SiC MOSFET电学模型的建立与实验验证:参数数的改进与减少

2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems" Pub Date : 2019-06-01 DOI:10.23919/MIXDES.2019.8787050

Quang Chuc Nguyen, P. Tounsi, J. Fradin, J. Reynes

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引用次数: 0

摘要

本文提出了一种新的碳化硅(SiC) MOSFET电建模方法。该模型是受Curtice模型的启发，采用数学函数来反映MOSFET的输出特性。初步仿真结果与实测结果吻合较好。为了提高模型精度并考虑结温对器件特性的影响，需要进行改进。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Development of SiC MOSFET Electrical Model and Experimental Validation: Improvement and Reduction of Parameter Number

In this work, a new approach for electrical modeling of Silicon Carbide (SiC) MOSFET is presented. The developed model is inspired from the Curtice model which is using a mathematic function reflecting MOSFET output characteristics. The first simulation results showed good agreement with measurements. Improvement is needed in order to increase model accuracy and to take into account the influence of the junction temperature on device characteristics.

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来源期刊

2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems"

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