用 H2S 在 Cd0.9Zn0.1Te 单晶上生长 CdS 异质结

Hao Yuan, T. Tiedje, Jingye Chen, Hui Wang, Brad Aitchison, Pawan Kumar, Yuxin Song
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引用次数: 0

摘要

抛光的 Cd0.9Zn0.1Te (CZT) 单晶在 200 至 280 °C 的温度下暴露于氮气中的稀 H2S,以便在表面生成硫化物层。通过光发射、X 射线吸收、截面扫描电镜和光谱椭偏仪研究了 H2S 暴露前后 CZT 表面的组成。在最高温度下,H2S 暴露会去除表面氧化物并耗尽 Te,留下 CdS 表面层。在 280 °C、接触 H2S 2 小时后,生长出厚度为 60 nm 的 CdS 层。与无意氧化的表面相比,因暴露于臭氧而初步氧化的表面对 H2S 的反应更强。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growth of CdS heterojunctions on Cd0.9Zn0.1Te single crystals with H2S
Polished Cd0.9Zn0.1Te (CZT) single crystals have been exposed to dilute H2S in nitrogen at temperatures from 200 to 280 °C in order to produce a sulfide layer on the surface. The composition of the CZT surfaces before and after H2S exposure has been investigated by photoemission, x-ray absorption, cross-sectional SEM, and spectroscopic ellipsometry. At the highest temperature, H2S exposure removes surface oxides and depletes Te, leaving a CdS surface layer. CdS layers 60 nm thick have been grown with a 2 h exposure to H2S at 280 °C. Surfaces that are initially oxidized through ozone exposure are much more reactive with H2S than unintentionally oxidized surfaces.
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