2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)最新文献_第6页

Research on a Smart LED Lighting Based on Improved Flyback Driver 基于改进反激驱动的智能LED照明研究

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019784

Wenran Liu, Weiming Lin

引用次数: 0

Optimal thermal design of LED automotive headlamp with the response surface method 基于响应面法的LED汽车前照灯热优化设计

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019807

Zhi Tang, Jiajie Fan, Wei Chen, Yutong Li, Moumouni Guero Mohamed, Ru Li

{"title":"Optimal thermal design of LED automotive headlamp with the response surface method","authors":"Zhi Tang, Jiajie Fan, Wei Chen, Yutong Li, Moumouni Guero Mohamed, Ru Li","doi":"10.1109/SSLChinaIFWS49075.2019.9019807","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019807","url":null,"abstract":"Light Emitting Diode (LED) is gradually being applied in automotive lighting systems as the new generation of light source. Recently, increasing demands are adapt on automotive headlamps, including not only being functionally perfect, cost-effective and durable, but also with fashion, energy saving and environmental protection. LED light source has the advantages of long lifetime, high efficiency and energy saving, compact size etc., therefore, it has been widely used in headlamps, turn signals, brake lights, position lights, etc., and will soon become the mainstream of the automotive light source market. Although it has higher energy conversion efficiency, LED headlamp is still suffering difficulties on the thermal management. In this paper, we optimize the designs of heatsink for a commercialized LED automotive headlamp module by using the response surface method. Firstly, the temperature distribution of the test sample is simulated by the finite element (FE) method. Then, we use the response surface method to optimize the design parameters of heatsink on its thermal dissipation capacity. The results indicate that: (1) Through optimizing the structure of the heat sink with the thickness, spacing and height of fins as 3mm, 9mm and 60mm respectively, the LED junction temperature drops by 2.9%; (2) By changing the materials of heat sink and PCB substrate as 6063 aluminum alloy and AlN respectively, the LED junction temperature lowers down by 11.9%.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"184 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124657067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Simulation Study on Current Collapse Effect of E GaN HEMT 氮化镓HEMT电流坍缩效应的仿真研究

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019793

G. Weiling, Ma Qijing, D. Shuai, Lin Tianyu, Zhu Yanxu

{"title":"Simulation Study on Current Collapse Effect of E GaN HEMT","authors":"G. Weiling, Ma Qijing, D. Shuai, Lin Tianyu, Zhu Yanxu","doi":"10.1109/SSLChinaIFWS49075.2019.9019793","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019793","url":null,"abstract":"GaN high electron mobility transistor(GaN HEMT) has high channel electron concentration, high electron mobility and high breakdown voltage, which makes it have great development prospects in high frequency, microwave and other fields. In the development of GaN HEMT, suppressing current collapse has always been the focus and difficulty of research. Based on SILVACO TCAD simulation software, the current collapse suppression by field plate structure is studied and discussed in this paper. Firstly, the model of enhanced GaN HEMT device is established and its correctness is verified. Then, the phenomenon of current collapse and virtual gate model are introduced. From the theory of improving breakdown voltage of device by field plate structure as the starting point, field plate structure is added to the device model and simulation experiments are carried out. According to the results, the principle of suppression current collapse by field plate structure is analyzed, and the correctness of virtual grid model is verified.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126669784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Compact X-band Pallet Power Amplifier Using Gallium Nitride MMIC and Discrete FETs with HMIC Technology 采用氮化镓MMIC和HMIC技术的离散场效应管的紧凑x波段托盘功率放大器

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019765

Wang Yi, He Jian, Huang Luoguang, Ni Tao, Yin Jun, Mo Jianghui, Yu Ruoqi, Li Jing, Dong Shiliang, Liu Ze, Chen Lei

引用次数: 0

The Effect of Lighting on Stereo Vision Test with Random-Dot Stereogram 光照对随机点立体图立体视觉测试的影响

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019781

Jinfeng Huang, Tingting Zhang, Yudi Wang, Jinwei Xie, Xiaofeng Liu

{"title":"The Effect of Lighting on Stereo Vision Test with Random-Dot Stereogram","authors":"Jinfeng Huang, Tingting Zhang, Yudi Wang, Jinwei Xie, Xiaofeng Liu","doi":"10.1109/SSLChinaIFWS49075.2019.9019781","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019781","url":null,"abstract":"Depth perception is the ability of people to evaluate the relative and absolute distance. Industry practitioners such as pilots, car drivers, athletes, tailors, and seafarers, always require better stereo vision and good depth perception ability to achieve high efficiency and good performance. Meanwhile, the lighting environment is another important factor that influence their working performance. This paper investigated the influence of ambient luminance and screen brightness on depth perception based on Random-Dot Stereograms. In the experiment, we set three ambient illumination and three screen brightness to test. We found depth perception of the participants was influenced by screen brightness (16 Lux, 8 Lux and 1.5 Lux), but not influenced by ambient illumination (124 Lux, 20 Lux, 2 Lux). Hence, we could conclude that the ambient illumination of 124 Lux, 20 Lux, 2 Lux is a safe lighting that does not influence depth perception and it is not suitable for operators to work with the screen brightness of 16 Lux,8 Lux and 1.5 Lux.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133348326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analysis of Smart Wall Switch without Neutral Wire Compatibility Issue 无中性线智能墙开关兼容性问题分析

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019799

Yang Hu, Wei-ning Wen, Wanghui Yan, Ran Ding

引用次数: 0

Multi-chip dynamic white light emitting diode with high level photobiological safety and good color fidelity 多芯片动态白光发光二极管，具有高水平的光生物安全性和良好的色彩保真度

