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2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)最新文献

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Metamaterial Integrated Radar Sensors for Location Tracking and Vital Sign Detection 用于位置跟踪和生命体征检测的超材料集成雷达传感器
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226169
C. Wu, Yichao Yuan
{"title":"Metamaterial Integrated Radar Sensors for Location Tracking and Vital Sign Detection","authors":"C. Wu, Yichao Yuan","doi":"10.1109/RFIT49453.2020.9226169","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226169","url":null,"abstract":"This paper introduces two types of radar sensor architecture integrated with metamaterial (MTM) leaky wave antennas (LWA) that have been developed recently. The first architecture is a self-injection locked (SIL) radar sensor with MTM LWA, where the LWA is designed with −60° to +30° beam-steering angle when the frequency varies from 1.85 GHz to 2.85 GHz. The second one is MTM LWA-based homodyne radar architecture, where the LWA scans from −30° to +50° as the frequency varies from 24.3 GHz to 27.3 GHz. For proof-of-concept, two targets sitting at different places are chosen for vital sign detection by using the proposed two radar sensor architectures, respectively. Meanwhile, locations of these two targets can also be tracked accurately. Experimental results agree well with the ground truth, which verifies the validity of the proposed radar sensor architectures.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122141833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Beam Steering in Graphene-Based sub-THz Dipole Phased Array Antenna 基于石墨烯的亚太赫兹偶极相控阵天线的波束控制
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226174
M. Mubarak, S. Hara, I. Watanabe, A. Kasamatsu
{"title":"Beam Steering in Graphene-Based sub-THz Dipole Phased Array Antenna","authors":"M. Mubarak, S. Hara, I. Watanabe, A. Kasamatsu","doi":"10.1109/RFIT49453.2020.9226174","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226174","url":null,"abstract":"This paper proposes a novel low-profile structure of graphene-based sub-THz reconfigurable phased array antenna for versatile beam steering function. The model is composed of a pair of dipole antenna coupled symmetrically to the feed point through co-planar strip-line (CPS) and two graphene sheets loaded at the lower boundary of the CPS. To exploit beam steering capability, the chemical potential of each sheet is tuned independently by applying two adequate DC biasing voltages. Along with its simplicity, the proposed model enables versatile beam steering via a narrow tuning range of chemical potential, therefore, promoting for easy implementation through the common available micro-fabrication techniques. Through simulating the model at the D-band, it is shown that beam steering of $pm 22^{circ}$ can be achieved at 150 GHz in the E-plane with a chemical potential that varies from 0 to 0.2 eV. Due to the low-profile design and narrow chemical potential range, the proposed model is potentially promising to be applicable at higher frequencies up to visible band.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122296778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
InP HBT technology for THz applications 用于太赫兹应用的HBT技术
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226243
N. Weimann
{"title":"InP HBT technology for THz applications","authors":"N. Weimann","doi":"10.1109/RFIT49453.2020.9226243","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226243","url":null,"abstract":"InP-based electronic technologies are well suited for THz applications due to the combination of high electron velocity and breakdown field in this material system. Today's highest frequency circuits are built from InP HEMT devices, exceeding 1 THz application frequency. The InP heterojunction bipolar transistor (InP HBT) has high potential for further development in the THz frequency range through scaling and process development. A lack of circuit complexity in InP electronic circuit technology compared to CMOS can be mitigated by heterointegration. The concept of vertical integration is of particularly high interest for THz phased arrays.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132922407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
AC-Stacked Power Amplifier for 5G Mobile Handset Applications in Band n77 n77频段5G手机应用交流堆叠功率放大器
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226179
J. Enomoto, Toshikazu Terashima, Makoto Itou, Kazuo Watanabe, Yusuke Tanaka, Satoshi Tanaka, Satoshi Arayashiki
