Ionic Defect Analysis in Flexible Hybrid Perovskite Memristor using Deep Level Transient Spectroscopy

Abstract

In this work, we have fabricated a hybrid organic inorganic perovskite memristor on the flexible PET substrate. The device shows excellent resistive switching performance with the SET voltage of 0.45 V, the RESET voltage of -0.28 V, and ON/OFF ratio of 610. Furthermore, we have performed temperature dependent deep level transient spectroscopy measurements to study the origin of ion migration in our perovskite layer. Our measurements indicate the presence of methyl ammonium vacancies . The measured activation energy of ${\text{V}}_{{\text{MA}}}^{\text{ - }}$ (0.48 eV) is low enough to have an impact on the filament formation, and thus, the memristive behaviour of the device.