X-band 100 W-class Broadband High Power Amplifier Using High Power Density GaN-HEMTs

Abstract

In this paper, an X-band 100 W class high power amplifier GaN monolithic microwave integrated circuit (MMIC) is presented. A GaN high electron mobility transistor (HEMT) with a power density exceeding 10 W/mm has been developed by achieving both electric field relief and high power density to increase the amplifier output. This high power amplifier GaN MMIC is manufactured using a GaN HEMT, which has high power density. Measurement results of the two-stage amplifier MMIC show output power of 80–100 W, a power added efficiency (PAE) of 42%, and a gain of 18 dB. This result is comparable with the best state-of-the-art X-band MMIC power amplifiers ever reported. This indicates that the developed amplifier has an advantage when it is utilized in a transmit module.