doping profiles, which remain static over time, as well as the time-dependent fluctuations, such as Random Telegraph Noise (RTN), is, therefore, imperative for proper circuit design. In this work, we study how the observation window impacts gate delay variability due to RTN, illustrating how it affects the observed variance of the gate delay taken over time. Our study indicates that the relation between propagation delay and trap time constant is a proper measure (benchmark) to evaluate the time constant of the fastest trap that induces time dependent variability. And that observation duration (measurement duration) is a proper measure (benchmark) to evaluate the time constant of the slowest trap that induces time dependent variability.
随机电报噪声引起的门延迟变异性
随机时序变化是纳米CMOS逻辑门的主要问题。因此,解决由于物理尺寸和掺杂谱的变化(随时间保持静态)以及随时间变化的波动(如随机电报噪声(RTN))引起的时间零波动,对于适当的电路设计至关重要。在这项工作中,我们研究了观察窗口如何影响由于RTN引起的门延迟变异性,说明了它如何影响门延迟随时间的观察方差。我们的研究表明,传播延迟与陷阱时间常数的关系是评估引起时间相关变化的最快陷阱的时间常数的适当度量(基准)。观测持续时间(测量持续时间)是评估引起时间依赖性变率的最慢陷阱的时间常数的适当度量(基准)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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