A Simple Ultra-Low Power Opamp in 22 nm FDSOI

W. Kuzmicz
{"title":"A Simple Ultra-Low Power Opamp in 22 nm FDSOI","authors":"W. Kuzmicz","doi":"10.23919/MIXDES.2019.8787017","DOIUrl":null,"url":null,"abstract":"An ultra-low power opamp is described. The amplifier has been designed and prototyped in 22nm CMOS FDSOI technology. Very low current consumption (1.1 μA at VDD=0.8v) and very low area (0.0277 mm2) make it suitable for multichannel bio signal recording arrays. Noise efficiency factor of 3.3 has been achieved. A unique feature of this opamp architecture is a negative feedback loop from the output to the body of an input transistor, which serves as a second gate. This circuit technique, possible only in FDSOI technology, allows to achieve perfectly linear voltage transfer curve while leaving both signal inputs of the amplifier free.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/MIXDES.2019.8787017","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

An ultra-low power opamp is described. The amplifier has been designed and prototyped in 22nm CMOS FDSOI technology. Very low current consumption (1.1 μA at VDD=0.8v) and very low area (0.0277 mm2) make it suitable for multichannel bio signal recording arrays. Noise efficiency factor of 3.3 has been achieved. A unique feature of this opamp architecture is a negative feedback loop from the output to the body of an input transistor, which serves as a second gate. This circuit technique, possible only in FDSOI technology, allows to achieve perfectly linear voltage transfer curve while leaving both signal inputs of the amplifier free.
一种简单的22纳米FDSOI超低功耗运放
介绍了一种超低功耗运放。该放大器采用22nm CMOS FDSOI技术设计和原型。极低的电流消耗(VDD=0.8v时为1.1 μA)和极低的面积(0.0277 mm2)使其适用于多通道生物信号记录阵列。噪声效率系数达到3.3。这种运放架构的一个独特之处在于从输出到输入晶体管主体的负反馈回路,它充当第二个栅极。这种电路技术,可能只在FDSOI技术中,允许实现完美的线性电压传递曲线,同时使放大器的两个信号输入自由。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信