Influence of the InAs coverage on the performance of submonolayer-quantum-dot infrared photodetectors grown with a (2×4) surface reconstruction

Abstract

Two infrared photodetectors based on submonolayer quantum dots, having a different InAs coverage of 35% and 50%, were grown, processed and tested. The detector with the larger coverage yielded a specific detectivity of 1.13×1011 cm Hz1/2 W-1 at 12K, which is among the highest values reported in the literature for that kind of device.