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2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)最新文献

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An Improved Composite JTE Termination Technique for Ultrahigh Voltage 4H-SiC Power Devices 超高压4H-SiC功率器件中改进的复合JTE端接技术
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019794
R. Hu, Xiaochuan Deng, Xiaojie Xu, Xuan Li, Jun-tao Li, Zhiqiang Li, Y. Zhang, Bo Zhang
{"title":"An Improved Composite JTE Termination Technique for Ultrahigh Voltage 4H-SiC Power Devices","authors":"R. Hu, Xiaochuan Deng, Xiaojie Xu, Xuan Li, Jun-tao Li, Zhiqiang Li, Y. Zhang, Bo Zhang","doi":"10.1109/SSLChinaIFWS49075.2019.9019794","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019794","url":null,"abstract":"This paper presents a novel and efficient multiple-step-modulated JTE (MSM-JTE) termination technique for ultrahigh voltage (>10 kV) silicon carbide (SiC) devices, to extend the ultrahigh voltage JTE dose window and increase the breakdown voltage. MSM-JTE takes advantage of ring assisted JTE, etched JTE and space modulated JTE, to relief local electric field concentration and form a gradual decrease of effective charges overall. This is similar to lateral variation doping (VLD) technique which is widely used in silicon. A practical fabrication processes is also described. Compared with conventional TZ-JTE, MSM-JTE requires only one extra etching process and is insensitive to doping dose and energy of ion implantation. The MSM-JTE is applied to 15 kV PiN rectifier and simulated by Silvaco TCAD. The simulation result shows MSM-JTE could reach a nearly ideal maximum efficiency of 99 % and keep an efficiency of 95 % in a doping interval of 7×1012 cm−2. Tolerance to etching depth uncertainties is also high enough for process reliability and repeatability.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129294877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Optical and Thermal Designs of LED Matrix Module used in Automotive Headlamps 用于汽车前照灯的LED矩阵模块的光学和热设计
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019757
Wei Chen, Jiajie Fan, Gaojin Qi, Chengzhong Sun, Weiqiao Yang, Su-lan Cao
{"title":"Optical and Thermal Designs of LED Matrix Module used in Automotive Headlamps","authors":"Wei Chen, Jiajie Fan, Gaojin Qi, Chengzhong Sun, Weiqiao Yang, Su-lan Cao","doi":"10.1109/SSLChinaIFWS49075.2019.9019757","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019757","url":null,"abstract":"With higher efficiency, brightness and reliability than traditional light sources, LED has been widely applied in automotive headlamps. The smaller volume and higher power density of a LED package drive the design of automotive headlamps with LED matrix model, such as adaptive driving beam (ADB) system. This paper proposed a matrix automotive headlamp module with rectangle lens array to balance the contradiction between improving the visual condition of driver in the nighttime driving and reducing the impact of glare on others from the opposite direction. Firstly, according to the requirements on light distribution provided by the GB 25991 regulation, the optimized optical design, including configuration of LEDs and structure of optical system, was developed based on the optical simulations. Secondly, the thermal management of the module was conducted by using the fluid finite element simulation through considering both the natural and forced convections. The results show that: 1) a LED matrix with specially designed rectangle lens array that contains different size of lenses can produce the independent and nonoverlapping rectangular light spots as required; 2) the heatsink with optimal designed pin fins can provide more effective thermal dissipation in convection.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115391577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Failure Analysis of Glass Transition Temperature of LED Insulation Layer LED绝缘层玻璃化转变温度失效分析
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019815
Yibin Wang, Fang Fang, Jing Wu, Kaixuan Lin, Tingting Xu, W.-J. Liang, Luqiao Yin
{"title":"Failure Analysis of Glass Transition Temperature of LED Insulation Layer","authors":"Yibin Wang, Fang Fang, Jing Wu, Kaixuan Lin, Tingting Xu, W.-J. Liang, Luqiao Yin","doi":"10.1109/SSLChinaIFWS49075.2019.9019815","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019815","url":null,"abstract":"With the development of light-emitting diodes (LEDs) technology, the number of LEDs chips in high-power LEDs devices is increasing, and the use of LEDs continues to expand, the reliability has become the key to its widespread use. When the LEDs device fails, the failure analysis of the device can effectively derive the mechanism and condition of the device failure, which has a significant effect on enhancing the reliability of the device. In this paper, by analyzing the instantaneous voltage curve and thermal of the failed device, it can be concluded that when the operating current of the LEDs device is large, due to the poor thermal conductivity of the insulating layer, the insulating layer of the device is in the vitrification transition temperature for a long time. The shape of the insulating layer is easily changed or even burned to cause delamination, resulting in LEDs failure.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"12 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124639706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on Preparation and Application of Nano-copper Powder for Power Semiconductor Device Packaging 功率半导体器件封装用纳米铜粉的制备及应用研究
