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Application of real time in-situ interferometry for the observation of GaN/Si MOVPE growth process 实时原位干涉法在GaN/Si MOVPE生长过程观察中的应用
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-12-29 DOI: 10.1109/ASDAM.2014.6998650
T. Szymański, M. Wośko, B. Paszkiewicz, K. Indykiewicz, R. Paszkiewicz
{"title":"Application of real time in-situ interferometry for the observation of GaN/Si MOVPE growth process","authors":"T. Szymański, M. Wośko, B. Paszkiewicz, K. Indykiewicz, R. Paszkiewicz","doi":"10.1109/ASDAM.2014.6998650","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998650","url":null,"abstract":"In this paper the wide range of application of real time in situ reflectance signal observation based on four GaN on Si samples grown is shown. Mean reflectance value of oscillations for GaN growth and recovery times were extracted from reflectance traces acquired in situ. Moreover, RMS variation of grown samples were correlated with in situ monitoring that were in good agreement with presented model. We present what additional information can be extracted by in-situ interferometry.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134336321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Complex measurement of human physiology using designed miniature wireless sensors 使用设计的微型无线传感器进行人体生理的复杂测量
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-12-29 DOI: 10.1109/ASDAM.2014.6998692
E. Vavrinsky, D. Moskáľová, J. Mihálov, M. Donoval, M. Daricek, V. Stopjaková
{"title":"Complex measurement of human physiology using designed miniature wireless sensors","authors":"E. Vavrinsky, D. Moskáľová, J. Mihálov, M. Donoval, M. Daricek, V. Stopjaková","doi":"10.1109/ASDAM.2014.6998692","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998692","url":null,"abstract":"The paper deals with simultaneous psychological application of two biosensor probes developed by two research groups. The first biosensor “Biosense” measures human surface biopotentials (namely cardiac activity (ECG)) and physical activity (acceleration). The second sensor “EDA-ring” measures resistance of human skin, so called electro-dermal activity (EDA).","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133362304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of structure geometry and bulk traps on switching transients of InAlN/GaN HEMT 结构几何形状和体积陷阱对InAlN/GaN HEMT开关瞬态的影响
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-12-29 DOI: 10.1109/ASDAM.2014.6998669
J. Marek, A. Šatka, D. Donoval, M. Molnar, J. Priesol, A. Chvála, P. Pribytny
{"title":"Influence of structure geometry and bulk traps on switching transients of InAlN/GaN HEMT","authors":"J. Marek, A. Šatka, D. Donoval, M. Molnar, J. Priesol, A. Chvála, P. Pribytny","doi":"10.1109/ASDAM.2014.6998669","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998669","url":null,"abstract":"Impact of structure geometry and bulk traps on the performance of the n++GaN/InAlN/AlN/GaN high electron mobility transistor (HEMT) using two-dimensional Sentaurus TCAD simulation tool were investigated. Simulations were performed by the electrophysical models calibrated on real devices. The results indicate a significant influence of both acceptor and donor traps on device switching characteristics.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130133543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
AlN/GaN/AlN double heterostructures with thin AlN top barriers AlN/GaN/AlN双异质结构
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-12-29 DOI: 10.1109/ASDAM.2014.6998659
C. Zervos, A. Bairamis, A. Adikimenakis, A. Kostopoulos, M. Kayambaki, K. Tsagaraki, G. Konstantinidis, A. Georgakilas
{"title":"AlN/GaN/AlN double heterostructures with thin AlN top barriers","authors":"C. Zervos, A. Bairamis, A. Adikimenakis, A. Kostopoulos, M. Kayambaki, K. Tsagaraki, G. Konstantinidis, A. Georgakilas","doi":"10.1109/ASDAM.2014.6998659","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998659","url":null,"abstract":"AlN/GaN/AlN double heterostructures grown by PAMBE on sapphire (0001) substrates with different AlN top barrier thicknesses, ranging between 1.5 and 4 nm, were investigated. The two-dimensional electron gas (2DEG) density increased with AlN barrier thickness in agreement with the theoretical values. The highest value of 2.2×1013 cm-2 for the HEMT structure with 4.5 nm AlN barrier thickness and the highest mobility of 900 cm2/Vs for the structure with 3 nm AlN barrier thickness were obtained. HEMT devices, processed with a gate length of 1μm, exhibited a maximum drain current of 1.1 A/mm for 3 and 3.7 nm AlN barrier thickness. The transistor threshold voltage scaled linearly from +0.2V to-2.7V by varying the AlN barrier thickness from 1.5 nm to 4.5 nm respectively showing a normally-off potential use.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114335948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Novel GaN-based transistors using polarization engineering 基于极化工程的新型氮化镓晶体管
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-12-29 DOI: 10.1109/ASDAM.2014.6998656
A. Vescan, H. Hahn, B. Reuters, H. Kalisch
{"title":"Novel GaN-based transistors using polarization engineering","authors":"A. Vescan, H. Hahn, B. Reuters, H. Kalisch","doi":"10.1109/ASDAM.2014.6998656","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998656","url":null,"abstract":"For more than 20 years, the field of group III nitrides has been among the most exciting ones in solid-state device research. During this time, significant progress has been obtained not only from a technological point of view, but also and more importantly in terms of understanding these materials and their very specific properties.This paper gives a summary on our results on the growth of heterostructures based on quaternary barriers, the compositional control and the implications on crystal and electrical properties. The additional degree of freedom acquired by this capability is applied to a variety of device designs such as normally-off or high-ns structures with excellent transport properties. Finally, the formation of polarization-induced two-dimensional hole gases (2DHGs) in inverted heterostructures is demonstrated.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128801979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
