实时原位干涉法在GaN/Si MOVPE生长过程观察中的应用

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-12-29 DOI:10.1109/ASDAM.2014.6998650

T. Szymański, M. Wośko, B. Paszkiewicz, K. Indykiewicz, R. Paszkiewicz

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引用次数: 0

摘要

本文展示了基于四氮化镓生长在硅上的实时原位反射信号观测的广泛应用。从原位获得的反射轨迹中提取GaN生长和恢复时间的振荡平均反射率值。此外，生长样品的均方根值变化与原位监测相关，与所提出的模型吻合良好。我们提出了通过原位干涉测量可以提取的附加信息。

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Application of real time in-situ interferometry for the observation of GaN/Si MOVPE growth process

In this paper the wide range of application of real time in situ reflectance signal observation based on four GaN on Si samples grown is shown. Mean reflectance value of oscillations for GaN growth and recovery times were extracted from reflectance traces acquired in situ. Moreover, RMS variation of grown samples were correlated with in situ monitoring that were in good agreement with presented model. We present what additional information can be extracted by in-situ interferometry.

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The Tenth International Conference on Advanced Semiconductor Devices and Microsystems

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