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2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)最新文献

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Comparison of Life Testing Standards for LED Lighting Products LED照明产品寿命测试标准比较
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019768
Zhu Zhike, Cao Suming, Cai Sha-sha, Shi Tingting, Lian Yuanhui
{"title":"Comparison of Life Testing Standards for LED Lighting Products","authors":"Zhu Zhike, Cao Suming, Cai Sha-sha, Shi Tingting, Lian Yuanhui","doi":"10.1109/SSLChinaIFWS49075.2019.9019768","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019768","url":null,"abstract":"Due to its high luminous efficacy, small size, low energy consumption, high reliability and long lifetime, LED has become the 3rd generation light source, after incandescent lamp and fluorescent lamp. In 2017, the LED market reaches a new high point of 653.8 billion RMB, and penetrates to new applications such as plant and animal cultivation, visible light communication, medical and health care, etc. Conventional test methods are no longer suitable for LED luminaires. LED modules and luminaires lifetime test follows US DoE Energy Star, IES LM-79, IES LM-80, IES LM-82, IES LM-84, IES TM21, IES TM28 etc. which require a 6000hrs test duration. This has affected the rapid development of the LED application industry, so it is particularly urgent to develop and select appropriate accelerated life test methods for LED products.This paper compares three kinds of fast/accelerated life testing methods for LED products, summarizes the advantages and disadvantages of each method, and provides some choices for life testing of LED products.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"256 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116048265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Calculation Method for Chicken Perceived Light Intensity 鸡感知光强的计算方法
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019766
Zhichao Li, Xiaocui Wang, Baoming Li, Weichao Zheng, Zhengxiang Shi, Q. Tong
{"title":"Calculation Method for Chicken Perceived Light Intensity","authors":"Zhichao Li, Xiaocui Wang, Baoming Li, Weichao Zheng, Zhengxiang Shi, Q. Tong","doi":"10.1109/SSLChinaIFWS49075.2019.9019766","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019766","url":null,"abstract":"Poultry has superior visual function. Its visible spectrum is wider than humans (380–760 nm) and its sensitivity is high. To study chicken perceived light intensity, seven light intensities from full-spectrum white light, monochromatic blue light and monochromatic green light were set-up. Measurement and comparison of differences between chicken perceived light and human perceived light were conducted. Results showed that the difference between them was significant (P<0.01). Both wavelength band and light intensity had effect on the ratio of chicken perceived light and human perceived light (P<0.01). Therefore, lx-meter and photometric unit lx used in poultry production and research were not appropriate. In order to scientifically set poultry house lighting conductions and reasonably evaluate the illumination environment, the actual chicken perceived light intensity should be considered and applied.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115449162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Studies on primary lens for LED light source to enhance lateral emission intensity 提高LED光源侧向发射强度的主透镜研究
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/sslchinaifws49075.2019.9019771
Wenting Tang, Baojin Chen, Rui Zhang, Baoxing Wang, Yunfei Sun, J. Min, Shuqi Li, Yong Cai
{"title":"Studies on primary lens for LED light source to enhance lateral emission intensity","authors":"Wenting Tang, Baojin Chen, Rui Zhang, Baoxing Wang, Yunfei Sun, J. Min, Shuqi Li, Yong Cai","doi":"10.1109/sslchinaifws49075.2019.9019771","DOIUrl":"https://doi.org/10.1109/sslchinaifws49075.2019.9019771","url":null,"abstract":"Typical LED light sources have lower light utilization efficiency (LUE) in reflective directional illumination applications due to light pattern mismatch. Light patterns are generally controlled by secondary optical systems, which are heavy and large. Compared with the secondary optical system, the primary lens is smaller in size, lighter in weight, and more efficient in light extraction. This work is a preliminary study on the primary lens of LED in order to improve the LUE of LED in reflective directional illumination fields. Experimental result shows that the light extraction efficiency (LEE) of LED light source packaged by a primary optical lens is improved by a maximum proportion of 16.3%. The LUE of the LED packaged with the primary lens is up to 40.1% at 60°. After encapsulating the primary lens, the weighted mean angle of light intensity in the full space is at 57° which is bigger than that of LED without primary lens (46°).","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122403018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improvement of Clamped Inductive Turn-Off Ruggedness of Trench IGBT at Overcurrent Condition with Optimized Split Gate Structure 优化分栅结构提高沟槽IGBT过流箝位电感关断耐用性
