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2022 IEEE International Flexible Electronics Technology Conference (IFETC)最新文献

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PLENARY 4: The Energy Revolution Driven by Thin Film Processing 全体会议4:薄膜加工驱动的能源革命
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/ifetc53656.2022.9948536
{"title":"PLENARY 4: The Energy Revolution Driven by Thin Film Processing","authors":"","doi":"10.1109/ifetc53656.2022.9948536","DOIUrl":"https://doi.org/10.1109/ifetc53656.2022.9948536","url":null,"abstract":"","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125651258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Event-Driven System Architecture for Smart Flexible Sensors in Healthcare Applications 医疗保健应用中用于智能柔性传感器的事件驱动系统架构
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948527
Y. Zhao, Y. Li, J. Zhou, G. He, Y. Liu, J. Zhao, B. Zhao, M. Lin, X. Wang, Z. Qian, S. Chen, T. Wan, Y. Lian
{"title":"An Event-Driven System Architecture for Smart Flexible Sensors in Healthcare Applications","authors":"Y. Zhao, Y. Li, J. Zhou, G. He, Y. Liu, J. Zhao, B. Zhao, M. Lin, X. Wang, Z. Qian, S. Chen, T. Wan, Y. Lian","doi":"10.1109/IFETC53656.2022.9948527","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948527","url":null,"abstract":"Flexible electronics has the great potential for healthcare applications, especially for prevention-oriented healthcare and personalized medicine. An essential block in the flexible biomedical sensor is the smart interface circuit that facilitates signal recording, decision making, and wireless transmission. This paper presents an ultra-low power system architecture for flexible sensors that is configurable for different types of biomedical signals and capable of extracting information from raw data while facilitates communications among multiple sensors using secure body channel communication (BCC).","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131810859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Portable Electrochemical Biosensors for Highly Sensitive Detection of Biomarkers 用于高灵敏度生物标志物检测的便携式电化学生物传感器
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948446
Ying Fu, Feng Yan
{"title":"Portable Electrochemical Biosensors for Highly Sensitive Detection of Biomarkers","authors":"Ying Fu, Feng Yan","doi":"10.1109/IFETC53656.2022.9948446","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948446","url":null,"abstract":"The analysis of biomarkers plays an important role in the early diagnosis of diseases and will greatly benefit patients with a higher cure rate. However, the low abundance of biomarkers in physiological environments requires ultrahigh sensitivity of a detection technology.[1] Organic electrochemical transistors (OECT) are versatile sensing platform with low cost for easy-to-use, portable, and disposable biosensors. [2]-[4] They consist of gate electrode, source and drain electrodes with a thin layer of an organic semiconductor is deposited between them. [5]-[6] Here, we fabricate a portable and smart-phone-controlled biosensing platform based on disposable organic electrochemical transistors for ultrasensitive analysis of microRNA (miRNA) biomarkers within 1 hour.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128408975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-integrated quantum random number generator chip based on vacuum fluctuation 基于真空涨落的高集成量子随机数产生芯片
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948494
Yaqi Feng, J. Tao, Yan Li
{"title":"High-integrated quantum random number generator chip based on vacuum fluctuation","authors":"Yaqi Feng, J. Tao, Yan Li","doi":"10.1109/IFETC53656.2022.9948494","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948494","url":null,"abstract":"We propose and implement a quantum random number generator chip based on vacuum fluctuation. The chip with PD is only 5mm×4.6mm in size. When 1550nm, 10mW laser is input, and the thermo-modulated VOA voltage is around 1.257, PD can achieve balance detection. The original data through oscilloscope collection and MATLAB processing, the SNR is 15.34. The random number generator can be used in cryptography, simulation calculation, lottery industry, etc.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134142669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ionic Defect Analysis in Flexible Hybrid Perovskite Memristor using Deep Level Transient Spectroscopy 柔性混合钙钛矿忆阻器中离子缺陷的深能级瞬态光谱分析
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948530
H. J. Gogoi, Abdul Basit Andrabi, M. R. Sekhar, A. T. Mallajosyula
{"title":"Ionic Defect Analysis in Flexible Hybrid Perovskite Memristor using Deep Level Transient Spectroscopy","authors":"H. J. Gogoi, Abdul Basit Andrabi, M. R. Sekhar, A. T. Mallajosyula","doi":"10.1109/IFETC53656.2022.9948530","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948530","url":null,"abstract":"In this work, we have fabricated a hybrid organic inorganic perovskite memristor on the flexible PET substrate. The device shows excellent resistive switching performance with the SET voltage of 0.45 V, the RESET voltage of -0.28 V, and ON/OFF ratio of 610. Furthermore, we have performed temperature dependent deep level transient spectroscopy measurements to study the origin of ion migration in our perovskite layer. Our measurements indicate the presence of methyl ammonium vacancies . The measured activation energy of ${text{V}}_{{text{MA}}}^{text{ - }}$ (0.48 eV) is low enough to have an impact on the filament formation, and thus, the memristive behaviour of the device.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133890761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PLENARY 6: Flexible OLED Displays with Ink-Jet Printing Technology 全体会议6:采用喷墨打印技术的柔性OLED显示器
