封闭栅mosfet的正向和反向工作及对高总电离剂量的敏感性

2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems" Pub Date : 2019-06-01 DOI:10.23919/MIXDES.2019.8787098

Aristeidis Nikolaou, Loukas Chevas, A. Papadopoulou, N. Makris, M. Bucher, G. Borghello, F. Faccio

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引用次数: 0

摘要

欧洲核子研究中心(CERN)的高亮度大型强子对撞机(HL-LHC)的前端电子设备将暴露在10倍的辐射剂量下。使用65nm Bulk CMOS工艺的封闭栅(EG) mosfet被认为是抑制高TID暴露后发生的性能下降效应的可行解决方案。本文详细分析了在高TID下工作的EG mosfet的功能，并考虑了特定的布局特性。

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Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose

Frond-end electronics at the High Luminosity-Large Hadron Collider (HL-LHC) at CERN, will be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm Bulk CMOS process, is considered to be a viable solution in order to suppress performance degradation effects that occur after high TID exposure. The present paper presents a detailed analysis of the functionality of EG MOSFETs operating under high TID, taking into accountspecific layout characteristics.

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2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems"

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