ACS Nanoscience Au最新文献

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IF 4.8
ACS Nanoscience Au Pub Date : 2025-04-16
Ariane K. Padilha Lorenzett, Tatiane P. Babinski, Vanderlei A. de Lima and Rubiana M. Mainardes*, 
{"title":"","authors":"Ariane K. Padilha Lorenzett, Tatiane P. Babinski, Vanderlei A. de Lima and Rubiana M. Mainardes*, ","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":29799,"journal":{"name":"ACS Nanoscience Au","volume":"5 2","pages":"XXX-XXX XXX-XXX"},"PeriodicalIF":4.8,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsnanoscienceau.4c00057","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144416045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IF 4.8
ACS Nanoscience Au Pub Date : 2025-04-16
Kwabena Bediako, Raffaella Buonsanti, Raymond E. Schaak and Nanfeng Zheng, 
{"title":"","authors":"Kwabena Bediako, Raffaella Buonsanti, Raymond E. Schaak and Nanfeng Zheng, ","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":29799,"journal":{"name":"ACS Nanoscience Au","volume":"5 2","pages":"XXX-XXX XXX-XXX"},"PeriodicalIF":4.8,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsnanoscienceau.5c00025","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144416028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IF 4.8
ACS Nanoscience Au Pub Date : 2025-04-16
Josselyn Mata Calidonio, Arianna I. Maddox, Dhruvi S. Patel, Jonathan B. Dain, Melba Torres Sosa, Nichola J. Hill* and Kimberly Hamad-Schifferli*, 
{"title":"","authors":"Josselyn Mata Calidonio, Arianna I. Maddox, Dhruvi S. Patel, Jonathan B. Dain, Melba Torres Sosa, Nichola J. Hill* and Kimberly Hamad-Schifferli*, ","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":29799,"journal":{"name":"ACS Nanoscience Au","volume":"5 2","pages":"XXX-XXX XXX-XXX"},"PeriodicalIF":4.8,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsnanoscienceau.4c00072","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144416040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In Situ Study of Axial GaSb/GaAs Nanowire Heterostructure Formation. 轴向GaSb/GaAs纳米线异质结构形成的原位研究。
IF 4.8
ACS Nanoscience Au Pub Date : 2025-04-15 eCollection Date: 2025-06-18 DOI: 10.1021/acsnanoscienceau.5c00015
Mikelis Marnauza, Robin Sjökvist, Azemina Kraina, Daniel Jacobsson, Kimberly A Dick
{"title":"<i>In Situ</i> Study of Axial GaSb/GaAs Nanowire Heterostructure Formation.","authors":"Mikelis Marnauza, Robin Sjökvist, Azemina Kraina, Daniel Jacobsson, Kimberly A Dick","doi":"10.1021/acsnanoscienceau.5c00015","DOIUrl":"10.1021/acsnanoscienceau.5c00015","url":null,"abstract":"<p><p>Combining multiple III-V materials into axial nanowire heterostructures has enabled the fabrication of custom nanowire-based devices useful for a wide range of applications. However, our ability to form axial heterostructures between arbitrary combinations of III-V compounds is impeded by a lack of information on the dynamics of the heterojunction formation process, often resulting in suboptimal heterostructure morphologies, particularly for materials including Sb. In this work, we utilize environmental transmission electron microscopy to examine the formation of GaSb/GaAs heterojunctions in Au-seeded nanowires <i>in situ</i>. We demonstrate that the growth parameter window for successful GaSb/GaAs heterostructure formation is very narrow and requires the growth of a ternary GaSb <sub><i>x</i></sub> As<sub>1-<i>x</i></sub> segment. Furthermore, we show that as the nanowire changes the composition from GaSb to GaAs, the nanoparticle and nanowire morphologies are highly dynamic. At the end of the transition, we observe that the nanoparticle volume is halved and the nanowire diameter is reduced from ≈40 to ≈30 nm at the liquid-solid interface. Moreover, the nanowire growth rate increases by a factor of 7, when GaAs composition is reached, at our optimized growth conditions. Additionally, we are able to observe that the change in the crystal phase from GaSb zincblende (ZB) to GaAs wurtzite (WZ) happens via a mixed ZB-4H-WZ regime and is dependent not only on the nanowire composition but also on the vapor-phase composition in the growth chamber. These results offer unique insight into the formation dynamics of axial nanowire heterostructures, elucidating the interplay between all phases and growth species.