{"title":"GaN晶体管的可靠性和不稳定性","authors":"M. Uren, Martin Kuball","doi":"10.1109/ASDAM.2014.6998665","DOIUrl":null,"url":null,"abstract":"GaN based transistors are vulnerable to long time period instabilities as a result of the wide bandgap. In this paper we review the effect of the bulk GaN dopants, which are added to ensure a highly resistive buffer, on the current-collapse which occurs on switching from the off-state to the on-state. The iron doping frequently used in RF devices leads to a trap level in the upper half of the gap which generates a small, reproducible, and straightforwardly modelled current-collapse. On the other hand the carbon doping used in many power devices results in current-collapse which can be large but is strongly impacted by the presence of leaky threading dislocations. A powerful technique to characterise the buffer and extract the vertical leakage in the different layers within a GaN-n-Si power HEMT based on ramping the substrate bias is introduced.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"GaN transistor reliability and instabilities\",\"authors\":\"M. Uren, Martin Kuball\",\"doi\":\"10.1109/ASDAM.2014.6998665\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaN based transistors are vulnerable to long time period instabilities as a result of the wide bandgap. In this paper we review the effect of the bulk GaN dopants, which are added to ensure a highly resistive buffer, on the current-collapse which occurs on switching from the off-state to the on-state. The iron doping frequently used in RF devices leads to a trap level in the upper half of the gap which generates a small, reproducible, and straightforwardly modelled current-collapse. On the other hand the carbon doping used in many power devices results in current-collapse which can be large but is strongly impacted by the presence of leaky threading dislocations. A powerful technique to characterise the buffer and extract the vertical leakage in the different layers within a GaN-n-Si power HEMT based on ramping the substrate bias is introduced.\",\"PeriodicalId\":313866,\"journal\":{\"name\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2014.6998665\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998665","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaN based transistors are vulnerable to long time period instabilities as a result of the wide bandgap. In this paper we review the effect of the bulk GaN dopants, which are added to ensure a highly resistive buffer, on the current-collapse which occurs on switching from the off-state to the on-state. The iron doping frequently used in RF devices leads to a trap level in the upper half of the gap which generates a small, reproducible, and straightforwardly modelled current-collapse. On the other hand the carbon doping used in many power devices results in current-collapse which can be large but is strongly impacted by the presence of leaky threading dislocations. A powerful technique to characterise the buffer and extract the vertical leakage in the different layers within a GaN-n-Si power HEMT based on ramping the substrate bias is introduced.