2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)最新文献_第7页

Effect of Different LED Light Sources on Growth and Development of Cherry Radish 不同LED光源对樱桃萝卜生长发育的影响

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019767

Zhipeng Wen, S. Luo, Hongyu Wei, Xiaomin Li, Jiawei Liu, Zhiyu Ma

引用次数: 0

A Novel Scalable Series MIM Capacitor Model for MMIC Applications 一种适用于MMIC应用的新型可扩展串联MIM电容器模型

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019775

Chupeng Yi, Yang Lu, Hengshuang Zhang, Ziyue Zhao, Xiao-hua Ma, Y. Hao

{"title":"A Novel Scalable Series MIM Capacitor Model for MMIC Applications","authors":"Chupeng Yi, Yang Lu, Hengshuang Zhang, Ziyue Zhao, Xiao-hua Ma, Y. Hao","doi":"10.1109/SSLChinaIFWS49075.2019.9019775","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019775","url":null,"abstract":"With the development of the wireless communication and integrated circuits, Integrated passive devices (IPDs) have gained more and more application in radio frequency (RF) integrated circuit and monolithic microwave integrated circuits (MMICs). Among IPDs, MIM capacitor is a key passive component, widely used in DC-bias circuit, decoupling, etc. Therefore, the accuracy and practicability of the capacitance model is one of the key factors for the success of circuits design.However, since the MIM capacitor has many parasitic effects at high frequencies, it no longer exhibits pure capacitor characteristics anymore, thus, in high frequency circuit design, a simplified equivalent circuit model that can accurately characterizes the components is essential for the successful design of the circuit.As SiC-based GaN devices exhibit the advantages of high temperature and high power in millimeter wave applications, more and more integrated circuit use SiC-based GaN devices and components. With regards to this we produced a series of MIM capacitors of different sizes with air-bridges have been fabricated on 4H–SiC substrate. Also, we proposed a novel of simple broadband, based on the physical parameter equivalent circuit model of MIM capacitor structure.Based on the traditional equivalent circuit model, we introduce the corresponding components that characterize the skin effect and loss of the metal. The lumped element model is a simplified physical based model with broadband and high precision, and parameter extraction is given. To verify the accuracy and versatility of the model, we compared the measured and model simulated results of a series of MIM capacitors of different sizes. The results show that the model can accurately fit the S-parameters between measured and simulated in operating frequency range. In addition, the model shows good scalability as well.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134418354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Violet Chip Excited White LEDs for Sun-Like Lighting and Horticulture Lighting 用于太阳照明和园艺照明的紫色芯片激发白光led

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019777

Yue Zhuo, Huaiyu Zhu, Chong-yu Shen, G. Sun, J. G. Liu

引用次数: 0

Effect of Mechanical Stress on the Electrical Characteristics of Different Type IGBT Chips 机械应力对不同类型IGBT芯片电学特性的影响

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019764

Yihui Zhang, Jinyuan Li, Yinghan Liu, Guanbin Wu

引用次数: 0

High-efficiency GaN-based LED with patterned SiO2 passivation layer and discontinuous current block layer 具有图案化SiO2钝化层和不连续电流块层的高效氮化镓基LED

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019804

Jie Deng, Wei-ling Guo, Jianpeng Tai, Zehua Lu, Mengmei Li, Qinghua Yu

{"title":"High-efficiency GaN-based LED with patterned SiO2 passivation layer and discontinuous current block layer","authors":"Jie Deng, Wei-ling Guo, Jianpeng Tai, Zehua Lu, Mengmei Li, Qinghua Yu","doi":"10.1109/SSLChinaIFWS49075.2019.9019804","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019804","url":null,"abstract":"GaN-based blue light-emitting diodes (LEDs) with patterned SiO2 passivation layer and discontinuous current block layer (CBL) has been proposed and fabricated. The patterned SiO2 passivation layer is inserted between Indium tin oxide (ITO) and P/N electrodes, and has a series of windows under the P and N electrodes, it can not only isolate the N electrode from the sidewall to prevent leakage, but also can re-contact the P electrode with ITO to form discontinuous P electrode structure and current injection. For the etching of active region, we use the method that partially etched to form a discontinuous N-GaN mesa, which can reduce the loss of the active area and improve the light emission intensity of the LEDs. It can be called discontinuous N-electrode structure. In addition, the discontinuous CBL deposited between P-GaN and ITO can increase the light extract efficiency from the active region under the P electrode compared to the conventional LED structure. As a result, at an injection current of 150mA, the light output power of the LED with patterned SiO2 passivation layer and discontinuous CBL was 7.06% higher than that of conventional structure LED. What’s more, at 50mA, the LED with the patterned SiO2 passivation layer and discontinuous CBL structure shows the lower forward voltage of 3.29V compared with the conventional LED of 3.41V.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122011874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of intelligent temperature control driving circuit for high power LED array 大功率LED阵列智能温控驱动电路的设计

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019754

Fei Wang, Houda Zhou, Jingjing Liu, Luqiao Yin, Jianhua Zhang

{"title":"Design of intelligent temperature control driving circuit for high power LED array","authors":"Fei Wang, Houda Zhou, Jingjing Liu, Luqiao Yin, Jianhua Zhang","doi":"10.1109/SSLChinaIFWS49075.2019.9019754","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019754","url":null,"abstract":"A new type of high-power underwater lighting LED driver circuit is proposed. This design studies and designs the electrical performance stability, temperature regulation and LED array arrangement of LED array circuits. The temperature control mainly uses the temperature sensor module for detection, and the temperature feedback is timely performed by the MCU. When the temperature reaches the set temperature gradient threshold, the PWM is adjusted in time to adjust the current to achieve the brightness reduction. The purpose of heat generation is to adjust the temperature; the other point is mainly to design the voltage regulator circuit part. The stability of the circuit is very important for the LED array circuit and the peripheral circuit in this design, which also becomes the judgment circuit. One of the key indicators. This paper mainly designs the circuit stability for input voltage regulation and temperature control adjustment. Underwater illumination flux will also have certain requirements, LED array arrangement is also very important. Through the simulation experiment, the hexagonal array arrangement is adopted. For the above three points, a high-power LED driver circuit is developed. Finally, through the specific experiment to verify the operation of the circuit, the overall operation of the circuit is good, the dimming, voltage regulation is good and the efficiency is high, and the design goal is achieved.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127708090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and Fabrication of 3300V 100mΩ 4H-SiC MOSFET with Stepped p-body Structure 3300V 100mΩ阶跃p体结构4H-SiC MOSFET的设计与制造

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019791

W. Ni, T. Erlbacher, Xiaoliang Wang, Miaoling Xu, Mingshan Li, C. Feng, H. Xiao, Wei Li, Quan Wang, H. Schlichting

引用次数: 2