90nm CMOS毫米波双带f类功率放大器

2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI:10.1109/RFIT49453.2020.9226200

Zhi-Jia Huang, Z. Fu, B. Huang, Yu-Ting Lin, Kun-Yao Kao, Kun-You Lin

{"title":"90nm CMOS毫米波双带f类功率放大器","authors":"Zhi-Jia Huang, Z. Fu, B. Huang, Yu-Ting Lin, Kun-Yao Kao, Kun-You Lin","doi":"10.1109/RFIT49453.2020.9226200","DOIUrl":null,"url":null,"abstract":"A 28/38 GHz dual-band class-F power amplifier (PA) using 90-nm CMOS process is proposed. The efficiency of the two-stage PA is enhanced by the proposed dual-band class-F output matching network, in which the harmonic impedance of both bands is controlled to fulfill the voltage and current waveform for class-F operation. The proposed PA achieves a measured small-signal gain of 20.5 and 14.6 dB, saturation output power (Psat) of 15.5 and 13.1 dBm, peak power-added efficiency (PAE) of 27.2 and 16.4%, output 1-dB compression power (OP1dB) of 13.9 and 11.4 dBm at 28 and 38 GHz, respectively.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Millimeter-Wave Dual-Band Class-F Power Amplifier in 90 nm CMOS\",\"authors\":\"Zhi-Jia Huang, Z. Fu, B. Huang, Yu-Ting Lin, Kun-Yao Kao, Kun-You Lin\",\"doi\":\"10.1109/RFIT49453.2020.9226200\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 28/38 GHz dual-band class-F power amplifier (PA) using 90-nm CMOS process is proposed. The efficiency of the two-stage PA is enhanced by the proposed dual-band class-F output matching network, in which the harmonic impedance of both bands is controlled to fulfill the voltage and current waveform for class-F operation. The proposed PA achieves a measured small-signal gain of 20.5 and 14.6 dB, saturation output power (Psat) of 15.5 and 13.1 dBm, peak power-added efficiency (PAE) of 27.2 and 16.4%, output 1-dB compression power (OP1dB) of 13.9 and 11.4 dBm at 28 and 38 GHz, respectively.\",\"PeriodicalId\":283714,\"journal\":{\"name\":\"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT49453.2020.9226200\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT49453.2020.9226200","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种采用90纳米CMOS工艺的28/38 GHz双频f类功率放大器(PA)。本文提出的双频段f类输出匹配网络，通过控制两频段的谐波阻抗来满足f类工作的电压和电流波形，提高了两级PA的效率。该放大器在28 GHz和38 GHz频段的实测小信号增益分别为20.5和14.6 dB，饱和输出功率(Psat)分别为15.5和13.1 dBm，峰值功率增加效率(PAE)分别为27.2和16.4%，输出1dB压缩功率(OP1dB)分别为13.9和11.4 dBm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A Millimeter-Wave Dual-Band Class-F Power Amplifier in 90 nm CMOS

A 28/38 GHz dual-band class-F power amplifier (PA) using 90-nm CMOS process is proposed. The efficiency of the two-stage PA is enhanced by the proposed dual-band class-F output matching network, in which the harmonic impedance of both bands is controlled to fulfill the voltage and current waveform for class-F operation. The proposed PA achieves a measured small-signal gain of 20.5 and 14.6 dB, saturation output power (Psat) of 15.5 and 13.1 dBm, peak power-added efficiency (PAE) of 27.2 and 16.4%, output 1-dB compression power (OP1dB) of 13.9 and 11.4 dBm at 28 and 38 GHz, respectively.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

自引率

0.00%

发文量