Journal of Vacuum Science & Technology B最新文献_第7页

Investigation of silicon-on-insulator back-gate nano vacuum channel transistor array 硅绝缘体后栅纳米真空沟道晶体管阵列研究

Journal of Vacuum Science & Technology B Pub Date : 2024-02-02 DOI: 10.1116/6.0003346

Kaifang Weng, Changsheng Shen, Zhaofu Chen, Ningfeng Bai

{"title":"Investigation of silicon-on-insulator back-gate nano vacuum channel transistor array","authors":"Kaifang Weng, Changsheng Shen, Zhaofu Chen, Ningfeng Bai","doi":"10.1116/6.0003346","DOIUrl":"https://doi.org/10.1116/6.0003346","url":null,"abstract":"Recent advances in nanofabrication have made it possible to combine planar solid-state devices with vacuum electronics to create planar nano vacuum channel transistors that offer the advantages of cold-field emission and ballistic transmission. However, the current research is mainly limited to the study of a single field emission transistor, which has problems such as low current and poor gate control capability. To solve the above problems, a multitip field emission array is used in this work, and gate modulation is performed by a back-gate structure to fabricate and process a back-gate nano vacuum transistor array. First, we conducted simulation modeling of the back-gate nano vacuum transistor, investigated the impact of its structural parameters on its performance, and obtained the optimal simulation results. Then, structural parameters of the back-gate nano vacuum channel transistor array (BG-NVCTA) are selected based on the simulation results and fabricated by electron beam lithography on the silicon wafer. The experimental results, agreed well with the simulation results, show that the BG-NVCTA device has excellent gate control characteristics and a high current density. Its anode current is greater than 5 μA, and the transconductance is 1.05 μS when the anode voltage is 5 V.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"66 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139810326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of silicon-on-insulator back-gate nano vacuum channel transistor array 硅绝缘体后栅纳米真空沟道晶体管阵列研究

Journal of Vacuum Science & Technology B Pub Date : 2024-02-02 DOI: 10.1116/6.0003346

Kaifang Weng, Changsheng Shen, Zhaofu Chen, Ningfeng Bai

{"title":"Investigation of silicon-on-insulator back-gate nano vacuum channel transistor array","authors":"Kaifang Weng, Changsheng Shen, Zhaofu Chen, Ningfeng Bai","doi":"10.1116/6.0003346","DOIUrl":"https://doi.org/10.1116/6.0003346","url":null,"abstract":"Recent advances in nanofabrication have made it possible to combine planar solid-state devices with vacuum electronics to create planar nano vacuum channel transistors that offer the advantages of cold-field emission and ballistic transmission. However, the current research is mainly limited to the study of a single field emission transistor, which has problems such as low current and poor gate control capability. To solve the above problems, a multitip field emission array is used in this work, and gate modulation is performed by a back-gate structure to fabricate and process a back-gate nano vacuum transistor array. First, we conducted simulation modeling of the back-gate nano vacuum transistor, investigated the impact of its structural parameters on its performance, and obtained the optimal simulation results. Then, structural parameters of the back-gate nano vacuum channel transistor array (BG-NVCTA) are selected based on the simulation results and fabricated by electron beam lithography on the silicon wafer. The experimental results, agreed well with the simulation results, show that the BG-NVCTA device has excellent gate control characteristics and a high current density. Its anode current is greater than 5 μA, and the transconductance is 1.05 μS when the anode voltage is 5 V.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"28 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139870134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Strain-tuned optical properties of bilayer silicon at midinfrared wavelengths 双层硅在中红外波段的应变调谐光学特性

Journal of Vacuum Science & Technology B Pub Date : 2024-02-02 DOI: 10.1116/6.0003202

K. Vishal, Z. Ji, Y. Zhuang

{"title":"Strain-tuned optical properties of bilayer silicon at midinfrared wavelengths","authors":"K. Vishal, Z. Ji, Y. Zhuang","doi":"10.1116/6.0003202","DOIUrl":"https://doi.org/10.1116/6.0003202","url":null,"abstract":"Optical properties of two-dimensional bilayer silicon have been explored at midinfrared wavelengths using density functional theory. In this work, progressive atomic structural deformation and the resultant variations in the optical properties of the bilayer silicon films were investigated under external in-plane strain. A phase transformation of the atomic structure has been observed at an applied in-plane tensile strain of 5.17%, at which the atomic lattice is changed from a low buckled to a buckle-free honeycomb structure. Evaluations of the optical properties were carried out by taking into account the inter- and intraband transitions. An abrupt change in the optical refraction index was observed at the phase transition. In addition, the buckle-free honeycomb structure presents a strain-resistive absorption edge pinned at 1.14 μm wavelength. Exceeding a strain threshold of 12.26% results in the development of both direct- and indirect-energy bandgap openings. The direct bandgap induced interband optical transitions, resulting in absorption peaks at midinfrared wavelengths and a drastic increase in the refraction index. Moreover, by adjusting the strain, the optical absorptions can be tuned in a wide range of wavelength at midinfrared from 1.5 to 11.5 μm.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"54 14","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139869436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal analysis of implanter source head in radio-frequency inductively coupled plasma 射频电感耦合等离子体中植入器源头的热分析