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019790
Xu Pan, Ligen Wang, Fengcai Qi, Youzhi Zhou, Jiacheng Zhou, Jingguo Zhang, Zhaohui Zhao, Minghui Liang, H. Ye, Q. Hu, Hui-jun He, Limin Wang
{"title":"Study on Preparation and Application of Nano-copper Powder for Power Semiconductor Device Packaging","authors":"Xu Pan, Ligen Wang, Fengcai Qi, Youzhi Zhou, Jiacheng Zhou, Jingguo Zhang, Zhaohui Zhao, Minghui Liang, H. Ye, Q. Hu, Hui-jun He, Limin Wang","doi":"10.1109/SSLChinaIFWS49075.2019.9019790","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019790","url":null,"abstract":"Nano-copper powder is prepared by liquid phase reduction method in ethylene glycol solvent system. Nano-copper paste is prepared by mixing with organic carriers and subjected to pressureless sintering. The influence of different reducing agent systems on the particle size and morphology of nano-copper powder are studied. The sintering properties of the copper paste are tested by TEM, XRD and SEM. The results indicate that the synthesized product of using ethylene glycol as the reaction solvent and reducing agent is pure copper power and particle size from 100 nm to 200 nm at 160°C; The nano-copper paste can achieve metallurgical bonding at 300°C and the density of the sintered layer gradually increases with the sintering time prolonged, the porosity is gradually reduced, and the sintering of the nano-copper powder for 30 minutes is basically stable.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114439821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Corrosion Failure Analysis and Coping Strategies of Light Reflecting Devices in Light-Emitting Diode Devices 发光二极管器件中反射器件腐蚀失效分析及应对策略
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019783
Lyu Tiangang, Wang Yuefei, Lyu Henan, Wang Caixia, Chen Lihe, Xu bingjian, T. Leming
{"title":"Corrosion Failure Analysis and Coping Strategies of Light Reflecting Devices in Light-Emitting Diode Devices","authors":"Lyu Tiangang, Wang Yuefei, Lyu Henan, Wang Caixia, Chen Lihe, Xu bingjian, T. Leming","doi":"10.1109/SSLChinaIFWS49075.2019.9019783","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019783","url":null,"abstract":"In the research, manufacturing and application process of light-emitting diodes, chemical corrosion is one of the most important causes of blackening of light-emitting diode (hereinafter referred to as LED) light-reflecting devices, which causes light decay and leads to product failure[1].This paper studies the technical background, formation mechanism, risk traceability, solution, performance evaluation scheme, fault analysis scheme and related technical standards at home and abroad for the corrosion failure of LED reflectors.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124159014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advanced Chemical Concentration Control for Fabrication of Devices Using SiC 碳化硅器件制造中的先进化学浓度控制
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019782
J. Boecker, I. Kashkoush, D. Waugh
{"title":"Advanced Chemical Concentration Control for Fabrication of Devices Using SiC","authors":"J. Boecker, I. Kashkoush, D. Waugh","doi":"10.1109/SSLChinaIFWS49075.2019.9019782","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019782","url":null,"abstract":"In conventional MEMS fabrication, relatively inert compounds such as Si3N4 are used as an etch stop or mask for creating patterns on wafers. However, materials such as this require insight as to their etch selectivity corresponding to that of the substrate material and are not suitable for high temperature devices. When developing these high temperature compatible devices, components composed of SiC are desired, and may be used as an etch stop due to it being chemically inert. For these applications, it is common for the substrate or sacrificial layer to be either Si or SiO2. A technique for advanced chemical concentration control during processing is critical to be able to maintain a consistent etch rate, a controlled etch depth, and maintain the desired shape of the pattern. Using NIR technology it is possible to monitor both the concentration of chemicals in the bath as well as that of byproducts created from the etching of Si and SiO2. The system can then increase bath life and the ability to etch consistently within and across batches. In the present paper, we present the mechanism of the advanced concentration control, the results of using either TMAH or KOH to etch Si, as well as its applications for the future of SiC integrated devices.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129347367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influences of Blue Component in White Light on Visual Discomfort 白光中蓝色成分对视觉不适的影响
