160W InAlN/GaN HEMTs Amplifier at 2 GHz with Optimized Thermal Management

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI:10.1109/CSICS.2012.6340059

S. Piotrowicz, O. Jardel, J. Jacquet, D. Lancereau, R. Aubry, E. Morvan, N. Sarazin, J. Dufraisse, C. Dua, M. Oualli, E. Chartier, M. Poisson, C. Gaquière, S. Delage

引用次数: 3

Abstract

We report on the realization and measurements of InAlN/GaN HEMTs on SiC substrate. At device level, load-pull power measurements were performed at 2 GHz on 2.2mm devices in CW mode. An output power of 10.5W (40.2dBm) with a PAE of 53% were reached. Then, an amplifier was realized using 36mm power die. Thanks to an optimized thermal management, the amplifier allows us to reach an output power of 160W in pulse mode and 105W in CW. To our knowledge, these results represent the highest output powers ever reported for InAlN/GaN HEMT technology.

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采用优化热管理的2ghz 160W InAlN/GaN HEMTs放大器

我们报道了在SiC衬底上实现InAlN/GaN hemt的方法和测量结果。在器件级，在连续波模式下，在2.2mm器件上以2 GHz频率进行负载-拉力功率测量。输出功率为10.5W (40.2dBm)， PAE为53%。然后，采用36mm功率芯片实现了放大器。由于优化的热管理，放大器可以在脉冲模式下达到160W的输出功率，在连续波模式下达到105W的输出功率。据我们所知，这些结果代表了有史以来报道的InAlN/GaN HEMT技术的最高输出功率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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