Journal of Vacuum Science & Technology B Pub Date : 2024-01-30 DOI: 10.1116/6.0003060

Chang-Won Jeong, Choong-Mo Ryu, Hee-Lak Lee, Jong Jin Hwang, Seung Jae Moon

引用次数: 0

Treatment and aging studies of GaAs(111)B substrates for van der Waals chalcogenide film growth 范德瓦尔斯共卤化物薄膜生长所需的 GaAs(111)B 基底的处理和老化研究

Journal of Vacuum Science & Technology B Pub Date : 2024-01-18 DOI: 10.1116/6.0003470

Mingyu Yu, Jiayang Wang, Sahani A. Iddawela, Molly McDonough, Jessica L. Thompson, S. Sinnott, D. Reifsnyder Hickey, Stephanie Law

{"title":"Treatment and aging studies of GaAs(111)B substrates for van der Waals chalcogenide film growth","authors":"Mingyu Yu, Jiayang Wang, Sahani A. Iddawela, Molly McDonough, Jessica L. Thompson, S. Sinnott, D. Reifsnyder Hickey, Stephanie Law","doi":"10.1116/6.0003470","DOIUrl":"https://doi.org/10.1116/6.0003470","url":null,"abstract":"GaAs(111)B are commercially available substrates widely used for the growth of van der Waals chalcogenide films. Wafer-scale, high-quality crystalline films can be deposited on GaAs(111)B substrates using molecular beam epitaxy. However, two obstacles persist in the use of GaAs(111)B: first, the surface dangling bonds make it challenging for the growth of van der Waals materials; second, the As-terminated surface is prone to aging in air. This study investigated a thermal treatment method for deoxidizing GaAs(111)B substrates while simultaneously passivating the surface dangling bonds with Se. By optimizing the treatment parameters, we obtained a flat and completely deoxidized platform for subsequent film growth, with highly reproducible operations. Furthermore, through first-principle calculations, we find that the most energetically favorable surface of GaAs(111)B after Se passivation consists of 25% As atoms and 75% Se atoms. Finally, we discovered that the common storage method using food-grade vacuum packaging cannot completely prevent substrate aging, and even after thermal treatment, aging still affects subsequent growth. Therefore, we recommend using N2-purged containers for better preservation.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"94 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140503797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Degradation of GaN field emitter arrays induced by O2 exposure 氮化镓场发射器阵列因暴露于 O2 而降解

Journal of Vacuum Science & Technology B Pub Date : 2024-01-01 DOI: 10.1116/6.0003314

Reza Farsad Asadi, T. Zheng, Pao-Chuan Shih, Tomás Palacios, A. Akinwande, B. Gnade

{"title":"Degradation of GaN field emitter arrays induced by O2 exposure","authors":"Reza Farsad Asadi, T. Zheng, Pao-Chuan Shih, Tomás Palacios, A. Akinwande, B. Gnade","doi":"10.1116/6.0003314","DOIUrl":"https://doi.org/10.1116/6.0003314","url":null,"abstract":"Field emitter arrays (FEAs) have the potential to operate at high frequencies and in harsh environments. However, they have been shown to degrade under oxidizing environments. Studying the effect of O2 on FEAs can help to understand the degradation mechanisms, identify the requirements for vacuum packaging, and estimate the lifetime of the device. In this work, the effect of O2 exposure on 100 × 100 gallium-nitride-field emitter arrays (GaN-FEAs) was studied. The GaN-FEAs were operated at 6 × 10−10 Torr with a 1000 V DC anode voltage and a 50 V DC gate voltage, where the anode current was 1 μA and the gate current was ≤4 nA. The devices were exposed to 10−7, 10−6, and 10−5 Torr of O2 for 100 000 L. The anode current dropped by 50% after 300 L and 98% after 100 000 L. It was observed that the degradation depends on the exposure dose, rather than pressure. The devices mostly degrade when they are ON, confirmed by exposing the device to O2 when the gate voltage was off, and also by the relation between the degradation and duty cycle when pulsing the gate. The results of O2 exposure were compared to Ar exposure to determine whether sputtering and changes in the surface geometry were the primary cause of degradation. The results suggest that changes in the work function and surface chemistry are the cause of emission degradation of GaN-FEA induced by O2.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"10 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139633517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nanoimprint lithography guiding templates for advanced magnetic media fabrication 用于先进磁介质制造的纳米压印光刻引导模板

Journal of Vacuum Science & Technology B Pub Date : 2024-01-01 DOI: 10.1116/6.0003210

