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160W InAlN/GaN HEMTs Amplifier at 2 GHz with Optimized Thermal Management 采用优化热管理的2ghz 160W InAlN/GaN HEMTs放大器
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340059
S. Piotrowicz, O. Jardel, J. Jacquet, D. Lancereau, R. Aubry, E. Morvan, N. Sarazin, J. Dufraisse, C. Dua, M. Oualli, E. Chartier, M. Poisson, C. Gaquière, S. Delage
{"title":"160W InAlN/GaN HEMTs Amplifier at 2 GHz with Optimized Thermal Management","authors":"S. Piotrowicz, O. Jardel, J. Jacquet, D. Lancereau, R. Aubry, E. Morvan, N. Sarazin, J. Dufraisse, C. Dua, M. Oualli, E. Chartier, M. Poisson, C. Gaquière, S. Delage","doi":"10.1109/CSICS.2012.6340059","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340059","url":null,"abstract":"We report on the realization and measurements of InAlN/GaN HEMTs on SiC substrate. At device level, load-pull power measurements were performed at 2 GHz on 2.2mm devices in CW mode. An output power of 10.5W (40.2dBm) with a PAE of 53% were reached. Then, an amplifier was realized using 36mm power die. Thanks to an optimized thermal management, the amplifier allows us to reach an output power of 160W in pulse mode and 105W in CW. To our knowledge, these results represent the highest output powers ever reported for InAlN/GaN HEMT technology.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122205325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Highly Linear Gallium Nitride MMIC LNAs 高线性氮化镓MMIC LNAs
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340109
O. Axelsson, K. Andersson
{"title":"Highly Linear Gallium Nitride MMIC LNAs","authors":"O. Axelsson, K. Andersson","doi":"10.1109/CSICS.2012.6340109","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340109","url":null,"abstract":"In this paper, two Low Noise Amplifiers designed in Gallium Nitride HEMT MMIC technology are presented. The focus of the designs is to achieve good linearity at low power consumption and acceptable noise figure. The first design achieves an OIP3/PDC of 12 using traditional LNA design techniques. In a second design, the OIP3 is improved by 2 dB, raising OIP3/PDC to 19, among the highest figures reported for GaN LNAs. This is achieved by using both inductive source feedback and drain-gate RC feedback.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130767073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Adaptability of a 280 GHz SiGe BiCMOS Process for High Frequency Commercial Applications 280 GHz SiGe BiCMOS工艺在高频商业应用中的适应性
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340098
E. Preisler, J. Zheng, S. Chaudhry, Z. Yan, R. Booth, M. Qamar, M. Racanelli
{"title":"Adaptability of a 280 GHz SiGe BiCMOS Process for High Frequency Commercial Applications","authors":"E. Preisler, J. Zheng, S. Chaudhry, Z. Yan, R. Booth, M. Qamar, M. Racanelli","doi":"10.1109/CSICS.2012.6340098","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340098","url":null,"abstract":"SiGe HBT devices with FMAX up to 500 GHz have been reported in the past few years [1], suggesting the realization of practical circuits into the THz regime. While the bulk of commercial applications will operate at much lower frequencies, the high level of RF performance realized by these devices can be leveraged to enable better circuit designs at these lower frequencies. In this paper several aspects of this optimization will be discussed including operation at both low and high VCC, low IC, and high temperatures. Finally a fully integrated varactor suitable for mm-Wave frequency synthesis will be discussed.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134628844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
RF Performance Potential of Strained-Si, In0.53Ga0.47As, and GaSb Double-Gate Ultra-Thin-Body n-FETs with Lg=10.7 nm 应变si、In0.53Ga0.47As和GaSb双栅超薄体n- fet的射频性能潜力(Lg=10.7 nm
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340068
M. Luisier
