由MOVPE生长的绿橙色InGaN/GaN led的详细光学和电学特性

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-12-29 DOI:10.1109/ASDAM.2014.6998708

K. Cavanagh, C. Liu, T. Martin, M. Hopkins, S. Sivaraya, D. Allsopp

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引用次数: 0

摘要

以MOVPE生长的InGaN/GaN晶圆为原料，制备了绿橙色发光二极管。在低噪声直流和脉冲条件下，详细测量了其电致发光的电流和光谱依赖性。结果表明，低电光功率转换效率与降低的电流电压特性有关。

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Detailed optical and electrical characterisation of green — Orange InGaN/GaN LEDs grown by MOVPE

Green - orange light emitting diodes of were fabricated from InGaN/GaN wafers grown by MOVPE. Detailed measurements of the current and spectral dependence of their electroluminescence were made under low noise DC and pulsed conditions. The results revealed that low electrical to optical power conversion efficiency correlates with degrade current-voltage characteristics.

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The Tenth International Conference on Advanced Semiconductor Devices and Microsystems

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