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2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems"最新文献

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A Dual Feedback Wideband Differential Low Noise Amplifier inl30 nm CMOS Process 30nm CMOS工艺双反馈宽带差分低噪声放大器
2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems" Pub Date : 2019-06-01 DOI: 10.23919/MIXDES.2019.8787055
A. Zokaei, K. El-Sankary, Dmitry Trukhachev, A. Amirabadi
{"title":"A Dual Feedback Wideband Differential Low Noise Amplifier inl30 nm CMOS Process","authors":"A. Zokaei, K. El-Sankary, Dmitry Trukhachev, A. Amirabadi","doi":"10.23919/MIXDES.2019.8787055","DOIUrl":"https://doi.org/10.23919/MIXDES.2019.8787055","url":null,"abstract":"In this paper a fully differential wideband Low Noise Amplifier (LNA) is presented which utilizes positive-negative feedback to achieve a high gain and low noise performance. CG-CS structure is used as a negative feedback while the positive feedback is due to the other differential side connection. Based on this idea, the LNA overcomes the trade-off between power and noise matching without degrading the stability. The LNA is supposed to cover approximately 2.5 GHz bandwidth from about 3.5~6 GHz. It has a maximum power gain of about 13.5 dB, input return loss (S11) of less than -10 dB and a minimum Noise Figure (NF) of about 3.5 dB. The layout of the LNA consumes about 1.001 μm2 of chip area and it dissipates 16mW.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"321 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114098881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multiconductor Transmission Line System with Stochastically Affected Boundary Conditions 具有随机影响边界条件的多导体传输线系统
2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems" Pub Date : 2019-06-01 DOI: 10.23919/MIXDES.2019.8787203
L. Brancík, E. Kolárová
{"title":"Multiconductor Transmission Line System with Stochastically Affected Boundary Conditions","authors":"L. Brancík, E. Kolárová","doi":"10.23919/MIXDES.2019.8787203","DOIUrl":"https://doi.org/10.23919/MIXDES.2019.8787203","url":null,"abstract":"The paper deals with the application of stochastic differential-algehraic equation (SDAE) approach to evaluate responses of multiconductor transmission lines (MTL) with stochastically affected boundary conditions. Respective SDAEs are formulated by a modified nodal analysis (MNA) to describe lumped-parameter circuit terminating the MTL and defining the boundary conditions. These can be under stochastic affects by considering internal non-deterministic independent sources. Because of the MTL itself is described by the telegraph partial differential equations (PDE), which will be solved via an implicit Wendroff numerical scheme, the MNA SDAE will be solved via a compatible implicit Euler scheme in its stochastic version after completing the deterministic DAE with an additive noise. The MTL’s responses are presented in the form of sets of individual stochastic trajectories postprocessed and completed with sample means and confidence intervals. The results were compared with those based on the MTL lumped-parameter model formed by generalized RLCG T-cells in cascade. All the simulations have been done in Matlab.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114599514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigations of lnfluence of Properties of PCB on Thermal and Optical Parameters of the LED Module PCB性能对LED模组热光学参数影响的研究
2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems" Pub Date : 2019-06-01 DOI: 10.23919/MIXDES.2019.8787170
K. Górecki, Przemysław Ptak
{"title":"Investigations of lnfluence of Properties of PCB on Thermal and Optical Parameters of the LED Module","authors":"K. Górecki, Przemysław Ptak","doi":"10.23919/MIXDES.2019.8787170","DOIUrl":"https://doi.org/10.23919/MIXDES.2019.8787170","url":null,"abstract":"In the paper the problem of an influence of properties of PCB on thermal and optical parameters of LED modules is considered. For some LED modules with the same project of mosaic made in PCB characterized by different parameters values, thermal and optical parameters are measured. The used measurement method is described and obtained results of measurements are presented and discussed. Some suggestions for designers of LED modules are formulated.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"255 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115281690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose 封闭栅mosfet的正向和反向工作及对高总电离剂量的敏感性
2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems" Pub Date : 2019-06-01 DOI: 10.23919/MIXDES.2019.8787098
