Proceedings. 1998 International Conference on Multichip Modules and High Density Packaging (Cat. No.98EX154)最新文献

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A new concept for using of Al-sheet as integrated substrate for one or multichip module package 利用铝片作为单片或多片模组封装的集成基板的新概念
P. Philippov, R. Arnaudov, N. Yordanov, M. Gospodinova
{"title":"A new concept for using of Al-sheet as integrated substrate for one or multichip module package","authors":"P. Philippov, R. Arnaudov, N. Yordanov, M. Gospodinova","doi":"10.1109/ICMCM.1998.670764","DOIUrl":"https://doi.org/10.1109/ICMCM.1998.670764","url":null,"abstract":"In this paper, we present recent studies on the electromigration processes in Ag thin film parallel microstrip lines in MCM-D structures. The basic concept is application of accelerated local drop-tests of water solutions on the surfaces of two adjacent lines under a given voltage potential. These operational conditions are often met in the interconnection line buses placed in the top assembly level of multilayered hybrid structures. The subject of the investigations are MCM-Ds developed on an Al-sheet carrier with internal conducting and isolating layers, produced through unique selective electrochemical anodization of Al and Ta. This process technology also enables the creation of embedded R and C passive components based on TaO/sub x/N/sub 1-x/ and Ta/sub 2/O/sub 5/ (or Al/sub 2/O/sub 3/) respectively. We propose electrochemical deposition of Ag/Sb alloys on the surface of Al interconnection lines and contact pads to ease the bondability and solderability in chip mounting procedures. The artificially created silver migrated defects and partial shorts are investigated through the high frequency method of coupled transmission lines in order to eliminate the errors and insufficient validity of DC direct measurements.","PeriodicalId":315799,"journal":{"name":"Proceedings. 1998 International Conference on Multichip Modules and High Density Packaging (Cat. No.98EX154)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124462971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transcription solder bump technology using the evaporation method 采用蒸发法誊写焊料凹凸技术
K. Seyama, H. Yamamoto, K. Satou, H. Yoshimura, H. Ota, Y. Usui
{"title":"Transcription solder bump technology using the evaporation method","authors":"K. Seyama, H. Yamamoto, K. Satou, H. Yoshimura, H. Ota, Y. Usui","doi":"10.1109/ICMCM.1998.670800","DOIUrl":"https://doi.org/10.1109/ICMCM.1998.670800","url":null,"abstract":"We have developed a new transcription solder bump (TSB) technology using the evaporation method. We use this method in the current production of micro solder area array bump (/spl mu/SAB) formation with 153 /spl mu/m pitch and on chips with over 8000 bumps. In this method, transcription bumps are formed on a dummy wafer by evaporation using a metal mask. Temporary chips are made by dicing the dummy wafer with evaporated bumps, and then the bumps on the temporary chips are transcribed to real chips. This technology has a high accuracy in terms of bump height of less than 2 /spl mu/m, and bumping yield is greater than 99.99999% per bump. Also, we have developed a restoration technique for solder bumps with high yield and low cost.","PeriodicalId":315799,"journal":{"name":"Proceedings. 1998 International Conference on Multichip Modules and High Density Packaging (Cat. No.98EX154)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116948304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
AMI: A new thin film substrate technology AMI:一种新的薄膜衬底技术
D. Hurwitz, E. Igner, B. Yofis, D. Katz
{"title":"AMI: A new thin film substrate technology","authors":"D. Hurwitz, E. Igner, B. Yofis, D. Katz","doi":"10.1109/ICMCM.1998.670762","DOIUrl":"https://doi.org/10.1109/ICMCM.1998.670762","url":null,"abstract":"An advanced multilayer interconnect (AMI) technology has been developed. This technology offers high density and low cost multilayer substrates for use in build-up MCM-D/L layers and chip scale packages (CSPs). In the AMI manufacturing process, the multilayer is built up on a planarized substrate material, using nonphotosensitive benzocyclobutene (BCB) as an insulator, and micro-filled aluminum vias. Four major steps are involved in the AMI process: (1) aluminum deposition over a planarized base material; (2) selective conversion of the deposited aluminum oxide, thereby creating lines and via posts; (3) replacement of the previously formed aluminum oxide by BCB; (4) mechanical polishing of the coated BCB to expose the top surface of the aluminum via posts. Steps 1 to 4 are repeated until the required number of layers is achieved. A detailed description of the AMI process steps is given. The key processes of metal deposition, adhesion enhancement, anodization and mechanical polishing are discussed. Reliability test data, typical key features and the electrical performance of an AMI prototype are presented. Particularly noteworthy are the advantages offered by the AMI structure: low production cost and large area panel (LAP) processing capabilities; superior planarity provides higher production yield and facilitates flip chip attachment; high density interconnectivity through the use of stacked and padless via posts; outstanding thermal and electrical properties through the use of filled aluminum vias.","PeriodicalId":315799,"journal":{"name":"Proceedings. 1998 International Conference on Multichip Modules and High Density Packaging (Cat. No.98EX154)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129839314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Integrated passive components in MCM-Si technology and their applications in RF-systems MCM-Si技术中的集成无源元件及其在射频系统中的应用