{"title":"AC-Stacked Power Amplifier for 5G Mobile Handset Applications in Band n77","authors":"J. Enomoto, Toshikazu Terashima, Makoto Itou, Kazuo Watanabe, Yusuke Tanaka, Satoshi Tanaka, Satoshi Arayashiki","doi":"10.1109/RFIT49453.2020.9226179","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226179","url":null,"abstract":"This paper describes the design, implementation and measurement of a power amplifier (PA) for the fifth-generation (5G) mobile handset applications operating in Band n77 (3.3-4.2 GHz). The power stage of the PA applies an AC (Alter-nating Current) -stacked method to meet the requirements of the limited supply voltage and the increasing output power of 5G mobile handsets. The implemented PA module delivers the linear gain of more than 31.3 dB in the entire of Band n77 and the output power of more than 28.7 dBm and 27.3 dBm from 3350 MHz to 3900 MHz and at 4150 MHz, respectively, at a 3.4 V supply voltage under the modulation condition of a 5G-NR (New Radio) 100 MHz signal.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131979297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
X-band 100 W-class Broadband High Power Amplifier Using High Power Density GaN-HEMTs 使用高功率密度gan - hemt的x波段100w级宽带高功率放大器
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226232
Kei Fukunaga, Takumi Sugitani, Y. Yamaguchi, Daisuke Tsunami, M. Hangai, S. Shinjo
{"title":"X-band 100 W-class Broadband High Power Amplifier Using High Power Density GaN-HEMTs","authors":"Kei Fukunaga, Takumi Sugitani, Y. Yamaguchi, Daisuke Tsunami, M. Hangai, S. Shinjo","doi":"10.1109/RFIT49453.2020.9226232","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226232","url":null,"abstract":"In this paper, an X-band 100 W class high power amplifier GaN monolithic microwave integrated circuit (MMIC) is presented. A GaN high electron mobility transistor (HEMT) with a power density exceeding 10 W/mm has been developed by achieving both electric field relief and high power density to increase the amplifier output. This high power amplifier GaN MMIC is manufactured using a GaN HEMT, which has high power density. Measurement results of the two-stage amplifier MMIC show output power of 80–100 W, a power added efficiency (PAE) of 42%, and a gain of 18 dB. This result is comparable with the best state-of-the-art X-band MMIC power amplifiers ever reported. This indicates that the developed amplifier has an advantage when it is utilized in a transmit module.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122220380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
5-GHz Band Wi-Fi Backscatter System for Multiple Sensor Nodes Identification 多传感器节点识别的5ghz频段Wi-Fi后向散射系统
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226217
Koki Edamatsu, Taiki Machii, M. Motoyoshi, S. Kameda, N. Suematsu
{"title":"5-GHz Band Wi-Fi Backscatter System for Multiple Sensor Nodes Identification","authors":"Koki Edamatsu, Taiki Machii, M. Motoyoshi, S. Kameda, N. Suematsu","doi":"10.1109/RFIT49453.2020.9226217","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226217","url":null,"abstract":"In this paper, we propose multiple sensor nodes identification based on 5 GHz band Wi-Fi system for wireless IoT system. This identification system utilizes backscatter which is used for RFID. Wi-Fi signal and Wi-Fi backscatter signal are multiplied to downconvert to identify sensor node (SN) in the backscatter receiver. Each sensor node (SN) uses different clock frequencies to generate backscatter signals of the received Wi-Fi signal. In the backscatter receiver, the Wi-Fi signal and the backscatter signal are multiplied to downconvert, thus the downconverted spectrum appears in different frequencies for identifying multiple SNs easily. The effectiveness of the proposed system is confirmed by experimental demonstration.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114266720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Millimeter-Wave Dual-Band Class-F Power Amplifier in 90 nm CMOS 90nm CMOS毫米波双带f类功率放大器
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226200
Zhi-Jia Huang, Z. Fu, B. Huang, Yu-Ting Lin, Kun-Yao Kao, Kun-You Lin
{"title":"A Millimeter-Wave Dual-Band Class-F Power Amplifier in 90 nm CMOS","authors":"Zhi-Jia Huang, Z. Fu, B. Huang, Yu-Ting Lin, Kun-Yao Kao, Kun-You Lin","doi":"10.1109/RFIT49453.2020.9226200","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226200","url":null,"abstract":"A 28/38 GHz dual-band class-F power amplifier (PA) using 90-nm CMOS process is proposed. The efficiency of the two-stage PA is enhanced by the proposed dual-band class-F output matching network, in which the harmonic impedance of both bands is controlled to fulfill the voltage and current waveform for class-F operation. The proposed PA achieves a measured small-signal gain of 20.5 and 14.6 dB, saturation output power (Psat) of 15.5 and 13.1 dBm, peak power-added efficiency (PAE) of 27.2 and 16.4%, output 1-dB compression power (OP1dB) of 13.9 and 11.4 dBm at 28 and 38 GHz, respectively.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125238872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Efficiency DC-RF/RF-DC Conversion Based on High-Efficiency Power Amplifier Design Technique 基于高效功率放大器设计技术的高效DC-RF/RF-DC转换
