MCM-C模块低介电常数厚膜衬底的表征与加工

Proceedings. 1998 International Conference on Multichip Modules and High Density Packaging (Cat. No.98EX154) Pub Date : 1998-04-15 DOI:10.1109/ICMCM.1998.670780

D. Kellerman, D. J. Nabatian, P. Bokalo, Fengmei He, L. Retherford, A. Elshabini, F. Barlow

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引用次数: 0

摘要

本文讨论了一种新型微球低K厚膜材料在大型MCM-C基板上的应用。描述了大约6.5/spl倍/8.5 in/sup 2/ 4金属层的大型陶瓷板的加工。丝网印刷和蚀刻银和金金属化用于这项工作。详细介绍了银和金兼容多层低K介电材料的电学、物理和材料特性。材料的高频特性也讨论了在1-12 GHz之间的宽频率带宽。

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Characterization and processing of low dielectric constant thick film substrates for MCM-C modules

The application of a new microsphere low K thick film material to large MCM-C substrates is discussed in this paper. Processing of large ceramic boards approximately 6.5/spl times/8.5 in/sup 2/ with 4 metal layers is described. Both screen printed and etched silver and gold metallizations are used for this work. The electrical, physical, and materials characterization of both silver and gold compatible multilayer low K dielectric material is detailed. High frequency characterization of the material is also discussed over a wide frequency bandwidth between 1-12 GHz.

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Proceedings. 1998 International Conference on Multichip Modules and High Density Packaging (Cat. No.98EX154)

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