J. Hartung
{"title":"Integrated passive components in MCM-Si technology and their applications in RF-systems","authors":"J. Hartung","doi":"10.1109/ICMCM.1998.670790","DOIUrl":"https://doi.org/10.1109/ICMCM.1998.670790","url":null,"abstract":"Integrated passive components and their application in RF systems in a silicon-on-silicon multichip technology is presented. In high frequency devices, the main use of passive components is for decoupling purposes, matching networks, LC filters, tank circuits, hybrids, transformers, attenuators and power dividers. In most cases, the design of precise component values and high Q-factors for the inductors and capacitors is necessary, which is a difficult task for integrated components on silicon. General design aspects of passive components with their facilities and restrictions to improve their high frequency behaviour and quality factors are described. In particular, the impact of different substrate resistivities on their performance is pointed out. Test structures on substrates with resistivities of 15 /spl Omega/cm, 2000 /spl Omega/cm and 20000 /spl Omega/cm were therefore manufactured.","PeriodicalId":315799,"journal":{"name":"Proceedings. 1998 International Conference on Multichip Modules and High Density Packaging (Cat. No.98EX154)","volume":"363 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114846984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Microwave multichip modules using low cost microwave chip on flex packaging technology 微波多芯片模块采用低成本微波芯片上的柔性封装技术
M. McNulty, J. Schnell, D. Nixon
{"title":"Microwave multichip modules using low cost microwave chip on flex packaging technology","authors":"M. McNulty, J. Schnell, D. Nixon","doi":"10.1109/ICMCM.1998.670791","DOIUrl":"https://doi.org/10.1109/ICMCM.1998.670791","url":null,"abstract":"Microwave chip on flex (MCOF) is an innovative, low cost extension of Lockheed Martin's high density interconnect (HDI) technology. In MCOF technology, die are attached face down on an adhesive backed pre-patterned polyimide dielectric and then overmolded with an epoxy encapsulant. Laser drilled vias followed by multilayer thin film metallization complete the circuit. Significant cost and weight advantages are attained by replacing traditional module substrates with an epoxy encapsulant. Transmit/receive (T/R) modules, thousands of which may be used in a solid state phased array radar application, are particularly good candidates for this technology. This paper describes the use of MCOF technology to package T/R modules for solid state radar applications. An overview of the MCOF process is first presented, followed by a review of the design and fabrication considerations for MCOF multichip modules. Specific attention is focused on the unique packaging and electrical performance requirements of T/R modules and how these objectives are met by MCOF technology. Finally, reliability considerations for use in military applications are discussed. Potential MCOF failure mechanisms and the MCOF reliability plan are presented.","PeriodicalId":315799,"journal":{"name":"Proceedings. 1998 International Conference on Multichip Modules and High Density Packaging (Cat. No.98EX154)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126450521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Study of RF flip-chip assembly with underfill epoxy 下填充环氧树脂的射频倒装芯片组装研究
W. Zhang, B. Su, Z. Feng, K. C. Gupta, Y.C. Lee
{"title":"Study of RF flip-chip assembly with underfill epoxy","authors":"W. Zhang, B. Su, Z. Feng, K. C. Gupta, Y.C. Lee","doi":"10.1109/ICMCM.1998.670754","DOIUrl":"https://doi.org/10.1109/ICMCM.1998.670754","url":null,"abstract":"Flip-chip assembly technology is becoming more and more important to radio frequency (RF) MCM with the following advantages: automated assembly, compact size, low cost, low crosstalk, and low insertion loss. However, flip-chip assembly also demands careful evaluation of solder joint reliability. For an assembly with a large MMIC chip or with a polymer substrate, underfill epoxy should be used to enhance the solder joint reliability. For a GaAs-on-Duraid flip-chip assembly with a chip size of 1.38 mm/spl times/4.7 mm, fatigue life could be increased from 1,300 to 11,000 cycles by the use of epoxy. Epoxy enhances solder reliability; however, it may affect electrical performance. Experimental studies have been conducted to measure the additional insertion loss resulting from the underfill epoxy. The additional loss is less than 1 dB, and it is acceptable for many RF applications.","PeriodicalId":315799,"journal":{"name":"Proceedings. 1998 International Conference on Multichip Modules and High Density Packaging (Cat. No.98EX154)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125790491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Replaceable chip module (RCM/sup TM/) 可更换芯片模块(RCM/sup TM/)
J. Rathburn