Aristeidis Nikolaou, Loukas Chevas, A. Papadopoulou, N. Makris, M. Bucher, G. Borghello, F. Faccio
{"title":"Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose","authors":"Aristeidis Nikolaou, Loukas Chevas, A. Papadopoulou, N. Makris, M. Bucher, G. Borghello, F. Faccio","doi":"10.23919/MIXDES.2019.8787098","DOIUrl":"https://doi.org/10.23919/MIXDES.2019.8787098","url":null,"abstract":"Frond-end electronics at the High Luminosity-Large Hadron Collider (HL-LHC) at CERN, will be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm Bulk CMOS process, is considered to be a viable solution in order to suppress performance degradation effects that occur after high TID exposure. The present paper presents a detailed analysis of the functionality of EG MOSFETs operating under high TID, taking into accountspecific layout characteristics.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129892128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fractional Order Circuit Elements Derived from Electromagnetism 源自电磁学的分数阶电路元件
2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems" Pub Date : 2019-06-01 DOI: 10.23919/MIXDES.2019.8787119
T. Stefański, J. Gulgowski
{"title":"Fractional Order Circuit Elements Derived from Electromagnetism","authors":"T. Stefański, J. Gulgowski","doi":"10.23919/MIXDES.2019.8787119","DOIUrl":"https://doi.org/10.23919/MIXDES.2019.8787119","url":null,"abstract":"In this paper, derivations of fractional-order (FO) circuit-element equations from electromagnetism are presented. Whilst many papers are devoted to FO modelling of electrical circuits, there are no strong foundations for such an approach. Therefore, we investigate relations between the FO electromagnetism and the FO circuit theory. Our derivations start from quasi-static (QS) approximations of Maxwell’s equations in media with FO constitutive relations. Hence, FO lumped-element equations are derived which are supported by an approximate applicability condition. If the FO capacitor/inductor satisfies the derived condition, then the energy of the magnetic/electric field is negligible in comparison to the energy of the electric/magnetic field in the considered FO element. Then, we demonstrate that FO lumped-element parameters can be derived assuming the equality of electromagnetic power flowing into the circuit element and calculated as the current and voltage product.The obtained results support researchers and engineers employing FO modelling in electrical and electronics engineering.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130022109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
FOSS Compact Model Prototyping with Verilog-A Equation-Defined Devices (VAEDD) 使用Verilog-A方程定义器件(VAEDD)的自由/开源软件紧凑模型原型
2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems" Pub Date : 2019-06-01 DOI: 10.23919/MIXDES.2019.8787063
M. Brinson
{"title":"FOSS Compact Model Prototyping with Verilog-A Equation-Defined Devices (VAEDD)","authors":"M. Brinson","doi":"10.23919/MIXDES.2019.8787063","DOIUrl":"https://doi.org/10.23919/MIXDES.2019.8787063","url":null,"abstract":"Equation-Defined Device models (EDD) have become very popular for behavioural modelling of semiconductor and other non-linear devices. Two feature that makes them particularly attractive are their interactive nature and easy testing during the model development process. However, they are less suited for operation as production level models due to their slow simulation performance. This paper presents a new extension to the EDD that offers C++ model performance coupled with the convenience of EDD modelling. The extended form of the EDD is called a Verilog-A EDD or VAEDD for short. It has the same structure as the standard EDD but is built around compiled Verilog-A module code, which in turn is translated to C++ code and dynamically linked to the main body of the simulator code. Essentially a VAEDD is a tiny Verilog-A module with a standardised internal code structure. To demonstrate the interactive approach to compact model building with VAEDD components the design and testing of a high power SiC Schottky barrier diode is included in the main body of the text.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"16 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116428252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of an Energy-Efficient Current-to-Frequency Converter for a Wearable Sensor Platform 一种用于可穿戴传感器平台的节能电流-频率转换器的设计
2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems" Pub Date : 2019-06-01 DOI: 10.23919/MIXDES.2019.8787106
E. Voulgari, F. Krummenacher, M. Kayal