{"title":"RF Performance Potential of Strained-Si, In0.53Ga0.47As, and GaSb Double-Gate Ultra-Thin-Body n-FETs with Lg=10.7 nm","authors":"M. Luisier","doi":"10.1109/CSICS.2012.6340068","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340068","url":null,"abstract":"In this paper, using a ballistic, full-band, and atomistic simulation approach based on the nearest-neighbor tight-binding model and the Non-equilibrium Green's Function formalism, the static and RF performance of a (100)/<;110>; strained-Si, (100)/<;100>; In0.53Ga0.47As, as well as (111)/<;110>; GaSb n-type double-gate ultra-thin-body FETs are analyzed and compared. All the structures are designed according to the ITRS specifications for 2020. Due to a relatively large density-of-states, but also high electron velocity, the GaSb FET represents a good compromise between the strained-Si and InGaAs devices. It exhibits therefore the highest ON-current at a given OFF-current, about 10-15% higher than strained-Si and 25-30% higher than InGaAs. However, in terms of current-gain cut-off frequency, the InGaAs FET is far ahead of its two counterparts, outperforming them by a factor of ~3.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"223 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116025058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A High-Efficiency Class F MMIC Power Amplifier at 4.0 GHz Using AlGaN/GaN HEMT Technology 采用AlGaN/GaN HEMT技术的4.0 GHz高效率F类MMIC功率放大器
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340065
V. Zomorrodian, U. Mishra, R. York
{"title":"A High-Efficiency Class F MMIC Power Amplifier at 4.0 GHz Using AlGaN/GaN HEMT Technology","authors":"V. Zomorrodian, U. Mishra, R. York","doi":"10.1109/CSICS.2012.6340065","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340065","url":null,"abstract":"A high-efficiency class F MMIC power amplifier designed at 4 GHz using AlGaN/GaN HEMT technology is presented. At VDS = 20 V the circuit produced 69 % PAE, 30.4 dBm of output power and gain of 11.4 dB. When the drain bias was increased to 35 V, the circuit produced 60% PAE, 34.3 dBm of output power and gain of 12.3 dBm, corresponding to a power density of 5.36 W/mm. The results show significant improvement in PAE compared to the previously published results for MMICs implemented using class E topologies.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114739742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Performance of InP/GaAsSb DHBTs Planarized with Teflon AF Compared to DHBTs with Airbridge Interconnects Teflon AF平面化的InP/GaAsSb dhbt与空桥互连dhbt的性能比较
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340085
R. Lövblom, R. Flückiger, M. Alexandrova, C. Bolognesi
{"title":"Performance of InP/GaAsSb DHBTs Planarized with Teflon AF Compared to DHBTs with Airbridge Interconnects","authors":"R. Lövblom, R. Flückiger, M. Alexandrova, C. Bolognesi","doi":"10.1109/CSICS.2012.6340085","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340085","url":null,"abstract":"We compare the DC and RF performance of InP/GaAsSb/InP DHBTs fabricated in a Teflon AF planarization process to identical DHBTs with airbridge interconnects. No statistically significant difference in performance was observed, proving that the Teflon AF layer does not degrade the devices. Multi-layer deposition and dry etching of Teflon AF were investigated to explore the suitability of Teflon AF as an interlevel dielectric in DHBT based MMICs.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"264 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127264362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A High Gain 600 GHz Amplifier TMIC Using 35 nm Metamorphic HEMT Technology 一种采用35nm变质HEMT技术的高增益600ghz TMIC放大器
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340102
A. Tessmann, A. Leuther, H. Massler, M. Seelmann-Eggebert
{"title":"A High Gain 600 GHz Amplifier TMIC Using 35 nm Metamorphic HEMT Technology","authors":"A. Tessmann, A. Leuther, H. Massler, M. Seelmann-Eggebert","doi":"10.1109/CSICS.2012.6340102","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340102","url":null,"abstract":"In this paper, we are presenting two terahertz monolithic integrated circuits (TMICs) for use in next-generation radar and spectroscopy systems operating in the WR-1.5 waveguide band (500 - 750 GHz). Both amplifier circuits have been realized using a 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology in combination with a benzocyclobutene (BCB) encapsulation to minimize the device parasitics. Furthermore, airbridge type transmission lines (ABTL) and grounded coplanar circuit topology (GCPW) were applied, leading to a compact chip size and excellent gain performance in the submillimeter-wave frequency regime beyond 500 GHz. A realized six-stage ABTL amplifier circuit demonstrated a small-signal gain of more than 20 dB between 502 and 516 GHz, while a six-stage grounded coplanar TMIC achieved a linear gain of 20.3 dB at 610 GHz and more than 18 dB over the bandwidth from 557 to 616 GHz. The total chip size of both submillimeter-wave amplifier circuits was only 0.15 mm2.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128258267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
