Trap Passivation by Reactive Oxygen for Reducing Hysteresis in Organic Field-Effect Transistors

Achieving small hysteresis in organic field-effect transistors (OFETs) is important for their practical applications. Herein, we developed a convenient strategy for reducing the hysteresis in fabricated OFETs. Specifically, by placing the devices in the atmosphere with reactive oxygen for a short time, the device hysteresis is greatly reduced while the device mobility is unchanged, which is probably attributed to the trap passivation effect of reactive oxygen. Our findings offer a simple method for obtaining OFETs with negligible hysteresis.