30nm CMOS工艺双反馈宽带差分低噪声放大器

2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems" Pub Date : 2019-06-01 DOI:10.23919/MIXDES.2019.8787055

A. Zokaei, K. El-Sankary, Dmitry Trukhachev, A. Amirabadi

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引用次数: 0

摘要

本文提出了一种利用正负反馈实现高增益、低噪声的全差分宽带低噪声放大器。使用CG-CS结构作为负反馈，而正反馈是由于另一个差分侧连接。基于这一思想，LNA在不降低稳定性的情况下克服了功率和噪声匹配之间的权衡。LNA应该覆盖大约3.5~6 GHz的大约2.5 GHz带宽。它的最大功率增益约为13.5 dB，输入回波损耗(S11)小于-10 dB，最小噪声系数(NF)约为3.5 dB。LNA的布局占用约1.001 μm2的芯片面积，功耗为16mW。

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A Dual Feedback Wideband Differential Low Noise Amplifier inl30 nm CMOS Process

In this paper a fully differential wideband Low Noise Amplifier (LNA) is presented which utilizes positive-negative feedback to achieve a high gain and low noise performance. CG-CS structure is used as a negative feedback while the positive feedback is due to the other differential side connection. Based on this idea, the LNA overcomes the trade-off between power and noise matching without degrading the stability. The LNA is supposed to cover approximately 2.5 GHz bandwidth from about 3.5~6 GHz. It has a maximum power gain of about 13.5 dB, input return loss (S11) of less than -10 dB and a minimum Noise Figure (NF) of about 3.5 dB. The layout of the LNA consumes about 1.001 μm2 of chip area and it dissipates 16mW.

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2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems"

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