Transcription solder bump technology using the evaporation method

K. Seyama, H. Yamamoto, K. Satou, H. Yoshimura, H. Ota, Y. Usui
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引用次数: 2

Abstract

We have developed a new transcription solder bump (TSB) technology using the evaporation method. We use this method in the current production of micro solder area array bump (/spl mu/SAB) formation with 153 /spl mu/m pitch and on chips with over 8000 bumps. In this method, transcription bumps are formed on a dummy wafer by evaporation using a metal mask. Temporary chips are made by dicing the dummy wafer with evaporated bumps, and then the bumps on the temporary chips are transcribed to real chips. This technology has a high accuracy in terms of bump height of less than 2 /spl mu/m, and bumping yield is greater than 99.99999% per bump. Also, we have developed a restoration technique for solder bumps with high yield and low cost.
采用蒸发法誊写焊料凹凸技术
我们利用蒸发法开发了一种新的转录焊凸(TSB)技术。我们将这种方法用于目前生产的具有153 /spl mu/m间距的微焊点区域阵列凸点(/spl mu/SAB)形成以及具有超过8000个凸点的芯片。在这种方法中,通过使用金属掩膜蒸发在假晶圆上形成转录凸起。临时晶片是在假晶片上切上蒸发掉的凸起物,然后将临时晶片上的凸起物转录成真正的晶片。该技术凸点高度精度高,凸点高度小于2 /spl mu/m,凸点产量大于99.99999%。此外,我们还开发了一种高收率、低成本的焊点修复技术。
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