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226189
R. Ishikawa, K. Honjo
{"title":"High-Efficiency DC-RF/RF-DC Conversion Based on High-Efficiency Power Amplifier Design Technique","authors":"R. Ishikawa, K. Honjo","doi":"10.1109/RFIT49453.2020.9226189","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226189","url":null,"abstract":"A common high-efficiency operation condition for a transistor can be applied to high-efficiency DC-to-RF and RF-to-DC conversion devices based on a time reversal duality explained by Hamill. For each operation at a microwave region, the same optimum impedance termination condition including harmonics is applied to the transistor drain node. On the other hand, optimum impedance termination conditions to the transistor gate node differ between DC-to-RF and RF-to-DC conversion operations. Based on this design method, each GaN HEMT device at the C-band has been evaluated and each has exhibited an efficiency of more than 70%.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125240538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 27-GHz Continuous Class-F Power Amplifier with AM-PM Compensation in 65 nm CMOS Process 一种65nm CMOS制程AM-PM补偿的27ghz连续f类功率放大器
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226181
Yen-Ting Lin, Yu-Min Chen, Chun-Nien Chen, Huei Wang
{"title":"A 27-GHz Continuous Class-F Power Amplifier with AM-PM Compensation in 65 nm CMOS Process","authors":"Yen-Ting Lin, Yu-Min Chen, Chun-Nien Chen, Huei Wang","doi":"10.1109/RFIT49453.2020.9226181","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226181","url":null,"abstract":"A 27-GHz continuous class-F (CCF) power amplifier (PA) fabricated in 65-nm CMOS process is presented in this paper. The harmonically tuned networks are adopted at drain terminals for waveform rectification. By reducing the overlaps between voltage and current waveforms, the power added efficiency (PAE) can be boosted accordingly. An NMOS pre-distortion linearizer applied at gate terminal is used for AM-PM compensation. Due to negative phase deviation with low insertion loss, the AM-PM distortion resulted from overdriven mode can be improved without degrading the large signal performance. This CCF PA successfully achieves 9.9-dB small-signal gain, 18.4 dBm $P_{sat}$ with 37.7% $PAE_{max}$, and 17.8 dBm OP1dB with 37% $PAE_{1dB}$ at 27 GHz continuous wave (CW) measurement. In addition, under the modulated scheme of 64-QAM with 1.5 Gbps data rate centred at 27 GHz, this CCF PA achieves −25.2 dB EVM with average output power ($P_{o, avg}$) of 13.9 dBm and average PAE of 24.4%.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116843820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Asynchronous near-field measurement and far-field characterization using electrooptic probes in the millimeter-wave band 毫米波波段电光探头异步近场测量和远场表征
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226240
S. Hisatake
{"title":"Asynchronous near-field measurement and far-field characterization using electrooptic probes in the millimeter-wave band","authors":"S. Hisatake","doi":"10.1109/RFIT49453.2020.9226240","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226240","url":null,"abstract":"We show the principle and setup of an electric field visualization system based on an asynchronous measurement technique, which visualizes the spatial distributions of electric near-fields three-dimensionally without plugging a cable to the radio frequency (RF) source to be measured. Although the measurement system is a so-called spectrum analyzer type, not only the amplitude but also the phase distribution can be mapped. Antenna characterizations based on a near-field to far-field transformation at millimeter-wave region are demonstrated. We also demonstrate that our system can reveal the nearfield distribution of the millimeter-wave car radar would be distorted by car bumper placement. We believe that the presented technique is a promising inspection technique for not only radars but also the on-chip antenna devices.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122719213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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