机械应力对不同类型IGBT芯片电学特性的影响

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI:10.1109/SSLChinaIFWS49075.2019.9019764

Yihui Zhang, Jinyuan Li, Yinghan Liu, Guanbin Wu

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引用次数: 0

摘要

IGBT功率半导体器件在现代电力系统中应用广泛，其电气特性直接影响变换器的性能。首先，总结了机械应力对MOSFET和IGBT芯片电学特性的影响。从芯片技术和封装技术两个方面总结了IGBT模块中机械应力的产生方式，并对不同类型IGBT芯片的电学特性进行了讨论。分析了不同方向的机械应力对不同类型IGBT芯片电特性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of Mechanical Stress on the Electrical Characteristics of Different Type IGBT Chips

IGBT power semiconductor devices are widely used in modern power systems, and their electrical characteristics directly affect the performance of converters. Firstly, the influence of mechanical stress on the electrical characteristics of MOSFET and IGBT chips is summarized. The way of mechanical stress generation in IGBT module is summarized from two aspects of chip technology and packaging technology, and the electrical characteristics of different types of IGBT chips are also discussed. The effects of mechanical stresses in different directions on the electrical characteristics of different types of IGBT chips are analyzed.

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来源期刊

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

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