双背板MEMS麦克风区域高效高压充电泵

L. Zou, Tomasz Hanzlik, Gino Rocca
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引用次数: 1

摘要

硅MEMS麦克风具有小巧的设备尺寸,高音质,可靠性和可负担性,在便携式消费电子产品中具有竞争优势。MEMS模拟/数字麦克风的应用现在可以在智能手机,助听器,平板电脑和汽车语音识别系统中找到。与单背板MEMS相比,双背板MEMS传感器具有更高的灵敏度和更低的失真。在本文中,我们首先展示了一个有吸引力的DB MEMS模拟麦克风,其中需要两个足够高的正直流电压来分别偏置顶部和底部背板。作为解决方案,提出了一种全集成双输出高压正电荷泵,可节省布局面积约40%。为了验证该设计,在标准的0.18 um CMOS工艺中制造了一个模拟读出ASIC,该ASIC包括所提出的高压电荷泵,时钟生成和其他电路块。在硅验证中,成功地产生了12.42 V和12.40 V两个无波纹电压,且稳定时间在5 ms以内,这两个电压可以很好地应用于DB MEMS。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Area Efficient High-voltage Charge Pump for Double Backplate MEMS Microphone
Silicon MEMS microphones show competitive advantages to portable consumer electronics with tiny device size, high sound quality, reliability and affordability. The application of MEMS analog/digital microphones can now be found in smart phones, hearing aids, tablets, and automotive voice recognition systems. A double backplate (DB) MEMS transducer brings higher sensitivity and lower distortion compared to a single backplate MEMS. In this paper, we first show an attractive DB MEMS analog microphone where two sufficiently high positive DC voltages are required to bias top and bottom backplates, respectively. As a solution, a fully integrated dual-output high-voltage (HV) positive charge pump is proposed, and the layout area saving is about 40%. To verify the design, an analog readout ASIC is fabricated in a standard 0.18 um CMOS process, and the ASIC includes the proposed HV charge pump, clock generation, and other circuit blocks. In silicon validation, two voltages 12.42 V and 12.40 V with no ripples are generated successfully, and the settling time is well within 5 mS. The two voltages can be perfectly applied to the DB MEMS.
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