采用氮化镓MMIC和HMIC技术的离散场效应管的紧凑x波段托盘功率放大器

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI:10.1109/SSLChinaIFWS49075.2019.9019765

Wang Yi, He Jian, Huang Luoguang, Ni Tao, Yin Jun, Mo Jianghui, Yu Ruoqi, Li Jing, Dong Shiliang, Liu Ze, Chen Lei

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引用次数: 0

摘要

本文介绍了一种采用氮化镓MMIC和分立场效应管的高集成度托盘功率放大器的设计和特性。该放大器由两个氮化镓mmic和一对兰格耦合器组成的驱动级和由两个裸氮化镓fet和陶瓷匹配/偏置电路组成的功率级组成。整个托盘功率放大器采用混合微波集成电路(hmic)技术组装，整体尺寸为20mm×12mm。当偏置在脉冲条件下时，托盘功率放大器的饱和输出功率可达130W，相关功率增益大于33dB，漏极效率大于35%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Compact X-band Pallet Power Amplifier Using Gallium Nitride MMIC and Discrete FETs with HMIC Technology

This paper describes the design and characterization of a highly integrated pallet power amplifier using Gallium Nitride MMIC and discrete FETs. The amplifier is realized by the combination of a driving stage which consists of two Gallium Nitride MMICs and a pair of Lange couplers and a power stage which consists of two bare Gallium Nitride FETs and ceramic matching/biasing circuits. The complete pallet power amplifier is assembled with hybrid microwave integrated circuits (HMICs) technology with has an overall size of 20mm×12mm. When biased under pulsed condition, the pallet power amplifier has a saturated output power up to 130W, an associated power gain larger than 33dB, and a drain efficiency greater than 35%.

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来源期刊

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

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