{"title":"A Simple Ultra-Low Power Opamp in 22 nm FDSOI","authors":"W. Kuzmicz","doi":"10.23919/MIXDES.2019.8787017","DOIUrl":null,"url":null,"abstract":"An ultra-low power opamp is described. The amplifier has been designed and prototyped in 22nm CMOS FDSOI technology. Very low current consumption (1.1 μA at VDD=0.8v) and very low area (0.0277 mm2) make it suitable for multichannel bio signal recording arrays. Noise efficiency factor of 3.3 has been achieved. A unique feature of this opamp architecture is a negative feedback loop from the output to the body of an input transistor, which serves as a second gate. This circuit technique, possible only in FDSOI technology, allows to achieve perfectly linear voltage transfer curve while leaving both signal inputs of the amplifier free.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/MIXDES.2019.8787017","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
An ultra-low power opamp is described. The amplifier has been designed and prototyped in 22nm CMOS FDSOI technology. Very low current consumption (1.1 μA at VDD=0.8v) and very low area (0.0277 mm2) make it suitable for multichannel bio signal recording arrays. Noise efficiency factor of 3.3 has been achieved. A unique feature of this opamp architecture is a negative feedback loop from the output to the body of an input transistor, which serves as a second gate. This circuit technique, possible only in FDSOI technology, allows to achieve perfectly linear voltage transfer curve while leaving both signal inputs of the amplifier free.