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019803
Jiang Lu, Jiawei Liu, Xiaoli Tian, Hong Chen, Fei Liang, Y. Bai
{"title":"Improvement of Clamped Inductive Turn-Off Ruggedness of Trench IGBT at Overcurrent Condition with Optimized Split Gate Structure","authors":"Jiang Lu, Jiawei Liu, Xiaoli Tian, Hong Chen, Fei Liang, Y. Bai","doi":"10.1109/SSLChinaIFWS49075.2019.9019803","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019803","url":null,"abstract":"In this paper, the clamped inductive turn-off ruggedness of a novel Trench Insulated Gate Bipolar Transistor (TIGBT) at overcurrent condition is studied by numerical simulation. This proposed structure is optimized by using split gate structure to improve the turn-off reliability. Simulation result shows that the maximum turn-off critical current of the proposed TIGBT increases for about 42.8% compared with the conventional TIGBT structure. The main reason is that the electric field of the proposed structure is redistributed by RESURF effect at the trench bottomed area, resulting to attenuate the current filament at local area. In addition, the hole which concentrated at the trench bottom area is less because the bottom part of split gate polysilicon is shorted with the emitter. Therefore, the local dynamic avalanche effect which triggered by the excessive carriers concentration and high peak electric filed accumulation is weakened. The turn-off ruggedness of the proposed structure is enhanced effectively and the electrical parameters are not compromised but even better compared with conventional structure.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128614914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electro-thermal Analysis of 1.2kV-100A SiC JBS Diodes Under Surge Current Stress 浪涌电流下1.2kV-100A SiC JBS二极管的电热分析
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019788
Wei Zhong, Yidan Tang, Chengzhan Li, Hong Chen, Y. Zhang, Y. Bai, Xinyu Liu
{"title":"Electro-thermal Analysis of 1.2kV-100A SiC JBS Diodes Under Surge Current Stress","authors":"Wei Zhong, Yidan Tang, Chengzhan Li, Hong Chen, Y. Zhang, Y. Bai, Xinyu Liu","doi":"10.1109/SSLChinaIFWS49075.2019.9019788","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019788","url":null,"abstract":"The reliability of power diode under large surge current stress is crucial to the applications. In this paper, the electrothermal simulation and experimental evaluation of surge failure mechanisms of high current 1200V SiC JBS diodes were conducted. Different from thermal analysis from the perspective of thermal network, this paper combines TCAD simulation with 3D-thermal simulation for electrothermal simulation, which makes the electrical and thermal characteristics more intuitively combined. Through simulation, it is found that the contact thermal resistance between bonding wire and pad and the heating of bonding wire itself will lead to the temperature concentration near the bonding wire. The mechanism is verified by a forward nonrepetitive surge test, and the results are consistent with the simulation results.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116700397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The impact of Emel range of dynamic lighting on alertness, fatigue and sleeping quality 动态光照Emel范围对警觉性、疲劳和睡眠质量的影响
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019801
Yu Liu, M. Luo, P. Wu, Binyu Teng
{"title":"The impact of Emel range of dynamic lighting on alertness, fatigue and sleeping quality","authors":"Yu Liu, M. Luo, P. Wu, Binyu Teng","doi":"10.1109/SSLChinaIFWS49075.2019.9019801","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019801","url":null,"abstract":"Our earlier works found dynamic lighting to have some positive effect on alertness and circadian response comparing with static light. This study further investigates different CCT ranges and melanopicilluminance (Emel) or circadian stimulus (CS) of dynamic lightings. Sixteen subjects participated the experiment including 4 lightings, one each day from 20:30 to 23:00, and 4 days apart between each lighting. Four different lightings include two CCT ranges (from 6000K to 12000K and from 3000K to 9000K), each having a low and a high Emel level. Six testing methods were included task performance (the D2 test, go/no go), Critical Flicker Frequency (CFF), ocular fatigue questionnaire, sleepiness (Karolinska sleepiness scale), biochemical responses (melatonin and cortisol). The results showed that subjects were statistically significant more alert under high Emel lightings from the results of task performance, CFF, and both biochemical responses. As for the KSS and ocular-fatigue results, subjects felt sleepier and less fatigue under both low Emel and low CCT range lightings. The strong duration effect was revealed from the results of KSS, ocular fatigue and biochemical responses.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116261547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Facet Formation of AlGaN/AlN-based Multiple Quantum Wells by Laser Scribing 激光刻划制备AlGaN/ aln基多量子阱
