{"title":"Area Efficient High-voltage Charge Pump for Double Backplate MEMS Microphone","authors":"L. Zou, Tomasz Hanzlik, Gino Rocca","doi":"10.23919/MIXDES.2019.8787044","DOIUrl":"https://doi.org/10.23919/MIXDES.2019.8787044","url":null,"abstract":"Silicon MEMS microphones show competitive advantages to portable consumer electronics with tiny device size, high sound quality, reliability and affordability. The application of MEMS analog/digital microphones can now be found in smart phones, hearing aids, tablets, and automotive voice recognition systems. A double backplate (DB) MEMS transducer brings higher sensitivity and lower distortion compared to a single backplate MEMS. In this paper, we first show an attractive DB MEMS analog microphone where two sufficiently high positive DC voltages are required to bias top and bottom backplates, respectively. As a solution, a fully integrated dual-output high-voltage (HV) positive charge pump is proposed, and the layout area saving is about 40%. To verify the design, an analog readout ASIC is fabricated in a standard 0.18 um CMOS process, and the ASIC includes the proposed HV charge pump, clock generation, and other circuit blocks. In silicon validation, two voltages 12.42 V and 12.40 V with no ripples are generated successfully, and the settling time is well within 5 mS. The two voltages can be perfectly applied to the DB MEMS.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121737604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Minimization of SM-Covers of Petri Net Specifications of Control Systems","authors":"A. Karatkevich, Lukasz Stefanowicz","doi":"10.23919/MIXDES.2019.8787097","DOIUrl":"https://doi.org/10.23919/MIXDES.2019.8787097","url":null,"abstract":"Some methods of implementation of the concurrent systems require obtaining their cover with the sequential processes. There exists a range of algorithms generating such covers, which however may be redundant. The paper deals with this kind of redundancy in the context of Petri nets. The following task is considered: a Petri net is given, and a set of State Machine subnets covering the net is constructed; its minimum subset still covering the net has to be obtained. The task is solved using the hypergraph representation of the system. It is shown that in many cases the exact minimization can be obtained in polynomial time.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130806461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Kulis, Dong-xu Yang, Datao Ghong, J. Fonseca, S. Biereigel, J. Ye, P. Moreira
{"title":"A High-resolution, Wide-range, Radiation-hard Clock Phase-shifter in a 65 nm CMOS Technology","authors":"S. Kulis, Dong-xu Yang, Datao Ghong, J. Fonseca, S. Biereigel, J. Ye, P. Moreira","doi":"10.23919/MIXDES.2019.8787202","DOIUrl":"https://doi.org/10.23919/MIXDES.2019.8787202","url":null,"abstract":"The design and characterization results of a high-resolution phase-shifter are presented. The phase-shifter is designed with radiation hardening techniques and fabricated in 65 nm CMOS technology. The phase-shifter circuit can produce several output frequencies (40, 80, 160, 320, 640 or 1280 MHz) with an adjustable phase (48.4 ps resolution). It has been fully characterized displaying INL<0.61 LSB and DNL<0.44 LSB with the power consumption, depending on the output frequency, staying below 8 μW/MHz.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129201357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Zokaei, K. El-Sankary, Dmitry Trukhachev, A. Amirabadi
{"title":"A 130 nm CMOS Passive Mixer Utilizing Positive-Negative Feedback as the Input Transconductance","authors":"A. Zokaei, K. El-Sankary, Dmitry Trukhachev, A. Amirabadi","doi":"10.23919/MIXDES.2019.8787186","DOIUrl":"https://doi.org/10.23919/MIXDES.2019.8787186","url":null,"abstract":"This paper describes the design of a novel passive mixer which utilizes an input Gm stage which enhances the noise performance and also provides a reasonable linearity for the mixer. The mixer is a double balanced passive mixer which utilizes an opamp as the output transimpedance amplifier for the output stage. A class A opamp is designed to ensure the functionality of the circuit and providing the requisite gain at the output stage with a reasonable phase margin. The mixer is simulated in a 130 nm CMOS process. It has a conversion gain of more than 9 dB for more than 4 GHz bandwidth from 1-5 GHz, input referred noise of 2.5 nV/√ Hz and dissipates 8.28 mW of power.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130596129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Simple Ultra-Low Power Opamp in 22 nm FDSOI","authors":"W. Kuzmicz","doi":"10.23919/MIXDES.2019.8787017","DOIUrl":"https://doi.org/10.23919/MIXDES.2019.8787017","url":null,"abstract":"An ultra-low power opamp is described. The amplifier has been designed and prototyped in 22nm CMOS FDSOI technology. Very low current consumption (1.1 μA at VDD=0.8v) and very low area (0.0277 mm2) make it suitable for multichannel bio signal recording arrays. Noise efficiency factor of 3.3 has been achieved. A unique feature of this opamp architecture is a negative feedback loop from the output to the body of an input transistor, which serves as a second gate. This circuit technique, possible only in FDSOI technology, allows to achieve perfectly linear voltage transfer curve while leaving both signal inputs of the amplifier free.