W. Jatal, K. Tonisch, U. Baumann, F. Schwierz, J. Pezoldt
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引用次数: 1
摘要
我们报道了在Si衬底上具有高截止频率和低接触电阻的GaN hemt。制备了具有两种阻挡层设计和两种源/漏金属化方案的hemt并对其进行了表征。我们的100纳米栅极晶体管的最大漏极电流密度为1.4 a /mm,峰值跨导为427 mS/mm。最快的晶体管栅极长度为80nm,截止频率为180ghz。这是迄今为止报道的硅基GaN hemt的最佳fT性能,与栅极长度相当的SiC上最快的GaN hemt相媲美。
GaN HEMTs on Si substrate with high cutoff frequency
We report on GaN HEMTs on Si substrates with high cutoff frequency and low contact resistance. HEMTs with two barriers designs and two source/drain metallization schemes have been fabricated and characterized. Our 100-nm gate transistors show a maximum drain current density of 1.4 A/mm and a peak transconductance of 427 mS/mm. The fastet transistors have a gate length of 80 nm and achieve a cutoff frequency fT of 180 GHz. This is the best fT performance reported for GaN HEMTs on Si reported so far and rivals the fastest GaN HEMTs on SiC with comparable gate length.