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019808
Bin Xue, Jianchang Yan, Yanan Guo, Chunyan Liu, Yiping Zeng, Junxi Wang, Jinmin Li
{"title":"Facet Formation of AlGaN/AlN-based Multiple Quantum Wells by Laser Scribing","authors":"Bin Xue, Jianchang Yan, Yanan Guo, Chunyan Liu, Yiping Zeng, Junxi Wang, Jinmin Li","doi":"10.1109/SSLChinaIFWS49075.2019.9019808","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019808","url":null,"abstract":"We proposed a laser-assisted method to obtain smooth Fabry-Perot cavity facet of AlGaN-based UV laser structure grown on c-plane sapphire. We demonstrated that laser scribing parameters has significant influence on the morphology of the cleavage plane. Smoothness and uniformity of the facet was improved by choosing appropriate cleaving direction, distance and depth. Therefore, laser scribing is an effective and controllable process to fabricate facets of AlGaN-based laser.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"10 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115784210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of Dynamic-Brightness Environment on Ocular Physiological Parameters 动态亮度环境对眼生理参数的影响
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019811
Shanshan Zeng, Wentao Hao, Ya Guo, Xiangyu Qu, Ke Wei, Shanshan Tang, Rongrong Wen, Jianqi Cai
{"title":"Influence of Dynamic-Brightness Environment on Ocular Physiological Parameters","authors":"Shanshan Zeng, Wentao Hao, Ya Guo, Xiangyu Qu, Ke Wei, Shanshan Tang, Rongrong Wen, Jianqi Cai","doi":"10.1109/SSLChinaIFWS49075.2019.9019811","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019811","url":null,"abstract":"In this study, we were sought to compare the influence of lighting environment with constant brightness and dynamic brightness on human ocular physiological parameters. We chose 20 participants for the human factor experiments. To measure the influence of lighting environment on ocular physiological parameters, three ocular physiological parameters were used in the current study: far point accommodation, the 4th and the 12th terms of aberrations. It was found that far point accommodation presented more significant response to the lighting environment with constant brightness than that with dynamic brightness, and sphere aberrations presented insensitive to the brightness variation. Both aberrations and far point accommodation could reflect the influence of lighting environment on human eye, while far point accommodation presented higher sensitivity to the lighting environment compared to sphere aberrations.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126139118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Review of High Power Phosphor-Converted Light-Emitting Diodes 大功率磷光转换发光二极管的研究进展
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019776
Yan Li, Yuming Yang, Huaiwen Zheng, Fei Yu, Qiao Liang, Hua Yang, X. Yi, Junxi Wang, Jinmin Li
{"title":"Review of High Power Phosphor-Converted Light-Emitting Diodes","authors":"Yan Li, Yuming Yang, Huaiwen Zheng, Fei Yu, Qiao Liang, Hua Yang, X. Yi, Junxi Wang, Jinmin Li","doi":"10.1109/SSLChinaIFWS49075.2019.9019776","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019776","url":null,"abstract":"With the increasing demand for high-brightness white light illumination, Researchers work on phosphor-converted light-emitting diodes (PC-LED) solid-state lighting from the begining. A variety of parameters play a significant role in determining the quality of PC-LED, which can meet the requirements of high power density, lightweight and small volume. Therefore, the encapsulant in PC-LED package, phosphors must have good thermal stability and optical properties. In order to comply with this demand, the effects of the encapsulant material, phosphor layer thickness, concentration, particle size, distance between the phosphor layer and the chip on the optical properties and thermal properties of the LED were summarized. It will be useful for future research on PC-LED.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126167565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
SSLChina: IFWS 2019 Copyright Page SSLChina: IFWS 2019版权所有
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/sslchinaifws49075.2019.9019795
{"title":"SSLChina: IFWS 2019 Copyright Page","authors":"","doi":"10.1109/sslchinaifws49075.2019.9019795","DOIUrl":"https://doi.org/10.1109/sslchinaifws49075.2019.9019795","url":null,"abstract":"","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133699543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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