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/ifetc53656.2022.9948476
{"title":"PLENARY 6: Flexible OLED Displays with Ink-Jet Printing Technology","authors":"","doi":"10.1109/ifetc53656.2022.9948476","DOIUrl":"https://doi.org/10.1109/ifetc53656.2022.9948476","url":null,"abstract":"","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134094009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Piezotronic Organic (P)-Inorganic(N) Diode-Based Heterojunction in Wearable Harvesters/Sensors 可穿戴收割机/传感器中基于压电有机(P)-无机(N)二极管的异质结
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948495
Zihao Liang, Weiwei Li, A. Rasheed, Kai Wang, Hang Zhou, E. Iranmanesh
{"title":"Piezotronic Organic (P)-Inorganic(N) Diode-Based Heterojunction in Wearable Harvesters/Sensors","authors":"Zihao Liang, Weiwei Li, A. Rasheed, Kai Wang, Hang Zhou, E. Iranmanesh","doi":"10.1109/IFETC53656.2022.9948495","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948495","url":null,"abstract":"This paper reports on formation of piezotronic heterojunction P-N diode to be utilized in tactile sensing and harvesting applications. Such junction-based diode rather than being an efficient wearable energy harvester also shows promising results in sensitivity which is truly competitive to the state-of-the-arts.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125873989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanism study of positive-bias stress stability for solution processed oxide semiconductor TFT 固溶氧化半导体TFT正偏置应力稳定性机理研究
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948525
Haoxin Li, Guangwei Xu, Shibing Long
{"title":"Mechanism study of positive-bias stress stability for solution processed oxide semiconductor TFT","authors":"Haoxin Li, Guangwei Xu, Shibing Long","doi":"10.1109/IFETC53656.2022.9948525","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948525","url":null,"abstract":"In this study, we investigated the positive bias stress (PBS) stability of solution-processed oxide semiconductor thin-film transistors (TFTs) under different stress gate voltages and temperatures. The ΔVon vs. stress time data were fitted very well by the stretched-exponential model. We also analyzed the data using a thermalization energy analysis method and found estimated barrier heights that agree with the stretched-exponential model fitting. We attributed the PBS instability to the deep interface traps at the interface between channel and gate insulator.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"30 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120822207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Automatic Droplet Splitting and Routing Algorithm on Digital Microfluidics Chip 数字微流控芯片上液滴的自动分割和路由算法
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948496
C. Chang, G. Li, Y. Zheng, C. Hu, H. Ma
{"title":"Automatic Droplet Splitting and Routing Algorithm on Digital Microfluidics Chip","authors":"C. Chang, G. Li, Y. Zheng, C. Hu, H. Ma","doi":"10.1109/IFETC53656.2022.9948496","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948496","url":null,"abstract":"The work proposed an automatic droplet splitting and routing algorithm on the control software based on a digital microfluidics chip. The algorithm can generate single droplets in an array by a recursive process, which is automatic and time-saving. The algorithm can be applied on biomedical applications in need of droplet arrays of large scale.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124562750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Trap Passivation by Reactive Oxygen for Reducing Hysteresis in Organic Field-Effect Transistors 用活性氧钝化阱降低有机场效应晶体管的迟滞
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948484
Ping-An Chen, Yuanyuan Hu
{"title":"Trap Passivation by Reactive Oxygen for Reducing Hysteresis in Organic Field-Effect Transistors","authors":"Ping-An Chen, Yuanyuan Hu","doi":"10.1109/IFETC53656.2022.9948484","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948484","url":null,"abstract":"Achieving small hysteresis in organic field-effect transistors (OFETs) is important for their practical applications. Herein, we developed a convenient strategy for reducing the hysteresis in fabricated OFETs. Specifically, by placing the devices in the atmosphere with reactive oxygen for a short time, the device hysteresis is greatly reduced while the device mobility is unchanged, which is probably attributed to the trap passivation effect of reactive oxygen. Our findings offer a simple method for obtaining OFETs with negligible hysteresis.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123414649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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