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019753
Yin Zhang, Y. Tu, Lili Wang
{"title":"Influences of Blue Component in White Light on Visual Discomfort","authors":"Yin Zhang, Y. Tu, Lili Wang","doi":"10.1109/SSLChinaIFWS49075.2019.9019753","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019753","url":null,"abstract":"An increasing population suffers from visual stress like eye strain, even myopia, which may be related with the high blue component of artificial light sources. The aim of this study is to investigate the influence of blue component on visual discomfort using EEG and EOG measurements. The results revealed that complex visual discomfort yielded under blue-enriched white light with EEG alpha activity enhanced near the central area and around parietal and occipital regions, as well as frequent blink. It suggests that the long-term exposure to commonly used light source with enriched blue component might relate with the produce of myopia.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"254 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132411645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application of In-situ Pre-epi Clean Process for Next Generation Semiconductor Devices 新一代半导体器件原位预渗清洁工艺的应用
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019762
D. Waugh, Gim S. Chen, J. Boecker, I. Kashkoush
{"title":"Application of In-situ Pre-epi Clean Process for Next Generation Semiconductor Devices","authors":"D. Waugh, Gim S. Chen, J. Boecker, I. Kashkoush","doi":"10.1109/SSLChinaIFWS49075.2019.9019762","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019762","url":null,"abstract":"As electronic devices are evolving to more diversified and specifically function-oriented applications, silicon-based semiconductors have shown their limitation to unprecedented functionality requirements such as high power, high frequency, and high temperature operation. Growing utilization of IV-IV compounds (e.g. SiGe, SiC), III-V compounds (e.g. GaAs, GaN) as well as hetero-epitaxial structures with Si has become an inevitable trend. Due to cost and size of SiC and GaN wafers, epitaxial deposition on Si is utilized. However, this requires an efficient pre-epitaxial wet cleaning of the Si wafer yielding the lowest defects possible. In this study, different HF-last processes were tested yielding that an in-situ process with dilute chemicals gives the best results.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134470635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SSLChina: IFWS 2019 Table of Contents SSLChina: IFWS 2019目录
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/sslchinaifws49075.2019.9019778
{"title":"SSLChina: IFWS 2019 Table of Contents","authors":"","doi":"10.1109/sslchinaifws49075.2019.9019778","DOIUrl":"https://doi.org/10.1109/sslchinaifws49075.2019.9019778","url":null,"abstract":"","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131759169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
6.5kV Silicon Carbide Discontinuous Trenched Junction Barrier Schottky Diode 6.5kV碳化硅断续沟结势垒肖特基二极管
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019785
Zhiyu Chen, Xuan Li, Xiaochuan Deng, Jun-tao Li, Zhiqiang Li, Y. Zhang, Bo Zhang
{"title":"6.5kV Silicon Carbide Discontinuous Trenched Junction Barrier Schottky Diode","authors":"Zhiyu Chen, Xuan Li, Xiaochuan Deng, Jun-tao Li, Zhiqiang Li, Y. Zhang, Bo Zhang","doi":"10.1109/SSLChinaIFWS49075.2019.9019785","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019785","url":null,"abstract":"In this paper, a new affordable trenched junction barrier Schottky (TJBS) called discontinuous TJBS (DTJBS) diode is proposed and investigated for its better current conduction capability than TJBS. TJBS diode has a poor area of Schottky contact, which is the main cause of the increment of forward voltage (Vf) compared with DTJBS diode. In order to optimize the Vf, physical insights into 6.5kV silicon carbide (SiC) DTJBS diode is carried out by TCAD Silvaco, then shielding effect and current conduction capability are compared with TJBS and analyzed to verify the advantages of DTJBS’s lower Vf. Eventually, The Vf of the device achieves 1.89V while the current is 15A.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130582816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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