GaN HEMTs on Si substrate with high cutoff frequency 具有高截止频率的硅衬底GaN hemt
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-12-29 DOI: 10.1109/ASDAM.2014.6998660
W. Jatal, K. Tonisch, U. Baumann, F. Schwierz, J. Pezoldt
{"title":"GaN HEMTs on Si substrate with high cutoff frequency","authors":"W. Jatal, K. Tonisch, U. Baumann, F. Schwierz, J. Pezoldt","doi":"10.1109/ASDAM.2014.6998660","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998660","url":null,"abstract":"We report on GaN HEMTs on Si substrates with high cutoff frequency and low contact resistance. HEMTs with two barriers designs and two source/drain metallization schemes have been fabricated and characterized. Our 100-nm gate transistors show a maximum drain current density of 1.4 A/mm and a peak transconductance of 427 mS/mm. The fastet transistors have a gate length of 80 nm and achieve a cutoff frequency fT of 180 GHz. This is the best fT performance reported for GaN HEMTs on Si reported so far and rivals the fastest GaN HEMTs on SiC with comparable gate length.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121593718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Detailed optical and electrical characterisation of green — Orange InGaN/GaN LEDs grown by MOVPE 由MOVPE生长的绿橙色InGaN/GaN led的详细光学和电学特性
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-12-29 DOI: 10.1109/ASDAM.2014.6998708
K. Cavanagh, C. Liu, T. Martin, M. Hopkins, S. Sivaraya, D. Allsopp
{"title":"Detailed optical and electrical characterisation of green — Orange InGaN/GaN LEDs grown by MOVPE","authors":"K. Cavanagh, C. Liu, T. Martin, M. Hopkins, S. Sivaraya, D. Allsopp","doi":"10.1109/ASDAM.2014.6998708","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998708","url":null,"abstract":"Green - orange light emitting diodes of were fabricated from InGaN/GaN wafers grown by MOVPE. Detailed measurements of the current and spectral dependence of their electroluminescence were made under low noise DC and pulsed conditions. The results revealed that low electrical to optical power conversion efficiency correlates with degrade current-voltage characteristics.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117043891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of low loss 1×64 y-branch splitter having symmetric splitting ratio and small footprint 低损耗1×64分路器设计，分路比对称，占地面积小
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-12-29 DOI: 10.1109/ASDAM.2014.6998686
C. Burtscher, D. Seyringer, F. Uherek, J. Chovan, A. Kuzma
{"title":"Design of low loss 1×64 y-branch splitter having symmetric splitting ratio and small footprint","authors":"C. Burtscher, D. Seyringer, F. Uherek, J. Chovan, A. Kuzma","doi":"10.1109/ASDAM.2014.6998686","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998686","url":null,"abstract":"We present the design and simulation of low loss 1 × 64 Y-branch optical splitter having the symmetric splitting ratio and small footprint. This was reached by optimizing the used waveguide structure that eliminates the presence of the first mode, causing the asymmetric splitting ratio of the split power over all the output waveguides. This way we were able to reduce the length of the splitter to nearly one third of its original designed value.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133326272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
M/Si-GaAs/M diode: Role of the metal contact in electrical transport, a-particle and photon detection M/Si-GaAs/M二极管:金属接触在电输运、a粒子和光子探测中的作用
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-12-29 DOI: 10.1109/ASDAM.2014.6998643
F. Dubecký, B. Zat’ko, G. Vanko, P. Hubík, J. Oswald, D. Kindl, E. Gombia, J. Kováč, A. Šagátová, V. Nečas
{"title":"M/Si-GaAs/M diode: Role of the metal contact in electrical transport, a-particle and photon detection","authors":"F. Dubecký, B. Zat’ko, G. Vanko, P. Hubík, J. Oswald, D. Kindl, E. Gombia, J. Kováč, A. Šagátová, V. Nečas","doi":"10.1109/ASDAM.2014.6998643","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998643","url":null,"abstract":"M/Semi-insulating (SI) GaAs/M diodes with novel Mg-based metallization are investigated using current-voltage measurement, α-particle and photon detection. An anomalous decrease of the reverse current and peculiar photon spectra has been observed with such contact explainable by a strong electron accumulation due to the creation of a quasi-degenerate region at the Mg/SI-GaAs interface.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125719481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaN transistor reliability and instabilities GaN晶体管的可靠性和不稳定性
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-12-29 DOI: 10.1109/ASDAM.2014.6998665
M. Uren, Martin Kuball
{"title":"GaN transistor reliability and instabilities","authors":"M. Uren, Martin Kuball","doi":"10.1109/ASDAM.2014.6998665","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998665","url":null,"abstract":"GaN based transistors are vulnerable to long time period instabilities as a result of the wide bandgap. In this paper we review the effect of the bulk GaN dopants, which are added to ensure a highly resistive buffer, on the current-collapse which occurs on switching from the off-state to the on-state. The iron doping frequently used in RF devices leads to a trap level in the upper half of the gap which generates a small, reproducible, and straightforwardly modelled current-collapse. On the other hand the carbon doping used in many power devices results in current-collapse which can be large but is strongly impacted by the presence of leaky threading dislocations. A powerful technique to characterise the buffer and extract the vertical leakage in the different layers within a GaN-n-Si power HEMT based on ramping the substrate bias is introduced.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132775101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
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