Photonics-Electronics Convergence System for High Density Inter-Chip Interconnects by Using Silicon Photonics 基于硅光子学的高密度芯片间互连光电子融合系统
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340067
Y. Urino, T. Horikawa, T. Nakamura, Y. Arakawa
{"title":"Photonics-Electronics Convergence System for High Density Inter-Chip Interconnects by Using Silicon Photonics","authors":"Y. Urino, T. Horikawa, T. Nakamura, Y. Arakawa","doi":"10.1109/CSICS.2012.6340067","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340067","url":null,"abstract":"One of the most serious challenges facing the exponential performance growth in the information industry is a bandwidth bottleneck for inter-chip interconnects. We propose a photonics-electronics convergence system in response to this issue. To demonstrate the feasibility of the system, we fabricated a high density optical interposer integrated with an arrayed laser diode, an optical splitter, optical modulators, photodetectors, and optical waveguides on a single silicon substrate. Using this system, a 12.5-Gbps error free data transmission and a 6.6-Tbps/cm2 transmission density were achieved. We believe this technology will solve the bottleneck problem among LSI chips in the future.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128269870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
An Envelope-Tracking CMOS-SOS Power Amplifier with 50% Overall PAE and 29.3 dBm Output Power for LTE Applications 用于LTE应用的包络跟踪CMOS-SOS功率放大器，总PAE为50%，输出功率为29.3 dBm
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340110
M. Hassan, C. Olson, D. Kovac, J. Yan, D. Nobbe, D. Kelly, P. Asbeck, L. Larson
{"title":"An Envelope-Tracking CMOS-SOS Power Amplifier with 50% Overall PAE and 29.3 dBm Output Power for LTE Applications","authors":"M. Hassan, C. Olson, D. Kovac, J. Yan, D. Nobbe, D. Kelly, P. Asbeck, L. Larson","doi":"10.1109/CSICS.2012.6340110","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340110","url":null,"abstract":"This paper presents a CMOS envelope tracking power amplifier for LTE band-13 (782 MHz) applications. The envelope amplifier is implemented in 0.18 μm bulk CMOS process while the RF power amplifier is designed in 0.35 μm CMOS Silicon-on-Sapphire (SOS) technology. To overcome low breakdown voltage limit of MOSFETs, a stacked FET structure is used. The complete envelope tracking system achieves an overall PAE of 50% for 16 QAM, 10 MHz LTE signal with 6.6 dB peak-to-average ratio (PAPR), while delivering 29.3 dBm output power. A memory-less digital pre-distortion (DPD) is employed to linearize the overall system, which pushes ACLR down to -46.5 dBc.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130707271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
F-Band Bidirectional Amplifier Using 75-nm InP HEMTs 使用75nm InP HEMTs的f波段双向放大器
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340087
S. Shiba, M. Sato, T. Suzuki, Y. Nakasha, T. Takahashi, K. Makiyama, N. Hara
{"title":"F-Band Bidirectional Amplifier Using 75-nm InP HEMTs","authors":"S. Shiba, M. Sato, T. Suzuki, Y. Nakasha, T. Takahashi, K. Makiyama, N. Hara","doi":"10.1109/CSICS.2012.6340087","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340087","url":null,"abstract":"We have developed an F-band (90 to 140 GHz) bidirectional amplifier MMIC using a 75-nm InP HEMT technology for short-range millimeter-wave multi-gigabit communication systems. Inherent symmetric common-gate transistors and parallel circuits consisting of an inductor and a switch realizes a bidirectional operation with a wide bandwidth of over 50 GHz. Small signal gains of 12-15 dB and 9-12 dB were achieved in forward and reverse directions, respectively. Fractional bandwidths of the developed bidirectional amplifier were 39% for the forward direction and 32% for the reverse direction, which were almost double as large as those of conventional bidirectional amplifiers. The power consumption of the bidirectional amplifier was 15 mW under a 2.4-V supply. The chip measures 0.70 × 0.65 mm. The simulated NF is lower than 5 dB, and Psat is larger than 5 dBm. The use of this bidirectional amplifier provides miniaturization of the multi-gigabit communication systems and eliminates signal switching loss.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134045068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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