</p>","PeriodicalId":29799,"journal":{"name":"ACS Nanoscience Au","volume":"5 3","pages":"208-216"},"PeriodicalIF":4.8,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12183588/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144486218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In Situ Study of Axial GaSb/GaAs Nanowire Heterostructure Formation 轴向GaSb/GaAs纳米线异质结构形成的原位研究
IF 4.8
ACS Nanoscience Au Pub Date : 2025-04-14 DOI: 10.1021/acsnanoscienceau.5c0001510.1021/acsnanoscienceau.5c00015
Mikelis Marnauza, Robin Sjökvist, Azemina Kraina, Daniel Jacobsson and Kimberly A. Dick*, 
{"title":"In Situ Study of Axial GaSb/GaAs Nanowire Heterostructure Formation","authors":"Mikelis Marnauza,&nbsp;Robin Sjökvist,&nbsp;Azemina Kraina,&nbsp;Daniel Jacobsson and Kimberly A. Dick*,&nbsp;","doi":"10.1021/acsnanoscienceau.5c0001510.1021/acsnanoscienceau.5c00015","DOIUrl":"https://doi.org/10.1021/acsnanoscienceau.5c00015https://doi.org/10.1021/acsnanoscienceau.5c00015","url":null,"abstract":"<p >Combining multiple III–V materials into axial nanowire heterostructures has enabled the fabrication of custom nanowire-based devices useful for a wide range of applications. However, our ability to form axial heterostructures between arbitrary combinations of III–V compounds is impeded by a lack of information on the dynamics of the heterojunction formation process, often resulting in suboptimal heterostructure morphologies, particularly for materials including Sb. In this work, we utilize environmental transmission electron microscopy to examine the formation of GaSb/GaAs heterojunctions in Au-seeded nanowires <i>in situ</i>. We demonstrate that the growth parameter window for successful GaSb/GaAs heterostructure formation is very narrow and requires the growth of a ternary GaSb<sub><i>x</i></sub>As<sub>1–<i>x</i></sub> segment. Furthermore, we show that as the nanowire changes the composition from GaSb to GaAs, the nanoparticle and nanowire morphologies are highly dynamic. At the end of the transition, we observe that the nanoparticle volume is halved and the nanowire diameter is reduced from ≈40 to ≈30 nm at the liquid–solid interface. Moreover, the nanowire growth rate increases by a factor of 7, when GaAs composition is reached, at our optimized growth conditions. Additionally, we are able to observe that the change in the crystal phase from GaSb zincblende (ZB) to GaAs wurtzite (WZ) happens via a mixed ZB-4H-WZ regime and is dependent not only on the nanowire composition but also on the vapor-phase composition in the growth chamber. These results offer unique insight into the formation dynamics of axial nanowire heterostructures, elucidating the interplay between all phases and growth species.</p>","PeriodicalId":29799,"journal":{"name":"ACS Nanoscience Au","volume":"5 3","pages":"208–216 208–216"},"PeriodicalIF":4.8,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsnanoscienceau.5c00015","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144305621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Correction to “Flexible Cation Exchange Environment via Ligand-Free Metal Chalcogenide Thin Films” 对“通过无配体金属硫族化物薄膜进行柔性阳离子交换环境”的修正
IF 4.8
ACS Nanoscience Au Pub Date : 2025-03-27 DOI: 10.1021/acsnanoscienceau.5c0002110.1021/acsnanoscienceau.5c00021
Hannah R. Lacey, Kevin D. Dobson and Emil A. Hernández-Pagán*, 
{"title":"Correction to “Flexible Cation Exchange Environment via Ligand-Free Metal Chalcogenide Thin Films”","authors":"Hannah R. Lacey,&nbsp;Kevin D. Dobson and Emil A. Hernández-Pagán*,&nbsp;","doi":"10.1021/acsnanoscienceau.5c0002110.1021/acsnanoscienceau.5c00021","DOIUrl":"https://doi.org/10.1021/acsnanoscienceau.5c00021https://doi.org/10.1021/acsnanoscienceau.5c00021","url":null,"abstract":"","PeriodicalId":29799,"journal":{"name":"ACS Nanoscience Au","volume":"5 2","pages":"111 111"},"PeriodicalIF":4.8,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsnanoscienceau.5c00021","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143833000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Correction to "Flexible Cation Exchange Environment via Ligand-Free Metal Chalcogenide Thin Films". 修正“通过无配体金属硫族化物薄膜的柔性阳离子交换环境”。