{"title":"Design of an Energy-Efficient Current-to-Frequency Converter for a Wearable Sensor Platform","authors":"E. Voulgari, F. Krummenacher, M. Kayal","doi":"10.23919/MIXDES.2019.8787106","DOIUrl":"https://doi.org/10.23919/MIXDES.2019.8787106","url":null,"abstract":"This paper presents the design of the ANTIGONE ASIC in AMS 0.35 μm technology that interfaces with ion-sensitive field effect transistors (ISFETs) to detect biomarkers like pH, Na+ and K+ in human sweat. The ISFET sensors generate a low current dc signal, so a current-to-frequency converter (CFC) architecture is used to measure the produced current of the different sensors in time multiplexing. The ASIC has to properly bias the ISFETs and send the digitized output signal to a microcontroller through an SPI interface. In the front-end, a switched capacitor circuit is used to balance the charge that is stored in the current integrator. The 12-bit converter is designed for low power consumption. The weak inversion region of operation is exploited to achieve the highest gain for the same power budget. The different analog blocks are following a power activation sequence in order to limit the power consumption during the idle states of the system.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132826370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Need of Simulation Methodologies for Active Semiconductor Devices in MEMS : Invited Paper MEMS中有源半导体器件仿真方法的需求:特邀论文
2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems" Pub Date : 2019-06-01 DOI: 10.23919/MIXDES.2019.8787113
Mike Schwarz
{"title":"The Need of Simulation Methodologies for Active Semiconductor Devices in MEMS : Invited Paper","authors":"Mike Schwarz","doi":"10.23919/MIXDES.2019.8787113","DOIUrl":"https://doi.org/10.23919/MIXDES.2019.8787113","url":null,"abstract":"The demand of a development/design kit for micro electro mechanical systems (MEMS) is even more in focus than ever before. We present a design flow to ensure an integration of active semiconductor devices into micromechanical sensors. The flow considers cross coupling effects and limitations of the electrical active device and mechanical MEMS. An example of a typical MEMS development including mechanical constraints is given. The results are compared with fabricated devices in terms of accuracy and capability of the design flow. Additionally, the capability of capacitance prediction is offered in comparison with measurements. Finally, the realization of a fast analytical compact model for a Monte Carlo simulation methodology is presented which allows for comprehensive parameter studies and sensitivity analysis’s to identify the most critical process parameters onto the sensor device performance.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115009257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Application of Offset Trimming Circuit for Reducing the Impact of Parasitics in Capacitive Sensor Readout Circuit 偏置修整电路在电容式传感器读出电路中减小寄生影响的应用
2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems" Pub Date : 2019-06-01 DOI: 10.23919/MIXDES.2019.8787117
P. Zając, M. Jankowski, Piotr Amrozik, M. Szermer
{"title":"Application of Offset Trimming Circuit for Reducing the Impact of Parasitics in Capacitive Sensor Readout Circuit","authors":"P. Zając, M. Jankowski, Piotr Amrozik, M. Szermer","doi":"10.23919/MIXDES.2019.8787117","DOIUrl":"https://doi.org/10.23919/MIXDES.2019.8787117","url":null,"abstract":"After the manufacturing process of a differential capacitive MEMS sensor, a capacitance mismatch may occur, which may result in the unwanted offset in the output voltage. In this paper, we present the design of an offset trimming circuit which allows reducing this offset. The designed circuit can successfully compensate the mismatch of over 10% of the total MEMS capacitance. The novel contribution of the paper is the detailed analysis of how the offset trimming circuit can be used to mitigate the impact of parasitics. It is shown that the circuit can help reducing the voltage offset caused by parasitic capacitances due to the chip pads or those induced by the chip layout.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123429771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Testing and Reliability 测试与可靠性
2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems" Pub Date : 2019-06-01 DOI: 10.23919/mixdes.2019.8787027
{"title":"Testing and Reliability","authors":"","doi":"10.23919/mixdes.2019.8787027","DOIUrl":"https://doi.org/10.23919/mixdes.2019.8787027","url":null,"abstract":"","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124824178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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