{"title":"Replaceable chip module (RCM/sup TM/)","authors":"J. Rathburn","doi":"10.1109/ICMCM.1998.670814","DOIUrl":"https://doi.org/10.1109/ICMCM.1998.670814","url":null,"abstract":"Gryphics, Inc. is developing a means of incorporating ICs into a very low cost replaceable chip module (RCM). This high density module accepts a wide variety of devices in many applications. Each device is interconnected by a very low inductance multi-mode compliance contact system, which is solderless and demateable. The loaded RCM can be used as a characterization, test, burn-in, and production system use interface, where all ICs or passive components remain unhandled, and in an actual use configuration. No additional test, burn-in or production socketing is required, with any faulty components removed and replaced without need for rework. Thermal management is also incorporated as required. A wide variety of configurations and interface formats are being developed, with applications including MCMs, memory modules, PCMCIA modules, connectors with integrated semiconductors, microprocessor/memory modules, sockets and interfaces, production level connectors, and multidirectional interconnects among others. The RCMs are low profile, high density packaged assemblies that can accept a mixture of typical packaged devices, discrete/passive devices, chip scale/flip chip devices, or bare die in some cases. Costly or low yield semiconductor devices are interconnected in a removable fashion via an organic, ceramic, or flex substrate without the temperatures required for solder flow. Simple removal and replacement of failed devices allows for great flexibility, upgrade options, and a reduction in the significance of known good die, with correlation between test and as-used performance.","PeriodicalId":315799,"journal":{"name":"Proceedings. 1998 International Conference on Multichip Modules and High Density Packaging (Cat. No.98EX154)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129975031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stress comparison of TBGA, MBGA, and ViperBGA/sup TM/ using the PAQC chip 使用PAQC芯片对TBGA、MBGA和ViperBGA/sup TM进行应力比较
T. Evans, W.T. Bright, E. A. Kenyon
{"title":"Stress comparison of TBGA, MBGA, and ViperBGA/sup TM/ using the PAQC chip","authors":"T. Evans, W.T. Bright, E. A. Kenyon","doi":"10.1109/ICMCM.1998.670815","DOIUrl":"https://doi.org/10.1109/ICMCM.1998.670815","url":null,"abstract":"A strain gauge on the PAQC (package assembly qualification & characterization) chip is used to make a comparison of mechanical stress over temperature between three different package types. The tape-ball grid array (tapeBGA), metalBGA, and ViperBGA/sup TM/ are assembled and stress tested as part of an ongoing reliability evaluation. Stress resistor values are sampled and compared, before production lots of each type are put through qualification testing. After qualification tests are completed, stress resistor values are sampled again and compared to the original data.","PeriodicalId":315799,"journal":{"name":"Proceedings. 1998 International Conference on Multichip Modules and High Density Packaging (Cat. No.98EX154)","volume":"26 Pt 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130683942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Characterization and processing of low dielectric constant thick film substrates for MCM-C modules MCM-C模块低介电常数厚膜衬底的表征与加工
D. Kellerman, D. J. Nabatian, P. Bokalo, Fengmei He, L. Retherford, A. Elshabini, F. Barlow
{"title":"Characterization and processing of low dielectric constant thick film substrates for MCM-C modules","authors":"D. Kellerman, D. J. Nabatian, P. Bokalo, Fengmei He, L. Retherford, A. Elshabini, F. Barlow","doi":"10.1109/ICMCM.1998.670780","DOIUrl":"https://doi.org/10.1109/ICMCM.1998.670780","url":null,"abstract":"The application of a new microsphere low K thick film material to large MCM-C substrates is discussed in this paper. Processing of large ceramic boards approximately 6.5/spl times/8.5 in/sup 2/ with 4 metal layers is described. Both screen printed and etched silver and gold metallizations are used for this work. The electrical, physical, and materials characterization of both silver and gold compatible multilayer low K dielectric material is detailed. High frequency characterization of the material is also discussed over a wide frequency bandwidth between 1-12 GHz.","PeriodicalId":315799,"journal":{"name":"Proceedings. 1998 International Conference on Multichip Modules and High Density Packaging (Cat. No.98EX154)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115535752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MCM-L requirements for an automotive electronic control unit application MCM-L要求的汽车电子控制单元应用
J. Joly, D. Lambert, J. Hunt
{"title":"MCM-L requirements for an automotive electronic control unit application","authors":"J. Joly, D. Lambert, J. Hunt","doi":"10.1109/ICMCM.1998.670837","DOIUrl":"https://doi.org/10.1109/ICMCM.1998.670837","url":null,"abstract":"MCMs offer an attractive alternative to packaged components to increase the packaging density and the reliability of electronic functions in a harsh environment, and decrease the overall cost. In the first part of this paper, we show the results of reliability tests carried out on test vehicles to select from the possible technological choices-high T/sub g/ FR4 vs. BT resin base substrate materials; wire bonding vs. flip chip processing for VLSI assembly on the MCM-L; and glob top encapsulation vs. metal lid die protection technology-to find the technologies which best fulfil automotive requirements for under the hood applications at a competitive cost. In the second part of the paper, we describe a functional MCM-L/ball grid array (BGA) electronic control unit (ECU) built with the materials and processes selected.","PeriodicalId":315799,"journal":{"name":"Proceedings. 1998 International Conference on Multichip Modules and High Density Packaging (Cat. No.98EX154)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128518119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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