IF 4.8
ACS Nanoscience Au Pub Date : 2025-03-27 eCollection Date: 2025-04-16 DOI: 10.1021/acsnanoscienceau.5c00021
Hannah R Lacey, Kevin D Dobson, Emil A Hernández-Pagán
{"title":"Correction to \"Flexible Cation Exchange Environment via Ligand-Free Metal Chalcogenide Thin Films\".","authors":"Hannah R Lacey, Kevin D Dobson, Emil A Hernández-Pagán","doi":"10.1021/acsnanoscienceau.5c00021","DOIUrl":"https://doi.org/10.1021/acsnanoscienceau.5c00021","url":null,"abstract":"<p><p>[This corrects the article DOI: 10.1021/acsnanoscienceau.4c00023.].</p>","PeriodicalId":29799,"journal":{"name":"ACS Nanoscience Au","volume":"5 2","pages":"111"},"PeriodicalIF":4.8,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12006850/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143988113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Insight on the Mechanical Properties of Facile Hydrophobic-Barrier-Patterned Bacterial Nanocellulose via Self-Bonding Mechanism. 通过自键机制研究易疏水屏障型细菌纳米纤维素的力学性能。
IF 4.8
ACS Nanoscience Au Pub Date : 2025-03-20 eCollection Date: 2025-06-18 DOI: 10.1021/acsnanoscienceau.4c00077
Maurelio Cabo, Nitin More, Jeffrey R Alston, Eric Laws, Rutujaa Kulkarni, Ram V Mohan, Dennis R LaJeunesse
{"title":"Insight on the Mechanical Properties of Facile Hydrophobic-Barrier-Patterned Bacterial Nanocellulose via Self-Bonding Mechanism.","authors":"Maurelio Cabo, Nitin More, Jeffrey R Alston, Eric Laws, Rutujaa Kulkarni, Ram V Mohan, Dennis R LaJeunesse","doi":"10.1021/acsnanoscienceau.4c00077","DOIUrl":"10.1021/acsnanoscienceau.4c00077","url":null,"abstract":"<p><p>Enhancing the mechanical and structural properties of bacterial nanocellulose (BNC) is key to its use in sustainable nanocomposites. This study employed a hot-press drying method with hydrophobic barriers, folding BNC into four layers and pressing with carbon fiber and Teflon sheets. At 120 °C, carbon fiber-pressed BNC achieved a tensile strength of 43.91 N/mm<sup>2</sup>, 13.84% higher than oven-dried samples and 43.87% higher than Teflon-pressed samples. Scanning electron microscopy (SEM), KLA-Zeta, and atomic force microscopy (AFM) analyses revealed improved self-bonding and surface roughness. Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD) confirmed increased crystallinity and altered hydrogen bonding, enhancing stiffness and structural stability. Optical and thermal tests showed carbon fiber-pressed BNC was less transparent with moderate heat resistance, while Teflon-treated samples remained clear with higher thermal stability. These findings demonstrate that patterned hot pressing strengthens BNC's self-bonding, advancing its potential for use in structural nanocomposites, flexible electronics, and biocompatible scaffolds.</p>","PeriodicalId":29799,"journal":{"name":"ACS Nanoscience Au","volume":"5 3","pages":"128-136"},"PeriodicalIF":4.8,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12183586/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144486223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Insight on the Mechanical Properties of Facile Hydrophobic-Barrier-Patterned Bacterial Nanocellulose via Self-Bonding Mechanism 通过自键机制研究易疏水屏障型细菌纳米纤维素的力学性能
IF 4.8
ACS Nanoscience Au Pub Date : 2025-03-20 DOI: 10.1021/acsnanoscienceau.4c0007710.1021/acsnanoscienceau.4c00077
Maurelio Cabo Jr., Nitin More, Jeffrey R. Alston, Eric Laws, Rutujaa Kulkarni, Ram V. Mohan* and Dennis R. LaJeunesse*, 