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134584990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Implementation of Addition and Subtraction Operations in Multiple Precision Arithmetic","authors":"K. Rudnicki, T. Stefański","doi":"10.23919/MIXDES.2019.8787156","DOIUrl":"https://doi.org/10.23919/MIXDES.2019.8787156","url":null,"abstract":"In this paper, we present a digital circuit of arithmetic unit implementing addition and subtraction operations in multiple-precision arithmetic (MPA). This adder-subtractor unit is a part of MPA coprocessor supporting and offloading the central processing unit (CPU) in computations requiring precision higher than 32/64 bits. Although addition and subtraction operations of two n-digit numbers require O(n) operations, the efficient implementation of these operations can provide valuable time-savings for the MPA coprocessor. Furthermore, MPA numbers are usually stored with the use of the sign-magnitude representation which is not so straightforward for addition/subtraction implementation as the two’s complement representation.Our adder-subtractor unit is implemented using the very high speed integrated circuit hardware description language (VHDL) and benchmarked on Xilinx Artix-7 FPGA. The developed digital circuit of the MPA adder-subtractor works with integer numbers of precision varying in the range between 64 bits and 32 kbits with the limb size set to 64 bits. It can currently work with the clock frequency exceeding 450 MHz. For the developed implementation, the addition of two k-limb numbers takes 33+k clock cycles. Hence, the developed coprocessor is 1.7 times faster than a single core of modern i7 processor for precision set to 32704 bits.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133608264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zaher Kakehbra, Morteza Mousazadeh, A. Khoei, A. Dadashi
{"title":"A Fast-Lock, Low Jitter, High-Speed Half-Rate CDR Architecture with a Composite Phase Detector (CPD)","authors":"Zaher Kakehbra, Morteza Mousazadeh, A. Khoei, A. Dadashi","doi":"10.23919/MIXDES.2019.8787120","DOIUrl":"https://doi.org/10.23919/MIXDES.2019.8787120","url":null,"abstract":"A half-rate CDR architecture is presented which exploits an improved half-rate Linear Phase Detector (LPD) and a proposed half-rate Multi-Level Bang Bang PD (MLBBPD) incorporated in a Composite PD (CPD) to benefit the advantages of both the MLBBPD and LPD such as fast locking and good jitter performance, respectively. The proposed half-rate LPD in contrast with a conventional counterpart generates the error and reference signals with the equivalent pulse width, thus obviating to employ asymmetric charge pump, also relaxes the speed requirement of other related circuits. Finally, its systematic phase offset is zero. During lock acquisition, the MLBBPD controls the CDR loop due to fast lock time. At locked state, the LPD establishes the loop owing to better jitter operation. Switching between the MLBBPD and LPD is performed through a proposed Lock Detector (LD). At the locked state, if the phase difference between the data and the clock be greater than 45, the LD selects the MLBBPD to decrease it below 45, and again the LPD is selected. Simulations accomplished by Verilog-AMS model in HSPICE-RF simulator and the results confirm our statements.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123851743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Quang Chuc Nguyen, P. Tounsi, J. Fradin, J. Reynes
{"title":"Development of SiC MOSFET Electrical Model and Experimental Validation: Improvement and Reduction of Parameter Number","authors":"Quang Chuc Nguyen, P. Tounsi, J. Fradin, J. Reynes","doi":"10.23919/MIXDES.2019.8787050","DOIUrl":"https://doi.org/10.23919/MIXDES.2019.8787050","url":null,"abstract":"In this work, a new approach for electrical modeling of Silicon Carbide (SiC) MOSFET is presented. The developed model is inspired from the Curtice model which is using a mathematic function reflecting MOSFET output characteristics. The first simulation results showed good agreement with measurements. Improvement is needed in order to increase model accuracy and to take into account the influence of the junction temperature on device characteristics.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129742916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Low Power Design From Moore to AI for nm Era : Invited Paper","authors":"R. Joshi, M. Ziegler","doi":"10.23919/MIXDES.2019.8787172","DOIUrl":"https://doi.org/10.23919/MIXDES.2019.8787172","url":null,"abstract":"This paper reviews key developments and the continuation of low power techniques needed from the Moore to AI eras. SRAM with a wider range of operation, from extreme low to high voltages, is enabled using novel circuit techniques and demonstrated for edge or data centric accelerators. These techniques exploit interconnect as well as inductor and capacitor coupling for boosting on demand. Several chips fabricated in 14nm SOI technology show functional 8T SRAM down to 0.24V–0.30V These new techniques can lead to lower voltage operation of cognitive and neural network for IoT and data centric applications.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116900783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}