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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs最新文献

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First study on superjunction high-voltage transistors with n-columns formed by proton implantation and annealing 首次研究了质子注入和退火形成的n列超结高压晶体管
2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI: 10.1109/WCT.2004.239901
M. Rub, M. Bar, F. Niedernostheide, M. Schmitt, H. Schulze, A. Willmeroth
{"title":"First study on superjunction high-voltage transistors with n-columns formed by proton implantation and annealing","authors":"M. Rub, M. Bar, F. Niedernostheide, M. Schmitt, H. Schulze, A. Willmeroth","doi":"10.1109/WCT.2004.239901","DOIUrl":"https://doi.org/10.1109/WCT.2004.239901","url":null,"abstract":"For the first time, we present experimental results on high-voltage superjunction transistors based on the formation of hydrogen-related donor formation. Experiments were carried out using test devices with conventionally built up deep (/spl ap/ 40 /spl mu/m) p-doped columns, embedded in weakly doped epitaxial silicon. After hydrogen implantation with energies up to 1.9 MeV, subsequent annealing was performed at temperatures up to 500/spl deg/C. First test devices were able to block voltages up to 490 V with R/sub on//spl times/A values less than 5-6 /spl Omega/mm/sup 2/. Reverse current densities are usually less than 10 /spl mu/A/cm/sup 2/ at 25/spl deg/C.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128036262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
MiniSKiiP II - benchmark for 600V CIB modules minikiip II - 600V CIB模块的基准
2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI: 10.1109/WCT.2004.240031
R. Herzer, R. Popp, B. Koenig, K. Häupl
{"title":"MiniSKiiP II - benchmark for 600V CIB modules","authors":"R. Herzer, R. Popp, B. Koenig, K. Häupl","doi":"10.1109/WCT.2004.240031","DOIUrl":"https://doi.org/10.1109/WCT.2004.240031","url":null,"abstract":"MiniSKiiP II - a fully integrated and cost effective CIB module (converter+inverter+brake chopper) - is presented for 600 V solutions in the power range between 0.3 kW and 30 kW. The main features are significantly improved IGBTs, free wheeling diodes (FWD) and input rectifiers, a possible operation up to 175/spl deg/C, an improved thermal resistance, a new cover design, providing ample space for SMD components, and an extended power range.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"11 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113931914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Influence of trench etching on super junction devices fabricated by trench filling 沟槽刻蚀对沟槽填充法制备超级结器件的影响
2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI: 10.1109/WCT.2004.239904
S. Yamauchi, Y. Hattori, H. Yamaguchi
{"title":"Influence of trench etching on super junction devices fabricated by trench filling","authors":"S. Yamauchi, Y. Hattori, H. Yamaguchi","doi":"10.1109/WCT.2004.239904","DOIUrl":"https://doi.org/10.1109/WCT.2004.239904","url":null,"abstract":"We have proposed a fabrication method for super junction (SJ) diodes with low leakage current characteristics by using a wet anisotropic trench etching and Si(111) oriented trench epitaxial filling processes. The SJ diodes show electrical characteristics with a breakdown voltage of 225 V and a leakage current density below 1/spl times/10/sup -7/ A/cm/sup 2/. By experimental comparisons between three types of SJ diodes of the [111] oriented trench, formed by wet anisotropic etching, and [111] and [010] oriented trenches formed by the conventional reactive ion etching (RIE) process, we have clarified an effect of the wet etching process on the lower leakage characteristics of the trench filling SJ diode.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"111 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120833103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Effect of electron and helium irradiation on the high current density IV behaviour of Si power diodes-modelling and experiment 电子和氦辐照对硅功率二极管高电流密度IV行为的影响——模型与实验
2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI: 10.1109/WCT.2004.239973
M. Bakowski
{"title":"Effect of electron and helium irradiation on the high current density IV behaviour of Si power diodes-modelling and experiment","authors":"M. Bakowski","doi":"10.1109/WCT.2004.239973","DOIUrl":"https://doi.org/10.1109/WCT.2004.239973","url":null,"abstract":"The complex behaviour of the dynamic IV characteristics of electron and helium irradiated fast Si diodes, under surge current conditions, have been modelled successfully using an experimentally based model of the temperature dependence of trapping parameters of dominant recombination centers. A special care has been taken to determine the thermal boundary conditions at the contacts. The correctness of the thermal boundary conditions and of the model have been verified, comparing the measured failure limit (SOA) of the diodes irradiated with varying electron dose and combination of electrons and helium with the predicted SOA using the model of thermal instability, based on the thermal generation of the intrinsic carriers due to the self-heating.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"10501 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121385728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
System chips for automotive applications 汽车用系统芯片
2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI: 10.1109/WCT.2004.239808
A. Foletto, V. Poletto