{"title":"Insight on the Mechanical Properties of Facile Hydrophobic-Barrier-Patterned Bacterial Nanocellulose via Self-Bonding Mechanism","authors":"Maurelio Cabo Jr.,&nbsp;Nitin More,&nbsp;Jeffrey R. Alston,&nbsp;Eric Laws,&nbsp;Rutujaa Kulkarni,&nbsp;Ram V. Mohan* and Dennis R. LaJeunesse*,&nbsp;","doi":"10.1021/acsnanoscienceau.4c0007710.1021/acsnanoscienceau.4c00077","DOIUrl":"https://doi.org/10.1021/acsnanoscienceau.4c00077https://doi.org/10.1021/acsnanoscienceau.4c00077","url":null,"abstract":"<p >Enhancing the mechanical and structural properties of bacterial nanocellulose (BNC) is key to its use in sustainable nanocomposites. This study employed a hot-press drying method with hydrophobic barriers, folding BNC into four layers and pressing with carbon fiber and Teflon sheets. At 120 °C, carbon fiber-pressed BNC achieved a tensile strength of 43.91 N/mm<sup>2</sup>, 13.84% higher than oven-dried samples and 43.87% higher than Teflon-pressed samples. Scanning electron microscopy (SEM), KLA-Zeta, and atomic force microscopy (AFM) analyses revealed improved self-bonding and surface roughness. Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD) confirmed increased crystallinity and altered hydrogen bonding, enhancing stiffness and structural stability. Optical and thermal tests showed carbon fiber-pressed BNC was less transparent with moderate heat resistance, while Teflon-treated samples remained clear with higher thermal stability. These findings demonstrate that patterned hot pressing strengthens BNC’s self-bonding, advancing its potential for use in structural nanocomposites, flexible electronics, and biocompatible scaffolds.</p>","PeriodicalId":29799,"journal":{"name":"ACS Nanoscience Au","volume":"5 3","pages":"128–136 128–136"},"PeriodicalIF":4.8,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsnanoscienceau.4c00077","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144305586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fermi Velocity Dependent Critical Current in Ballistic Bilayer Graphene Josephson Junctions 弹道双层石墨烯约瑟夫森结中依赖费米速度的临界电流
IF 4.8
ACS Nanoscience Au Pub Date : 2025-03-19 DOI: 10.1021/acsnanoscienceau.4c0008010.1021/acsnanoscienceau.4c00080
Amis Sharma, Chun-Chia Chen, Jordan McCourt, Mingi Kim, Kenji Watanabe, Takashi Taniguchi, Leonid Rokhinson, Gleb Finkelstein and Ivan Borzenets*, 
{"title":"Fermi Velocity Dependent Critical Current in Ballistic Bilayer Graphene Josephson Junctions","authors":"Amis Sharma,&nbsp;Chun-Chia Chen,&nbsp;Jordan McCourt,&nbsp;Mingi Kim,&nbsp;Kenji Watanabe,&nbsp;Takashi Taniguchi,&nbsp;Leonid Rokhinson,&nbsp;Gleb Finkelstein and Ivan Borzenets*,&nbsp;","doi":"10.1021/acsnanoscienceau.4c0008010.1021/acsnanoscienceau.4c00080","DOIUrl":"https://doi.org/10.1021/acsnanoscienceau.4c00080https://doi.org/10.1021/acsnanoscienceau.4c00080","url":null,"abstract":"<p >We perform transport measurements on proximitized, ballistic, bilayer graphene Josephson junctions (BGJJs) in the intermediate-to-long junction regime (<i>L</i> &gt; ξ). We measure the device’s differential resistance as a function of bias current and gate voltage for a range of different temperatures. The extracted critical current <i>I</i><sub>C</sub> follows an exponential trend with temperature: exp(−<i>k</i><sub>B</sub><i>T</i>/<i>δE</i>). Here <i>δE</i> = ℏν<sub><i>F</i></sub>/2<i>πL</i>: an expected trend for intermediate-to-long junctions. From <i>δE</i>, we determine the Fermi velocity of the bilayer graphene, which is found to increase with gate voltage. Simultaneously, we show the carrier density dependence of <i>δE</i>, which is attributed to the quadratic dispersion of bilayer graphene. This is in contrast to single layer graphene Josephson junctions, where <i>δE</i> and the Fermi velocity are independent of the carrier density. The carrier density dependence in BGJJs allows for additional tuning parameters in graphene-based Josephson junction devices.</p>","PeriodicalId":29799,"journal":{"name":"ACS Nanoscience Au","volume":"5 2","pages":"65–69 65–69"},"PeriodicalIF":4.8,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsnanoscienceau.4c00080","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143832714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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