D. Staaks, Y. Hsu, Kim Y. Lee, Philip L. Steiner, Zhaoning Yu, Jason J. Wu, S. Xiao, XiaoMin Yang, Thomas Y. Chang

{"title":"Nanoimprint lithography guiding templates for advanced magnetic media fabrication","authors":"D. Staaks, Y. Hsu, Kim Y. Lee, Philip L. Steiner, Zhaoning Yu, Jason J. Wu, S. Xiao, XiaoMin Yang, Thomas Y. Chang","doi":"10.1116/6.0003210","DOIUrl":"https://doi.org/10.1116/6.0003210","url":null,"abstract":"Nanoimprint lithography presents unique opportunities for advanced magnetic storage media with ordered bit arrangements such as bit patterned media or heated dot magnetic recording. Providing sub-10 nm resolution and full disk imprinting capability, UV-nanoimprint lithography based on rigid quartz templates bears the entitlement for patterned recording media manufacturing with high throughput at low cost. However, a key challenge is the fabrication of the high-resolution template that can transfer the desired pattern onto the disk with high fidelity and low line edge roughness. In this article, we present fabrication routes and overcome challenges to the fabrication of quartz templates suitable for self-alignment and guiding purposes to be used for template replication toward full disk imprints. Guiding patterns down to 40 nm pitch are prepared using a rotary electron beam lithography tool. We compare three different process approaches to fabricate an etching mask for patterning the quartz. Two methods target chromium patterning, one with traditional lift-off and another by dry etching, both using an e-beam resist mask. The third approach is based on the development of a carbon-based Tri-layer hard mask. The template pattern profile is optimized for imprint-suitable sidewall angles using dry etching in a CF4/O2 chemistry. The templates were characterized using scanning electron microscopy and atomic force microscopy to evaluate the quality of the transferred pattern as well as line edge roughness. Our results show that the Tri-layer process using carbon resulted in the lowest line edge roughness of ≈0.65 nm at the imprinted disk level. In addition, we show that Tri-layer masking allowed for the use of conventional ZEP e-beam resist and fast writing speeds, while gaining high selectivity during quartz patterning.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"30 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139633050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Integrated multichip field emission electron source fabricated by laser-micromachining and MEMS technology 利用激光微机械加工和微机电系统技术制造的集成多芯片场发射电子源

Journal of Vacuum Science & Technology B Pub Date : 2024-01-01 DOI: 10.1116/6.0003233

M. Hausladen, P. Buchner, M. Bartl, M. Bachmann, R. Schreiner

{"title":"Integrated multichip field emission electron source fabricated by laser-micromachining and MEMS technology","authors":"M. Hausladen, P. Buchner, M. Bartl, M. Bachmann, R. Schreiner","doi":"10.1116/6.0003233","DOIUrl":"https://doi.org/10.1116/6.0003233","url":null,"abstract":"In this work, high-current field emission electron source chips were fabricated using laser-micromachining and MEMS technology. The resulting chips were combined with commercially available printed circuit boards (PCBs) to obtain a multichip electron source. By controlling the separate electron sources using an external current control circuit, we were able to divide the desired total current evenly across the individual chips deployed in the PCB-carrier. In consequence, we were able to show a decreased degradation due to the reduced current load per chip. First, a single electron source chip was measured without current regulation. A steady-state emission current of 1 mA with a high stability of ±1.3% at an extraction voltage of 250 V was observed. At this current level, a mean degradation slope of −0.7 μA/min with a nearly perfect transmission ratio of 99% ± 0.4% was determined. The measurements of a fully assembled multichip PCB-carrier electron source, using a current control circuit for regulation, showed that an even distribution of the desired total current led to a decreased degradation. This was determined by the increase in the required extraction voltage over time. For this purpose, two current levels were applied to the electron source chips of the PCB-carrier using an external current control circuit. First, 300 μA total current was evenly distributed among the individual electron source chips followed by the emission of 300 μA per electron source chip. This allows the observation of the influence of a distributed and nondistributed total current, carried by the electron source chips. Thereby, we obtained an increase in the mean degradation slope from +0.011 V/min (300 μA distributed) to +0.239 V/min (300 μA per chip), which is approximately 21 times higher. Moreover, our current control circuit improved the current stability to under 0.1% for both current levels, 300 μA distributed and 300 μA per chip.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"322 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139395175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Room-temperature nanostructured PbSe/CdSe mid-infrared photodetector: Annealing effects 室温纳米结构 PbSe/CdSe 中红外光探测器：退火效应

Journal of Vacuum Science & Technology B Pub Date : 2024-01-01 DOI: 10.1116/6.0003193

Milad Rastkar Mirzaei, Zhisheng Shi

引用次数: 0

Growth of CdS heterojunctions on Cd0.9Zn0.1Te single crystals with H2S 用 H2S 在 Cd0.9Zn0.1Te 单晶上生长 CdS 异质结

Journal of Vacuum Science & Technology B Pub Date : 2024-01-01 DOI: 10.1116/6.0003265

Hao Yuan, T. Tiedje, Jingye Chen, Hui Wang, Brad Aitchison, Pawan Kumar, Yuxin Song

引用次数: 0

Journal of Vacuum Science &amp; Technology B最新文献

Journal of Vacuum Science & Technology B最新文献