用于先进磁介质制造的纳米压印光刻引导模板

D. Staaks, Y. Hsu, Kim Y. Lee, Philip L. Steiner, Zhaoning Yu, Jason J. Wu, S. Xiao, XiaoMin Yang, Thomas Y. Chang
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摘要

纳米压印光刻技术为具有有序位排列的先进磁性存储介质(如位图案介质或加热点磁记录)提供了独特的机遇。基于硬质石英模板的紫外纳米压印光刻技术具有 10 纳米以下的分辨率和全盘压印能力,可实现低成本、高产能的图案化记录媒体制造。然而,一个关键的挑战是如何制造高分辨率模板,以高保真和低线边粗糙度将所需图案转移到磁盘上。在本文中,我们介绍了制作石英模板的方法,并克服了制作适用于自对准和导向的石英模板所面临的挑战,该模板可用于模板复制,以实现全盘印记。我们使用旋转电子束光刻工具制备了间距小至 40 nm 的导向图案。我们比较了三种不同的工艺方法,以制作用于石英图案化的蚀刻掩模。其中两种方法以铬图案化为目标,一种是传统的掀离法,另一种是干蚀刻法,均使用电子束抗蚀掩模。第三种方法基于碳基三层硬掩模的开发。通过在 CF4/O2 化学物质中进行干法蚀刻,对模板图案轮廓进行了优化,以获得适合压印的侧壁角度。使用扫描电子显微镜和原子力显微镜对模板进行了表征,以评估转移图案的质量以及线边缘的粗糙度。我们的结果表明,使用碳的三层工艺在压印盘层面上的线边缘粗糙度最低,仅为 ≈0.65 nm。此外,我们还发现,三层掩膜允许使用传统的 ZEP 电子束抗蚀剂和快速写入速度,同时在石英图案化过程中获得高选择性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nanoimprint lithography guiding templates for advanced magnetic media fabrication
Nanoimprint lithography presents unique opportunities for advanced magnetic storage media with ordered bit arrangements such as bit patterned media or heated dot magnetic recording. Providing sub-10 nm resolution and full disk imprinting capability, UV-nanoimprint lithography based on rigid quartz templates bears the entitlement for patterned recording media manufacturing with high throughput at low cost. However, a key challenge is the fabrication of the high-resolution template that can transfer the desired pattern onto the disk with high fidelity and low line edge roughness. In this article, we present fabrication routes and overcome challenges to the fabrication of quartz templates suitable for self-alignment and guiding purposes to be used for template replication toward full disk imprints. Guiding patterns down to 40 nm pitch are prepared using a rotary electron beam lithography tool. We compare three different process approaches to fabricate an etching mask for patterning the quartz. Two methods target chromium patterning, one with traditional lift-off and another by dry etching, both using an e-beam resist mask. The third approach is based on the development of a carbon-based Tri-layer hard mask. The template pattern profile is optimized for imprint-suitable sidewall angles using dry etching in a CF4/O2 chemistry. The templates were characterized using scanning electron microscopy and atomic force microscopy to evaluate the quality of the transferred pattern as well as line edge roughness. Our results show that the Tri-layer process using carbon resulted in the lowest line edge roughness of ≈0.65 nm at the imprinted disk level. In addition, we show that Tri-layer masking allowed for the use of conventional ZEP e-beam resist and fast writing speeds, while gaining high selectivity during quartz patterning.
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