A High-Efficiency Class F MMIC Power Amplifier at 4.0 GHz Using AlGaN/GaN HEMT Technology

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI:10.1109/CSICS.2012.6340065

V. Zomorrodian, U. Mishra, R. York

引用次数: 4

Abstract

A high-efficiency class F MMIC power amplifier designed at 4 GHz using AlGaN/GaN HEMT technology is presented. At VDS = 20 V the circuit produced 69 % PAE, 30.4 dBm of output power and gain of 11.4 dB. When the drain bias was increased to 35 V, the circuit produced 60% PAE, 34.3 dBm of output power and gain of 12.3 dBm, corresponding to a power density of 5.36 W/mm. The results show significant improvement in PAE compared to the previously published results for MMICs implemented using class E topologies.

查看原文本刊更多论文

采用AlGaN/GaN HEMT技术的4.0 GHz高效率F类MMIC功率放大器

提出了一种采用AlGaN/GaN HEMT技术设计的4 GHz高效率F级MMIC功率放大器。在VDS = 20 V时，电路产生69%的PAE, 30.4 dBm的输出功率和11.4 dB的增益。当漏极偏置增加到35 V时，电路产生60%的PAE，输出功率为34.3 dBm，增益为12.3 dBm，对应的功率密度为5.36 W/mm。结果显示，与之前发布的使用E类拓扑实现的mmic的结果相比，PAE有了显著改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

自引率

0.00%

发文量