The Synthesis of Large-size Silicon Carbide Powder for Crystal Growth

Fang Jiao, Dianpeng Cui, M. Yang, Z. Wu, B. Dong
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Abstract

A study on the synthesis of SiC powder with large size was presented. Special attentions were paid to synthetic temperature and ratio of large and small size silicon powder. Several experiments were designed to understand the effects of these conditions on phase composition, grain size and yield of SiC powder material by using a NAURA Advanced Physical Vapor Transport (PVT) System. It was found that high-quality SiC powder could be acquired at 1950°C for 10h. The rising proportion of large size silicon powder with 500~800μm was beneficial to synthesize large size SiC powder of >750μm. The results showed successful preparation of large size SiC powder and a significant reduction of carbon inclusions in SiC ingots by using SiC powder with large size.
晶体生长用大尺寸碳化硅粉的合成
研究了大粒径碳化硅粉体的合成方法。特别注意了合成温度和大小硅粉的配比。为了了解这些条件对碳化硅粉末材料相组成、晶粒尺寸和产率的影响,采用北方华研先进物理气相输送(PVT)系统设计了多个实验。结果表明,在1950℃下,经过10h,可制得高质量的SiC粉末。增大500~800μm大尺寸硅粉的掺量有利于合成>750μm的大尺寸碳化硅粉。结果表明:大粒径碳化硅粉制备成功,可显著降低碳化硅锭中的碳夹杂物;
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