J. Marek, A. Šatka, D. Donoval, M. Molnar, J. Priesol, A. Chvála, P. Pribytny
{"title":"结构几何形状和体积陷阱对InAlN/GaN HEMT开关瞬态的影响","authors":"J. Marek, A. Šatka, D. Donoval, M. Molnar, J. Priesol, A. Chvála, P. Pribytny","doi":"10.1109/ASDAM.2014.6998669","DOIUrl":null,"url":null,"abstract":"Impact of structure geometry and bulk traps on the performance of the n++GaN/InAlN/AlN/GaN high electron mobility transistor (HEMT) using two-dimensional Sentaurus TCAD simulation tool were investigated. Simulations were performed by the electrophysical models calibrated on real devices. The results indicate a significant influence of both acceptor and donor traps on device switching characteristics.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Influence of structure geometry and bulk traps on switching transients of InAlN/GaN HEMT\",\"authors\":\"J. Marek, A. Šatka, D. Donoval, M. Molnar, J. Priesol, A. Chvála, P. Pribytny\",\"doi\":\"10.1109/ASDAM.2014.6998669\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Impact of structure geometry and bulk traps on the performance of the n++GaN/InAlN/AlN/GaN high electron mobility transistor (HEMT) using two-dimensional Sentaurus TCAD simulation tool were investigated. Simulations were performed by the electrophysical models calibrated on real devices. The results indicate a significant influence of both acceptor and donor traps on device switching characteristics.\",\"PeriodicalId\":313866,\"journal\":{\"name\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2014.6998669\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998669","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of structure geometry and bulk traps on switching transients of InAlN/GaN HEMT
Impact of structure geometry and bulk traps on the performance of the n++GaN/InAlN/AlN/GaN high electron mobility transistor (HEMT) using two-dimensional Sentaurus TCAD simulation tool were investigated. Simulations were performed by the electrophysical models calibrated on real devices. The results indicate a significant influence of both acceptor and donor traps on device switching characteristics.