{"title":"System chips for automotive applications","authors":"A. Foletto, V. Poletto","doi":"10.1109/WCT.2004.239808","DOIUrl":"https://doi.org/10.1109/WCT.2004.239808","url":null,"abstract":"Two examples of single chip system ICs for automotive applications are described. Both are equipped with an 8-bit microcontroller, double poly EPROM for software code, various standard microcontroller peripherals, voltage regulators for battery interface, A/D for sensor interface, 100 m/spl Omega/ power devices for load drive, and physical layers for line communication interface. All integrated in a single chip. The challenges of diffusion, assembly and test processes are addressed.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122967691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Intelligent powerFET technologies and design implementation techniques [automotive applications] 智能功率场效应管技术和设计实现技术[汽车应用]
2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI: 10.1109/WCT.2004.239809
P. Moens, L. D'Haeze, K. Appeltans, L. Van Den Bossche, B. De Cock, J. Plojhar, P. Gassot, D. Bolognesi, F. De Pestel, H. Casier, M. Tack
{"title":"Intelligent powerFET technologies and design implementation techniques [automotive applications]","authors":"P. Moens, L. D'Haeze, K. Appeltans, L. Van Den Bossche, B. De Cock, J. Plojhar, P. Gassot, D. Bolognesi, F. De Pestel, H. Casier, M. Tack","doi":"10.1109/WCT.2004.239809","DOIUrl":"https://doi.org/10.1109/WCT.2004.239809","url":null,"abstract":"This paper describes the process and design requirements to implement power MOSFET drivers in a smart power technology. The drivers must be able to swing outside of the supply rails and also contain full diagnostics of voltages and currents in the driver transistors. The focus is on automotive applications.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"239 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121031013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Normally-off operation power AlGaN/GaN HFET 正常关闭工作电源AlGaN/GaN HFET
2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI: 10.1109/WCT.2004.240214
N. Ikeda, Jiang Li, S. Yoshida
{"title":"Normally-off operation power AlGaN/GaN HFET","authors":"N. Ikeda, Jiang Li, S. Yoshida","doi":"10.1109/WCT.2004.240214","DOIUrl":"https://doi.org/10.1109/WCT.2004.240214","url":null,"abstract":"We report on the novel normally-off GaN-based heterojunction field effect transistors (HFETs). The AlGaN/AlN/GaN heterostructure on Si (111) substrate was grown using a metalorganic chemical vapor deposition (MOCVD). The HFET for a normally-off operation was fabricated using the AlGaN/ C-GaN heterostructure. As a result, the HFET was operated at the condition of the positive gate bias. The breakdown voltage of FET was about 350 V. We also confirmed that the normally-off HFET was operated at 573 K. A normally-off operation using GaN based HFETs on the silicon substrate was thus confirmed for the first time.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126110822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 50
Design considerations for a 2 MHz synchronous buck converter in CMOS CMOS中2 MHz同步降压变换器的设计考虑
2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI: 10.1109/WCT.2004.239804
A. Fukui, J. Knight
{"title":"Design considerations for a 2 MHz synchronous buck converter in CMOS","authors":"A. Fukui, J. Knight","doi":"10.1109/WCT.2004.239804","DOIUrl":"https://doi.org/10.1109/WCT.2004.239804","url":null,"abstract":"The design considerations for a 2 MHz synchronous buck converter for a cellular phone RF power amplifier supply are presented. Particular emphasis is placed on the problems associated with achieving this high switching frequency with a current-mode architecture and in an inexpensive 0.5 /spl mu/m CMOS process.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124116587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
MBBL diode: a novel soft recovery diode MBBL二极管:一种新型软恢复二极管
2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI: 10.1109/WCT.2004.240350
M. Nemoto, T. Naito, A. Nishiura, K. Ueno
{"title":"MBBL diode: a novel soft recovery diode","authors":"M. Nemoto, T. Naito, A. Nishiura, K. Ueno","doi":"10.1109/WCT.2004.240350","DOIUrl":"https://doi.org/10.1109/WCT.2004.240350","url":null,"abstract":"A novel soft recovery diode, called middle broad buffer layer (MBBL) diode, has been investigated for the first time. It has a broad buffer layer in the middle of a N-drift region, in order to reduce the electric field strength during reverse recovery. This prevents a snappy reverse recovery, due to the large amount of remaining stored charges. The width and the donor concentration in the middle buffer layer are optimized to keep a sufficient high blocking voltage. The trade-off relationship between the reverse recovery loss and the forward voltage drops can also be improved by having soft recovery characteristics.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127638684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Design of a monolithic 2 MHz fast transient voltage regulator chip 单片2mhz快速瞬态稳压芯片的设计
2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI: 10.1109/WCT.2004.240219
Haifei Deng, A. Huang, A. Feuerbacher, Yan Ma
{"title":"Design of a monolithic 2 MHz fast transient voltage regulator chip","authors":"Haifei Deng, A. Huang, A. Feuerbacher, Yan Ma","doi":"10.1109/WCT.2004.240219","DOIUrl":"https://doi.org/10.1109/WCT.2004.240219","url":null,"abstract":"The Earth is mobile. There is a huge market for mobile power nowadays and in the near future. Efficient performance, functionality, small profile and low cost are the most wanted features for mobile power management ICs. In this work, A high-efficiency, high frequency, wide input range monolithic step down DC-DC converter ASIC is designed, based on advanced trench BCD technology. Several novel control concepts are proposed to improve the stability efficiency and transient response. Some important design issues such as device optimisation, driver speed design, parasitic component effects and compensation design are elaborated in this paper.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125535911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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