F. Dubecký, B. Zat’ko, G. Vanko, P. Hubík, J. Oswald, D. Kindl, E. Gombia, J. Kováč, A. Šagátová, V. Nečas
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引用次数: 0
Abstract
M/Semi-insulating (SI) GaAs/M diodes with novel Mg-based metallization are investigated using current-voltage measurement, α-particle and photon detection. An anomalous decrease of the reverse current and peculiar photon spectra has been observed with such contact explainable by a strong electron accumulation due to the creation of a quasi-degenerate region at the Mg/SI-GaAs interface.