采用AlGaN/GaN HEMT技术的4.0 GHz高效率F类MMIC功率放大器

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI:10.1109/CSICS.2012.6340065

V. Zomorrodian, U. Mishra, R. York

{"title":"采用AlGaN/GaN HEMT技术的4.0 GHz高效率F类MMIC功率放大器","authors":"V. Zomorrodian, U. Mishra, R. York","doi":"10.1109/CSICS.2012.6340065","DOIUrl":null,"url":null,"abstract":"A high-efficiency class F MMIC power amplifier designed at 4 GHz using AlGaN/GaN HEMT technology is presented. At VDS = 20 V the circuit produced 69 % PAE, 30.4 dBm of output power and gain of 11.4 dB. When the drain bias was increased to 35 V, the circuit produced 60% PAE, 34.3 dBm of output power and gain of 12.3 dBm, corresponding to a power density of 5.36 W/mm. The results show significant improvement in PAE compared to the previously published results for MMICs implemented using class E topologies.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A High-Efficiency Class F MMIC Power Amplifier at 4.0 GHz Using AlGaN/GaN HEMT Technology\",\"authors\":\"V. Zomorrodian, U. Mishra, R. York\",\"doi\":\"10.1109/CSICS.2012.6340065\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high-efficiency class F MMIC power amplifier designed at 4 GHz using AlGaN/GaN HEMT technology is presented. At VDS = 20 V the circuit produced 69 % PAE, 30.4 dBm of output power and gain of 11.4 dB. When the drain bias was increased to 35 V, the circuit produced 60% PAE, 34.3 dBm of output power and gain of 12.3 dBm, corresponding to a power density of 5.36 W/mm. The results show significant improvement in PAE compared to the previously published results for MMICs implemented using class E topologies.\",\"PeriodicalId\":290079,\"journal\":{\"name\":\"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2012.6340065\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2012.6340065","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

提出了一种采用AlGaN/GaN HEMT技术设计的4 GHz高效率F级MMIC功率放大器。在VDS = 20 V时，电路产生69%的PAE, 30.4 dBm的输出功率和11.4 dB的增益。当漏极偏置增加到35 V时，电路产生60%的PAE，输出功率为34.3 dBm，增益为12.3 dBm，对应的功率密度为5.36 W/mm。结果显示，与之前发布的使用E类拓扑实现的mmic的结果相比，PAE有了显著改善。

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A High-Efficiency Class F MMIC Power Amplifier at 4.0 GHz Using AlGaN/GaN HEMT Technology

A high-efficiency class F MMIC power amplifier designed at 4 GHz using AlGaN/GaN HEMT technology is presented. At VDS = 20 V the circuit produced 69 % PAE, 30.4 dBm of output power and gain of 11.4 dB. When the drain bias was increased to 35 V, the circuit produced 60% PAE, 34.3 dBm of output power and gain of 12.3 dBm, corresponding to a power density of 5.36 W/mm. The results show significant improvement in PAE compared to the previously published results for MMICs implemented using class E topologies.

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2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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