A Compact X-band Pallet Power Amplifier Using Gallium Nitride MMIC and Discrete FETs with HMIC Technology

Abstract

This paper describes the design and characterization of a highly integrated pallet power amplifier using Gallium Nitride MMIC and discrete FETs. The amplifier is realized by the combination of a driving stage which consists of two Gallium Nitride MMICs and a pair of Lange couplers and a power stage which consists of two bare Gallium Nitride FETs and ceramic matching/biasing circuits. The complete pallet power amplifier is assembled with hybrid microwave integrated circuits (HMICs) technology with has an overall size of 20mm×12mm. When biased under pulsed condition, the pallet power amplifier has a saturated output power up to 130W, an associated power gain larger than 33dB, and a drain efficiency greater than 35%.