6.5kV碳化硅断续沟结势垒肖特基二极管

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2019-11-01 DOI:10.1109/SSLChinaIFWS49075.2019.9019785

Zhiyu Chen, Xuan Li, Xiaochuan Deng, Jun-tao Li, Zhiqiang Li, Y. Zhang, Bo Zhang

{"title":"6.5kV碳化硅断续沟结势垒肖特基二极管","authors":"Zhiyu Chen, Xuan Li, Xiaochuan Deng, Jun-tao Li, Zhiqiang Li, Y. Zhang, Bo Zhang","doi":"10.1109/SSLChinaIFWS49075.2019.9019785","DOIUrl":null,"url":null,"abstract":"In this paper, a new affordable trenched junction barrier Schottky (TJBS) called discontinuous TJBS (DTJBS) diode is proposed and investigated for its better current conduction capability than TJBS. TJBS diode has a poor area of Schottky contact, which is the main cause of the increment of forward voltage (Vf) compared with DTJBS diode. In order to optimize the Vf, physical insights into 6.5kV silicon carbide (SiC) DTJBS diode is carried out by TCAD Silvaco, then shielding effect and current conduction capability are compared with TJBS and analyzed to verify the advantages of DTJBS’s lower Vf. Eventually, The Vf of the device achieves 1.89V while the current is 15A.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"6.5kV Silicon Carbide Discontinuous Trenched Junction Barrier Schottky Diode\",\"authors\":\"Zhiyu Chen, Xuan Li, Xiaochuan Deng, Jun-tao Li, Zhiqiang Li, Y. Zhang, Bo Zhang\",\"doi\":\"10.1109/SSLChinaIFWS49075.2019.9019785\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a new affordable trenched junction barrier Schottky (TJBS) called discontinuous TJBS (DTJBS) diode is proposed and investigated for its better current conduction capability than TJBS. TJBS diode has a poor area of Schottky contact, which is the main cause of the increment of forward voltage (Vf) compared with DTJBS diode. In order to optimize the Vf, physical insights into 6.5kV silicon carbide (SiC) DTJBS diode is carried out by TCAD Silvaco, then shielding effect and current conduction capability are compared with TJBS and analyzed to verify the advantages of DTJBS’s lower Vf. Eventually, The Vf of the device achieves 1.89V while the current is 15A.\",\"PeriodicalId\":315846,\"journal\":{\"name\":\"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019785\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019785","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文提出了一种新型的可负担得起的沟槽结势垒肖特基(TJBS)，称为不连续型肖特基二极管(DTJBS)，并对其具有比TJBS更好的电流传导能力进行了研究。TJBS二极管具有较差的肖特基接触面积，这是导致正向电压(Vf)较DTJBS二极管增大的主要原因。为了优化Vf，利用TCAD Silvaco对6.5kV碳化硅DTJBS二极管进行了物理分析，并与TJBS进行了屏蔽效果和电流传导能力的对比分析，验证了DTJBS较低Vf的优势。最终，当电流为15A时，器件的Vf达到1.89V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

6.5kV Silicon Carbide Discontinuous Trenched Junction Barrier Schottky Diode

In this paper, a new affordable trenched junction barrier Schottky (TJBS) called discontinuous TJBS (DTJBS) diode is proposed and investigated for its better current conduction capability than TJBS. TJBS diode has a poor area of Schottky contact, which is the main cause of the increment of forward voltage (Vf) compared with DTJBS diode. In order to optimize the Vf, physical insights into 6.5kV silicon carbide (SiC) DTJBS diode is carried out by TCAD Silvaco, then shielding effect and current conduction capability are compared with TJBS and analyzed to verify the advantages of DTJBS’s lower Vf. Eventually, The Vf of the device achieves 1.89V while the current is 15A.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

自引率

0.00%

发文量