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019809

J. Nie, Yongzhi Wang, Shunfeng Li, Guoyi Zhang, B. Shen, Zhizhong Chen, F. Jiao, Chengcheng Li, Yifan Chen, J. Zhan, Yiyong Chen, T. Yu, X. Kang

{"title":"Multi-chip dynamic white light emitting diode with high level photobiological safety and good color fidelity","authors":"J. Nie, Yongzhi Wang, Shunfeng Li, Guoyi Zhang, B. Shen, Zhizhong Chen, F. Jiao, Chengcheng Li, Yifan Chen, J. Zhan, Yiyong Chen, T. Yu, X. Kang","doi":"10.1109/SSLChinaIFWS49075.2019.9019809","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019809","url":null,"abstract":"Blue light hazard has been the main concern of photobiological safety of light emitting diode (LED) and blue light hazard efficiency of radiation (BLHER) is used to evaluate the extent of blue light hazard. In this work, we used four monochromatic LEDs with the color of purple, azure, green, and red to mix light without blue LED, in order to reduce the BLHER of hybrid white light. Also, the mixed white light kept high level of color fidelity when the correlated color temperature (CCT) ranges from 2700 to 7000 K. Color rendering index (CRI), color fidelity score (Rf), and color gamut score (Rg) are used to evaluate the color fidelity. We simulated the spectrum and parameters of hybrid white light based on different peak wavelengths, full width at half maxima (FWHMs), and relative ratios of four LEDs. Finally, we fabricated a four-channel LED to obtain tunable white light with high level of photobiological safety and good color fidelity, which BLHER is 0.185 at 7110 K, CRI, Rf and Rg are larger than 85.0, 78.7 and 87.4, respectively.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115117520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Investigation of Defect Levels of Al/Ti 4H-SiC Schottky structures by Deep Level Transient Spectroscopy Al/Ti 4H-SiC肖特基结构缺陷能级的深能级瞬态光谱研究

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019805

Yawei He, Guoguo Yan, Xingfang Liu, Zhanwei Shen, Wanshun Zhao, Lei Wang, Feng Zhang, Guosheng Sun, Yiping Zeng

{"title":"Investigation of Defect Levels of Al/Ti 4H-SiC Schottky structures by Deep Level Transient Spectroscopy","authors":"Yawei He, Guoguo Yan, Xingfang Liu, Zhanwei Shen, Wanshun Zhao, Lei Wang, Feng Zhang, Guosheng Sun, Yiping Zeng","doi":"10.1109/SSLChinaIFWS49075.2019.9019805","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019805","url":null,"abstract":"The performance of silicon carbide bipolar devices is limited by the material quality of substrates and epitaxial layers. There are many aspects, one of which is the deep level defects in the epitaxial layer, that affect the quality of materials. N-type 4° off-axis Si-face silicon carbide epitaxial layers were investigated by deep level transient spectroscopy (DLTS), which includes C-V/I-V measurement, DLTS signal spectrum measurement and Arrhenius fitting analysis processes. The energy level position, concentration and capture cross-section of the deep level defects were obtained accurately after the measurement and analysis. Z1/2 defect was found to be a dominant deep level for all the as-grown samples because it existed in all the samples we characterized. So Z1/2 defect is widely distributed on epitaxial layers. The largest defect concentration in all samples is Z1/2 defect, which means that it was obviously the most influential defect type in this work. In addition to Z1/2 defects, three other deep levels had been found which were RD1/2, EH5 and the one with defect energy level position near 1.209eV.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126638121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Effect of Illuminance and Light Strobe on Attention and Visual Fatigue in Indoor Lighting 照度和频闪对室内照明中注意力和视觉疲劳的影响

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019810

Jin Yang, Tianchi Zhang, Yandan Lin, W. Xu

{"title":"Effect of Illuminance and Light Strobe on Attention and Visual Fatigue in Indoor Lighting","authors":"Jin Yang, Tianchi Zhang, Yandan Lin, W. Xu","doi":"10.1109/SSLChinaIFWS49075.2019.9019810","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019810","url":null,"abstract":"For indoor lighting, illuminance is one of the important factors which can indicate the quality of lighting condition. However, with the popularity of LEDs, temporal light artefacts (TLA) caused by LED drivers or PWM technique has also become another consideration for evaluating the indoor lighting. One major factor that affects TLA is the frequency of light strobe. Even frequency is too high to be perceived, it will also have a negative impact on people’s attention and visual perception to a certain extent. Previous studies seldom studied the combination effect of illuminance and frequency. Therefore, this study combined these two factors to investigate the change of various indicators that reflect people’s attention and visual fatigue under different indoor lighting conditions. Three illuminance levels, 50lx, 150lx and 500lx and three frequency levels, 100Hz, 300Hz and 1000Hz were analyzed. A within-subject design was adopted. Twelve healthy students participated in the experiment. Subjective evaluation scales and the D2 task were used as the experimental methods. Factor analysis and MANOVAs were used for the data analysis. It was found out that illuminance significantly affected subjects’ attention and alertness (p<0.05). Meanwhile, visual fatigue such as ghosting and blurring mainly caused by frequency was affected by illuminance (p = 0.038<0.05), which proved our hypothesis.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129176779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

The Synthesis of Large-size Silicon Carbide Powder for Crystal Growth 晶体生长用大尺寸碳化硅粉的合成

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI: 10.1109/SSLChinaIFWS49075.2019.9019761

Fang Jiao, Dianpeng Cui, M. Yang, Z. Wu, B. Dong

引用次数: 0