用于太赫兹应用的HBT技术

2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI:10.1109/RFIT49453.2020.9226243

N. Weimann

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引用次数: 5

摘要

基于inp的电子技术非常适合太赫兹应用，因为这种材料系统具有高电子速度和击穿场。今天的最高频率电路是由InP HEMT器件构建的，超过1太赫兹的应用频率。InP异质结双极晶体管(InP HBT)在太赫兹频率范围内具有很大的发展潜力。与CMOS相比，InP电子电路技术缺乏电路复杂性，这可以通过异质集成来缓解。垂直集成的概念对于太赫兹相控阵来说是非常重要的。

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InP HBT technology for THz applications

InP-based electronic technologies are well suited for THz applications due to the combination of high electron velocity and breakdown field in this material system. Today's highest frequency circuits are built from InP HEMT devices, exceeding 1 THz application frequency. The InP heterojunction bipolar transistor (InP HBT) has high potential for further development in the THz frequency range through scaling and process development. A lack of circuit complexity in InP electronic circuit technology compared to CMOS can be mitigated by heterointegration. The concept of vertical integration is of particularly high interest for THz phased arrays.

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2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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