High-Efficiency DC-RF/RF-DC Conversion Based on High-Efficiency Power Amplifier Design Technique

Abstract

A common high-efficiency operation condition for a transistor can be applied to high-efficiency DC-to-RF and RF-to-DC conversion devices based on a time reversal duality explained by Hamill. For each operation at a microwave region, the same optimum impedance termination condition including harmonics is applied to the transistor drain node. On the other hand, optimum impedance termination conditions to the transistor gate node differ between DC-to-RF and RF-to-DC conversion operations. Based on this design method, each GaN HEMT device at the C-band has been evaluated and each has exhibited an efficiency of more than 70%.