双层硅在中红外波段的应变调谐光学特性

K. Vishal, Z. Ji, Y. Zhuang
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引用次数: 0

摘要

利用密度泛函理论探索了二维双层硅在中红外波段的光学特性。在这项工作中,研究了双层硅薄膜在外部面内应变下的渐进原子结构形变以及由此产生的光学特性变化。在施加 5.17% 的面内拉伸应变时,观察到原子结构发生了相变,原子晶格从低扣蜂窝结构变为无扣蜂窝结构。通过考虑带间和带内转变,对光学特性进行了评估。在相变过程中,光学折射率发生了突变。此外,无扣蜂窝结构在 1.14 μm 波长处出现了应变电阻吸收边缘。当应变阈值超过 12.26% 时,会出现直接能带隙和间接能带隙开口。直接带隙诱导带间光学跃迁,导致中红外波长出现吸收峰,折射率急剧上升。此外,通过调整应变,还可以在 1.5 至 11.5 μm 的中红外波长范围内调整光学吸收。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Strain-tuned optical properties of bilayer silicon at midinfrared wavelengths
Optical properties of two-dimensional bilayer silicon have been explored at midinfrared wavelengths using density functional theory. In this work, progressive atomic structural deformation and the resultant variations in the optical properties of the bilayer silicon films were investigated under external in-plane strain. A phase transformation of the atomic structure has been observed at an applied in-plane tensile strain of 5.17%, at which the atomic lattice is changed from a low buckled to a buckle-free honeycomb structure. Evaluations of the optical properties were carried out by taking into account the inter- and intraband transitions. An abrupt change in the optical refraction index was observed at the phase transition. In addition, the buckle-free honeycomb structure presents a strain-resistive absorption edge pinned at 1.14 μm wavelength. Exceeding a strain threshold of 12.26% results in the development of both direct- and indirect-energy bandgap openings. The direct bandgap induced interband optical transitions, resulting in absorption peaks at midinfrared wavelengths and a drastic increase in the refraction index. Moreover, by adjusting the strain, the optical absorptions can be tuned in a wide range of wavelength at midinfrared from 1.5 to 11.5 μm.
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